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脉冲偏压电弧离子镀C-N-V薄膜的成分、结构与性能

李红凯 林国强 董闯

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脉冲偏压电弧离子镀C-N-V薄膜的成分、结构与性能

李红凯, 林国强, 董闯

Composition, microstructure and properties of C-N-V films prepared by pulsed bias arc ion plating

Li Hong-Kai, Lin Guo-Qiang, Dong Chuang
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  • 用脉冲偏压电弧离子镀方法在硬质合金基体上制备了一系列不同成分的C-N-V薄膜.用X射线光电子能谱、激光Raman光谱、 X射线衍射(XRD)、透射电子显微镜(TEM)和纳米压痕等方法分别研究了薄膜的成分、结构与性能.Raman光谱,XRD和TEM结果表明,所制备的薄膜为在类金刚石(DLC)非晶基体上匹配有VN晶体的碳基复合薄膜.随V和N含量的增加,薄膜硬度与弹性模量先增加后下降,在N含量为204%,V含量为218%时薄膜硬度与弹性模量具有最大值,分别为368和5697 GPa,高于相同条件下制备的
    High quality C-N-V films with different compositions were prepared on cemented carbide substrate using pulsed bias arc ion plating. The surface morphology, composition, microstructure and properties of C-N-V films were investigated by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectra, grazing incident X-ray diffraction, and nano-indentation, respectively. The results show that the deposited films were nanocomposite films with VN nanocrystalline phase imbedded within diamond-like carbon(DLC) amorphous matrix. The hardness and elastic modulus, which are closely related to the composition and structure of the film, first increase and then decrease with increasing V and N contents and have the highest values of 368 and 5697 GPa exceeding that of pure DLC film prepared under the same condition when nitrogen content is 204% and vanadium content is 218%. The variation of V and N contents has significant influence on the phase structure, relative concentration of VN crystalline phase and DLC amorphous phase, and induces the formation of nano-diamond phase, hence has great effect on the properties of the films.
    • 基金项目: 国家高技术研究发展计划(批准号:2006AA03Z521)资助的课题.
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  • [1]

    [1]Hainsworth S V, Uhure N J 2007 Int. Mater. Rev. 52 153

    [2]

    [2]Robertson J 2002 Mater. Sci. Eng. R 37 129

    [3]

    [3]Li H X, Xu T, Chen J M, Zhou H D, Liu H W 2005 Acta Phys. Sin. 54 1885 (in Chinese) [李红轩、徐洮、陈建敏、周惠娣、刘惠文 2005 54 1885]

    [4]

    [4]Ju J H, Xia Y B, Zhang W L, Wang L J, Shi W M, Huang Z M, Li Z F, Zheng G Z, Tang D Y 2000 Acta Phys. Sin. 49 2310 (in Chinese) [居建华、夏义本、张伟丽、王林军、史为民、黄志明、李志锋、郑国珍、汤定元 2000 49 2310]

    [5]

    [5]Tan M L, Zhu J Q, Han J C, Gao W, Liu A P, Han X 2008 Mater. Res. Bull. 43 453

    [6]

    [6]Zhao D C, Ren N, Ma Z J, Qiu J W, Xiao G J, Wu S H 2008 Acta Phys. Sin. 57 1935 (in Chinese) [赵栋才、任妮、马占吉、邱家稳、肖更竭、武生虎 2008 57 1935]

    [7]

    [7]Singh V, Jiang J C, Meletis E I 2005 Thin Solid Films 489 150

    [8]

    [8]Ma G J, Liu X L, Zhang H F, Wu H C, Peng L P, Jiang Y L2007 Acta Phys. Sin. 56 2377 (in Chinese) [马国佳、刘喜亮、张华芳、武洪臣、彭丽平、蒋艳莉 2007 56 2377]

    [9]

    [9]Zhang Z Y, Lu X C, Luo J B, Shao T M, Qing T, Zhang C H 2006 Chin. Phys. 15 2697

    [10]

    ]Inkin V N, Kirpilenko G G, Dementjev A A, Maslakov K I 2000 Diam. Relat. Mater. 9 715

    [11]

    ]Byon E, Kim J K, Rha J J, Kwon S C, Mu Z X, Liu C, Li G Q 2007 Surf. Coat. Technol. 201 6670

    [12]

    ]Chen C C, Hong F C N 2005 Appl. Surf. Sci. 242 261

    [13]

    ]Veprek S, Reiprich S 1995 Thin Solid Films 268 64

    [14]

    ]Musil J 2000 Surf. Coat. Technol. 125 322

    [15]

    ]Pal S K, Jiang J C, Meletis E I 2007 Surf. Coat. Technol. 201 7917

    [16]

    ]Xu P, Li J J, Wang Q, Wang Z L, Gu C Z, Cui Z 2007 J. Appl. Phys. 101 014312

    [17]

    ]Glaser A, Surnev S, Netzer F P, Fateh N, Fontalvo G A, Mitterer C 2007 Surf. Sci. 601 1153

    [18]

    ]Zhao Z W, Liu Y, Cao H, Ye J W, Gao S J, Tu M J 2008 J. Alloys Compd. 464 75

    [19]

    ]Delpeux S, Beguin F, Benoit R, Erre R, Manolova N, Rashkov I 1998 Eur. Polym. J. 34 905

    [20]

    ]Yang W B, Fan S H, Zhang G L, Ma P N, Zhang S Z, Du J 2005 Acta Phys. Sin. 54 4944 (in Chinese) [杨武保、范松华、张谷令、马培宁、张守忠、杜健 2005 54 4944]

    [21]

    ]Ferrari A C 2002 Diam. Relat. Mater. 11 1053

    [22]

    ]Xu F, Zuo D W, Lu W Z, Zhang H Y, Wang M 2008 Acta Metall. Sin. 44 74 (in Chinese) [徐锋、左敦稳、卢文壮、张海余、王珉 2008 金属学报 44 74]

    [23]

    ]Nemanich R J 1991 Annu. Rev. Mater. Sci. 21 535

    [24]

    ]Veprek S 1999 J. Vac. Sci. Technol. A 17 2401

    [25]

    ]Tay B K, Cheng Y H, Ding X Z, Lau S P, Shi X, You G F, Sheeja D 2001 Diam. Relat. Mater. 10 1082

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出版历程
  • 收稿日期:  2009-09-07
  • 修回日期:  2010-01-11
  • 刊出日期:  2010-03-05

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