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The capacitance model is fundamental for the transient analysis, AC analysis and noise analysis of uniaxially strained Si MOSFET device and circuit. Firstly, the 16-differential capacitance model for uniaxially strained Si NMOSFET is developed. Secondly, the simulation results from that model match the experimental results well, which validates the accuracy of the model. Meanwhile the simulated relations of key gate capacitance Cgg to stress intensity, bias voltage，channel length and concentration of poly gate are obtained and analyzed, showing that the value of Cgg is a little larger than that of strainless bulk device while the changing tendency keeps the same.
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Keywords:
- uniaxially strained Si /
- differential capacitance /
- gate capacitance
[1] Nicoleta W, Harald R, Mahadi-ul H 2011 Solid-State Electron. 57 60
[2] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[3] Hung M F, Wu Y C, Tang Z Y 2011 Appl. Phys. Lett. 98 162108
[4] Irisawa T, Numata T, Tezuka T, Usuda K, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 649
[5] Wu H Y, Zhang H M, Song J J, Hu H Y 2011 Acta Phys. Sin. 60 097302 (in Chinese) [吴华英, 张鹤鸣, 宋建军, 胡辉勇 2011 60 097302]
[6] Kuang Q W, Liu H X, Wang S L, Qin S S, Wang Z L 2011 Chin. Phys. B 20 127101
[7] Kang T K 2012 IEEE Electron Dev. Lett. 33 770
[8] Wang B, Zhang H M, Hu H Y, Shu B, Zhang Y M, Song J J 2013 Jpn. J. Appl. Phys. 52 064201
[9] Kelaidis N, Skarlatos D, Tsamis C 2008 Phys. Stat. Sol. C 5 3647
[10] Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, L Y, Wang B, Wang G Y 2014 Acta Phys. Sin. 63 017101 (in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 王冠宇 2014 63 017101]
[11] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid-State Electron. 50 109
[12] Wang B, Zhang H M, Hu H Y, Zhang Y M, Song J J, Zhou C Y, Li H C 2013 Acta Phys. Sin. 62 127102 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 宋建军, 周春宇, 李好晨 2013 62 127102]
[13] Zhang W, Fossum J G 2005 IEEE Trans. Electron Dev. 52 263
[14] Bindu B, DasGupta N, DasGupta A 2007 IEEE Trans. Electron Dev. 54 1889
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[1] Nicoleta W, Harald R, Mahadi-ul H 2011 Solid-State Electron. 57 60
[2] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[3] Hung M F, Wu Y C, Tang Z Y 2011 Appl. Phys. Lett. 98 162108
[4] Irisawa T, Numata T, Tezuka T, Usuda K, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 649
[5] Wu H Y, Zhang H M, Song J J, Hu H Y 2011 Acta Phys. Sin. 60 097302 (in Chinese) [吴华英, 张鹤鸣, 宋建军, 胡辉勇 2011 60 097302]
[6] Kuang Q W, Liu H X, Wang S L, Qin S S, Wang Z L 2011 Chin. Phys. B 20 127101
[7] Kang T K 2012 IEEE Electron Dev. Lett. 33 770
[8] Wang B, Zhang H M, Hu H Y, Shu B, Zhang Y M, Song J J 2013 Jpn. J. Appl. Phys. 52 064201
[9] Kelaidis N, Skarlatos D, Tsamis C 2008 Phys. Stat. Sol. C 5 3647
[10] Zhou C Y, Zhang H M, Hu H Y, Zhuang Y Q, L Y, Wang B, Wang G Y 2014 Acta Phys. Sin. 63 017101 (in Chinese) [周春宇, 张鹤鸣, 胡辉勇, 庄奕琪, 吕懿, 王斌, 王冠宇 2014 63 017101]
[11] Wei J Y, Maikap S, Lee M H, Lee C C, Liu C W 2006 Solid-State Electron. 50 109
[12] Wang B, Zhang H M, Hu H Y, Zhang Y M, Song J J, Zhou C Y, Li H C 2013 Acta Phys. Sin. 62 127102 (in Chinese) [王斌, 张鹤鸣, 胡辉勇, 张玉明, 宋建军, 周春宇, 李好晨 2013 62 127102]
[13] Zhang W, Fossum J G 2005 IEEE Trans. Electron Dev. 52 263
[14] Bindu B, DasGupta N, DasGupta A 2007 IEEE Trans. Electron Dev. 54 1889
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