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在纳米金刚石薄膜中注入剂量为1012 cm-2的氧离子，并进行700，800，900和1000 ℃的真空退火处理，系统研究薄膜的微结构和电化学性能结果表明，氧离子注入未退火（O120）和氧离子注入1000 ℃退火（O121000）电极的电势窗口分别为4.60 V和3.61 V，远大于其他电极的电势窗口，并且这两个样品的电极传质效率较高，说明氧离子注入和高温退火有利于提高电极的传质效率. 红外光谱测试表明，样品O120 和O121000的表面没有碳氢基团终止层，而其他样品均含有氢终止层，说明氧离子注入和高温退火破坏了薄膜表面含碳氢基团的氢终止层，提高了薄膜的电化学性能Raman光谱测试结果表明，金刚石含量较高、内应力较小和非晶石墨相无序化程度较大的样品具有较好的电化学性能；并且薄膜晶界处的非晶碳的团簇数量或者尺寸减小，样品的电化学性能提高.The nanocrystalline diamond (NCD) films are implanted by oxygen ions with a dose of 1×1012 cm-2 and subsequently annealed at 700, 800, 900 and 1000 ℃, respectively. The microstructure and electrochemical properties of these NCD films are investigated systematically and the results show that the potential windows of the unannealed sample (O120) and 1000 ℃ annealed sample (O121000) increase up to 4.6 V and 3.61 V, respectively. The mass transfer efficiencies of the two samples are also better, indicating that the oxygen ion implantation and 1000 ℃ annealing can improve the mass transfer efficiency of NCD film. The results of infrared spectrum measurements show that there are no hydrogen atoms that are terminated to the surfaces of samples O120 and O121000, while hydrogen atoms terminate to the surfaces of the other samples. It is indicated that oxygen ion implantation and 1000 ℃ annealing can damage hydrogen terminations in the surface, which improves the electrochemical performances of NCD films. Raman spectrum measurements suggest that high content of diamond phase, small internal stress and more disordered amorphous carbon can improve the electrochemical properties of NCD films. When the number or size of sp2 carbon clusters in amorphous carbon grain boundaries decreases, the electrochemical properties of NCD films become better.
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Keywords:
- nanocrystalline diamond films /
- oxygen ion implantation /
- electrochemical properties /
- microstructure
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[3] Green S J, Mahe L S A, Rosseinsky D R 2013 Electrochim. Acta 107 111
[4] Švorc L ubomír, Sochr Jozef, Svítková Jana 2013 Electrochim. Acta 87 503
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[21] Gu C Z, Wang Q, Li J J, Xia K 2013 Chin. Phys. B 22 098107
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[25] Gao M L 2010 M.S. Dissertation (Hefei: University of Science and Technology of China) (in Chinese) [高明亮 2010 硕士学位论文 (合肥: 中国科学技术大学)]
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[31] Hu X J, Ye J S, Hu H 2011 Appl. Phys. Lett. 99 131902
[32] Michaelson S, Lifshitz Y, Ternyak O 2007 Diamond Relat. Mater. 16 845
[33] Schwan J, Ulrich S, Batori V 1996 J. Appl. Phys. 80 440
[34] Sanchez N A, Rincon C, Zambrano G 2000 Thin Solid Films 373 247
[35] Abrasonis G, Gago R, Vinnichenko M 2006 Phys. Rev. B 73 125427
[36] Ferrari A C, Robertson J 2001 Phys. Rev. B 64 075414
[37] Pleskov Y V, Krotova M D, Saveliev A V, Ralchenko V G 2007 Diamond Relat. Mater. 16 2114
[38] Ye H T, Sun C Q, Huang H T, Peter H 2000 Appl. Phys. Lett. 78 13
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[1] Chailapakul O, Aksharanandana P, Frelink T 2001 Sens. Actuat. B 80 193
