搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

脉冲偏压电弧离子镀Cr-O薄膜结构及光学性能研究

刘海永 张敏 林国强 韩克昌 张林

引用本文:
Citation:

脉冲偏压电弧离子镀Cr-O薄膜结构及光学性能研究

刘海永, 张敏, 林国强, 韩克昌, 张林

Structure and optical property of Cr-O films deposited by pulsed bias arc ion plating

Liu Hai-Yong, Zhang Min, Lin Guo-Qiang, Han Ke-Chang, Zhang Lin
PDF
导出引用
  • 采用脉冲偏压电弧离子镀技术在单晶硅基片及石英玻璃上制备了一系列均匀透明的Cr-O薄膜. 用场发射扫描电子显微镜、X射线衍射仪、X射线光电子谱、纳米压痕仪、紫外可见光分光光度计等方法对薄膜的表面形貌、膜厚、相结构、成分、元素的化学价态、硬度和光学性能等进行表征, 主要研究了偏压幅值对薄膜结构和性能的影响. 结果表明, 施加偏压可使薄膜的沉积质量明显提高, 其相结构由非晶态转变为晶体态, 并随着偏压幅值的增加, 由Cr2O3相向CrO相转变; 薄膜的硬度先增大后减小, 当偏压为-300 V时, 硬度达到最大值24.4 GPa; 薄膜具有良好的透光率, 最高可达72%; 当偏压为-200 V时, 薄膜的最大光学帯隙为1.88 eV.
    A series of uniform and transparent Cr-O films were synthesized on the silicon and quartz glass substrates at different bias voltages by pulsed bias arc ion plating. Effects of bias voltage on surface morphology, phase structure, composition, chemical valence states, hardness and optical property of the films were investigated by field emission scanning electron microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, nanoindentation and ultraviolet-visible spectrophotometer, respectively. Results indicate that the bias voltage can improve the quality of the films significantly and plays an important role in the film properties. Macroparticles and holes are observed on the surface of the films if without application of bias voltage, while the films prepared with bias voltage are uniform and smooth. The crystalline phase of the film is of amorphous structure if without bias voltage. While the bias voltage applies and increases from -100 V to -500 V, the Cr2O3 phase appears and changes into CrO phase. The crystal plane (104), (116) of the Cr2O3 phase and (200) of the Cr phase are observed in the film at the bias voltage of -100 V. When the bias voltage is above -200 V, the crystal planes (311) and (400) of the CrO phase can be observed. In order to further obtain the structure information, a detailed XPS study is performed. Chromium in the films shows different valence states, namely metallic Cr, Cr2+, Cr3+ and Cr6+. Thereby, the main components of the polycrystalline films are Cr2O3 and CrO phases, meanwhile, and the films also contain a small amount of CrO3 and metal Cr phases. The films under different bias voltage show good mechanical properties and the hardness of all the films is above 19 GPa. With the increase of bias voltage the hardness first increases and then decreases, reaching a maximum value of 24.4 GPa at the bias voltage of -300 V. The films show good optical transmittance and its highest value can be up to 72%. As the bias voltage rises, it is observed first the red shift and then blue shift of the absorption edge. And the optical band gap reaches the maximum value of 1.88 eV when the bias voltage is -200 V. Therefore, Cr-O functional films can be synthesized by pulsed bias arc ion plating and the phase structure and properties can be effectively adjusted.
    • 基金项目: 国家自然科学基金(批准号:51271047,51101080)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51271047, 51101080).
    [1]

    Khojier K, Savaloni H, Ashkabusi Z, Dehnavi NZ 2013 Appl. Surf. Sci. 284 489

    [2]

    Wang T G, Liu Y, Sina H, Shi C, Iyengar S, Melin S, Kim K H 2013 Surf. Coat. Tech. 228 140

    [3]

    Ji A L, Wang W, Song G H, Wang A Y, Sun C, Wen L S 2003 Acta Metall. Sin. 09 979 (in Chinese) [纪爱玲, 汪伟, 宋贵宏, 汪爱英, 孙超, 闻立时 2003 金属学报 09 979]

    [4]

    Wang B W, Shen H 2005 Acta Energi. Sin. 01 56 (in Chinese) [汪保卫, 沈辉 2005 太阳能学报 01 56]

    [5]

    Yang W, Chen K, Zheng S X, Guo S J 1999 Laser J. 06 14 (in Chinese) [羊旺, 陈凯, 郑顺镟, 郭斯淦 1999 激光杂志 06 14]

    [6]

    Zhang L, Ma G J, Lin G Q, Ma H, Han K C 2014 Chin. Phys. B 23 620

    [7]