[2] Denisova A E, Pleskov Y V 2008 Russ. J. Electrochem. 44 1083
[3] Green S J, Mahe L S A, Rosseinsky D R 2013 Electrochim. Acta 107 111
[4] Švorc L ubomír, Sochr Jozef, Svítková Jana 2013 Electrochim. Acta 87 503
[5] Zhao G H, Shen S H, Li M F 2008 Chemosphere 73 1407
[6] Zhao X Y, Zang J B, Wang Y H 2009 Electrochem Commun. 11 1297
[7] Pang Y N, Zhao G H, Liu L 2009 Chin. Environ. Sci. 12 1255 (in Chinese) [庞雅宁, 赵国华, 刘磊 2009 中国环境科学 12 1255]
[8] Hu H, Hu X J, Bai B W, Chen X H 2012 Acta Phys. Sin. 61 148101 (in Chinese) [胡衡, 胡晓君, 白博文, 陈小虎 2012 61 148101]
[9] Hu X J, Ye J S, Liu H J 2011 J Appl Phys. 109 053524
[10] Gu S S, Hu X J, Huang K 2013 Acta Phys. Sin. 62 118101 (in Chinese) [顾珊珊, 胡晓君, 黄凯 2013 62 118101]
[11] Pan J P, Hu X J, Lu L P, Yin C 2010 Acta Phys. Sin. 59 7410 (in Chinese) [潘金平, 胡晓君, 陆利平, 印迟 2010 59 7410]
[12] Pleskov Y V, Krotova M D, Elkin V V 2007 Electrochim. Acta 52 5470
[13] Pleskov Y V, Krotova M D, Ralchenko V G 2010 Russ. J. Electrochem. 46 1063
[14] Barek J, Jandová K, Pecková K, Zima J 2007 Talanta 74 421
[15] Wang S, Swope V M, Butler J E 2009 Diamond Relat. Mater. 18 669
[16] Silva E L, Neto M A, Fernandes A J S, Bastos A C, Silva R F, Zheludkevich M L, Oliveira F J 2010 Diamond Relat. Mater. 19 1330
[17] Liu X B, Jia X P, Zhang Z F, Huang H Li, Zhou Z X, Ma H A 2011 Chin. Phys. B 20 128102
[18] Zhang Z F, Jia X P, Liu X B, Hu M H, Li Y, Yan B M, Ma H A 2012 Chin. Phys. B 21 038103
[19] Li Y, Jia X P, Hu M H, Liu X B, Yan B M, Zhou Z X, Zhang Z Fei, Ma H A 2012 Chin. Phys. B 21 058101
[20] Li S S, Ma H A, Li X L, Su T C, Huang G F, Li Y, Jia X P 2011 Chin. Phys. B 20 028103
[21] Gu C Z, Wang Q, Li J J, Xia K 2013 Chin. Phys. B 22 098107
[22] Gu S S, Hu X J 2013 J. Appl. Phys. 114 023506
[23] Haymond S, Babcock G T, Swain G M 2002 J. Am. Chem. Soc. 124 10634
[24] Chen H Y, Ju H 1992 Chin. J. Anal. Chem. 9 997 (in Chinese) [陈洪渊, 鞠熀 1992 分析化学 9 997]
[25] Gao M L 2010 M.S. Dissertation (Hefei: University of Science and Technology of China) (in Chinese) [高明亮 2010 硕士学位论文 (合肥: 中国科学技术大学)]
[26] Mcnamara K M, Williams B E, Gleason K K 1994 J. Appl. Phys. 76 2466
[27] Tang C J, Neves A J, Carmo M C 2005 Appl. Phys. Lett. 86 223107
[28] Tang C J, Neves A J, Fernandes A J S 2002 Diamond Relat. Mater. 11 527
[29] Yan B M, Jia X P, Qin J M, Sun S S, Zhou Z X, Fang C, Ma H A 2014 Acta Phys. Sin. 63 48101 (in Chinese) [颜丙敏, 贾晓鹏, 秦杰明, 孙士帅, 周振翔, 房超, 马红安 2014 63 48101]
[30] Simon N, Girard H, Ballutaud D 2005 Diamond Relat. Mater. 14 1179
[31] Hu X J, Ye J S, Hu H 2011 Appl. Phys. Lett. 99 131902
[32] Michaelson S, Lifshitz Y, Ternyak O 2007 Diamond Relat. Mater. 16 845
[33] Schwan J, Ulrich S, Batori V 1996 J. Appl. Phys. 80 440
[34] Sanchez N A, Rincon C, Zambrano G 2000 Thin Solid Films 373 247
[35] Abrasonis G, Gago R, Vinnichenko M 2006 Phys. Rev. B 73 125427
[36] Ferrari A C, Robertson J 2001 Phys. Rev. B 64 075414
[37] Pleskov Y V, Krotova M D, Saveliev A V, Ralchenko V G 2007 Diamond Relat. Mater. 16 2114
[38] Ye H T, Sun C Q, Huang H T, Peter H 2000 Appl. Phys. Lett. 78 13
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