    Zhang M, Lin G Q, Dong C, Wen L S 2007 Acta Phys. Sin. 56 7300 (in Chinese) [张敏, 林国强, 董闯, 闻立时 2007 56 7300]

    [8]

    Lin G Q, Zhao Y H, Guo H M, Wang D Z, Dong C 2004 J. Vac. Sci. Technol. A 22 1218

    [9]

    Wang T G, Jeong D, Kim S H, Wang Q, Shin D W, Melin S, Iyengar S, Kim K H 2012 Surf. Coat. Tech. 206 2629

    [10]

    Liu B, Nakatani H, Terano M 2002 J. Mol. Catal. A: Chem. 184 387

    [11]

    Maurice V, Cadot S, Marcus P 2000 Surf. Sci. 458 195

    [12]

    Benito N, Díaz D, Vergara L, Galindo R E, Sánchez O, Palacio C 2011 Surf. Coat. Tech. 206 1484

    [13]

    Oliver W C, Pharr G M 1992 J. Mater. Res. 7 1564

    [14]

    Zeng L G, Liu F M, Zhong W W, Ding P, Cai L G, Zhou C C 2011 Acta Phys. Sin. 60 038203 (in Chinese) [曾乐贵, 刘发民, 钟文武, 丁芃, 蔡鲁刚, 周船仓 2011 60 038203]

  • [1]

    Khojier K, Savaloni H, Ashkabusi Z, Dehnavi NZ 2013 Appl. Surf. Sci. 284 489

    [2]

    Wang T G, Liu Y, Sina H, Shi C, Iyengar S, Melin S, Kim K H 2013 Surf. Coat. Tech. 228 140

    [3]

    Ji A L, Wang W, Song G H, Wang A Y, Sun C, Wen L S 2003 Acta Metall. Sin. 09 979 (in Chinese) [纪爱玲, 汪伟, 宋贵宏, 汪爱英, 孙超, 闻立时 2003 金属学报 09 979]

    [4]

    Wang B W, Shen H 2005 Acta Energi. Sin. 01 56 (in Chinese) [汪保卫, 沈辉 2005 太阳能学报 01 56]

    [5]

    Yang W, Chen K, Zheng S X, Guo S J 1999 Laser J. 06 14 (in Chinese) [羊旺, 陈凯, 郑顺镟, 郭斯淦 1999 激光杂志 06 14]

    [6]

    Zhang L, Ma G J, Lin G Q, Ma H, Han K C 2014 Chin. Phys. B 23 620

    [7]

    Zhang M, Lin G Q, Dong C, Wen L S 2007 Acta Phys. Sin. 56 7300 (in Chinese) [张敏, 林国强, 董闯, 闻立时 2007 56 7300]

    [8]

    Lin G Q, Zhao Y H, Guo H M, Wang D Z, Dong C 2004 J. Vac. Sci. Technol. A 22 1218

    [9]

    Wang T G, Jeong D, Kim S H, Wang Q, Shin D W, Melin S, Iyengar S, Kim K H 2012 Surf. Coat. Tech. 206 2629

    [10]

    Liu B, Nakatani H, Terano M 2002 J. Mol. Catal. A: Chem. 184 387

    [11]

    Maurice V, Cadot S, Marcus P 2000 Surf. Sci. 458 195

    [12]

    Benito N, Díaz D, Vergara L, Galindo R E, Sánchez O, Palacio C 2011 Surf. Coat. Tech. 206 1484

    [13]

    Oliver W C, Pharr G M 1992 J. Mater. Res. 7 1564

    [14]

    Zeng L G, Liu F M, Zhong W W, Ding P, Cai L G, Zhou C C 2011 Acta Phys. Sin. 60 038203 (in Chinese) [曾乐贵, 刘发民, 钟文武, 丁芃, 蔡鲁刚, 周船仓 2011 60 038203]

  • [1] 吕行, 富容国, 常本康, 郭欣, 王芝. 透射式GaAs光电阴极性能提高以及结构优化.  , 2024, 73(3): 037801. doi: 10.7498/aps.73.20231542
    [2] 龚凌云, 张萍, 陈倩, 楼志豪, 许杰, 高峰. Nb5+掺杂钛酸锶结构与性能的第一性原理研究.  , 2021, 70(22): 227101. doi: 10.7498/aps.70.20211241
    [3] 蒋泵, 陈思良, 崔晓磊, 胡紫婷, 李跃, 张笑铮, 吴康敬, 王文贞, 蒋最敏, 洪峰, 马忠权, 赵磊, 徐飞, 徐闰, 詹义强. 混合型碘系钙钛矿薄膜变温光致发光特性的研究.  , 2019, 68(24): 246801. doi: 10.7498/aps.68.20191238
    [4] 姜艳, 刘贵立. 剪切形变对硼氮掺杂碳纳米管超晶格电子结构和光学性能的影响.  , 2015, 64(14): 147304. doi: 10.7498/aps.64.147304
    [5] 沈杰, 魏宾, 周静, Shen Shirley Zhiqi, 薛广杰, 刘韩星, 陈文. Ba(Mg1/3Nb2/3)O3电子结构第一性原理计算及光学性能研究.  , 2015, 64(21): 217801. doi: 10.7498/aps.64.217801
    [6] 黄小林, 侯丽珍, 喻博闻, 陈国良, 王世良, 马亮, 刘新利, 贺跃辉. Cu/C核/壳纳米结构的气相合成、形成机理及其光学性能研究.  , 2013, 62(10): 108102. doi: 10.7498/aps.62.108102
    [7] 贾晓琴, 何智兵, 牛忠彩, 何小珊, 韦建军, 李蕊, 杜凯. 热处理对制备辉光放电聚合物薄膜结构及光学性能的影响.  , 2013, 62(5): 056804. doi: 10.7498/aps.62.056804
    [8] 章瑞铄, 刘涌, 滕繁, 宋晨路, 韩高荣. 锐钛矿相和金红石相TiO2:Nb的光电性能研究.  , 2012, 61(1): 017101. doi: 10.7498/aps.61.017101
    [9] 管东波, 毛健. Magnli相亚氧化钛Ti8O15的电子结构和光学性能的第一性原理研究.  , 2012, 61(1): 017102. doi: 10.7498/aps.61.017102
    [10] 赵静, 张益军, 常本康, 熊雅娟, 张俊举, 石峰, 程宏昌, 崔东旭. 高性能透射式GaAs光电阴极量子效率拟合与结构研究.  , 2011, 60(10): 107802. doi: 10.7498/aps.60.107802
    [11] 彭静, 徐智谋, 王双保, 董泽华. 非晶钛酸锶钡薄膜的金属有机分解法制备及其光学性能.  , 2011, 60(5): 057702. doi: 10.7498/aps.60.057702
    [12] 张丽娟, 胡慧芳, 王志勇, 魏燕, 贾金凤. 硼掺杂单壁碳纳米管吸附甲醛的电子结构和光学性能研究.  , 2010, 59(1): 527-531. doi: 10.7498/aps.59.527
    [13] 李红凯, 林国强, 董闯. 脉冲偏压电弧离子镀C-N-V薄膜的成分、结构与性能.  , 2010, 59(6): 4296-4302. doi: 10.7498/aps.59.4296
    [14] 李红凯, 林国强, 董 闯. 脉冲偏压电弧离子镀CNx薄膜研究.  , 2008, 57(10): 6636-6642. doi: 10.7498/aps.57.6636
    [15] 谷建峰, 付伟佳, 刘 明, 刘志文, 马春雨, 张庆瑜. 电化学沉积高c轴取向ZnO薄膜及其光学性能分析.  , 2007, 56(10): 5979-5985. doi: 10.7498/aps.56.5979
    [16] 刘爱云, 孟祥建, 薛建强, 孙璟兰, 马建华, 汪 琳, 褚君浩. 化学溶液法制备的Pb(Mg1/3Nb2/3)O3-PbTiO3薄膜的光学性能.  , 2006, 55(6): 3128-3131. doi: 10.7498/aps.55.3128
    [17] 徐锦锋, 魏炳波. 快速凝固Co-Cu包晶合金的电学性能.  , 2005, 54(7): 3444-3450. doi: 10.7498/aps.54.3444
    [18] 沈 健, 刘守华, 沈自才, 孔伟金, 黄建兵, 邵建达, 范正修. 基底微缺陷对介质薄膜光学性能影响的理论研究.  , 2005, 54(10): 4920-4925. doi: 10.7498/aps.54.4920
    [19] 陈镇平, 薛运才, 苏玉玲, 宫世成, 张金仓. Gd替代YBa2Cu3O7-δ超导体的相结构与局域电子结构的研究.  , 2005, 54(11): 5382-5388. doi: 10.7498/aps.54.5382
    [20] 陈岁元, 刘常升, 傅贵勤, 王章涛, 才庆魁. 高硼钢中B与Fe作用的超精细结构研究.  , 2002, 51(8): 1711-1715. doi: 10.7498/aps.51.1711
计量
  • 文章访问数:  6268
  • PDF下载量:  165
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-10-14
  • 修回日期:  2015-02-10
  • 刊出日期:  2015-07-05

/

返回文章
返回
Baidu
map