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Based on semiconductor physics and the essential structure of IGBT, the turn-off mechanism of IGBT is deeply discussed regarding the problem of turn-off time changing with voltage and current. The laws of turn-off time changing with voltage and current are deduced, i.e., the turn-off time increases with voltage increasing and decreases with current increasing. The physical mechanisms of the laws are found out. The simulation results and experimental results, demonstrate that the derived and the existing law are constant, thereby proving the correctness of the derived law. It is put forward that the law of IGBT turn-off time changing with current and voltage accords with the complex law of exponent and hyperbola. For further studying the IGBT turn-off mechanism and solving the engineering puzzles including the power electronic dead time setting, the present study is significant in theory and practical application.
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Keywords:
- turn-off mechanism /
- depletion layer /
- carrier /
- turn-off time
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[16] Marco A R, Abraham C S 2011 IEEE Transactions on Industrial Electronics 58 1625
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[20] Tang Y, Hu A, Chen M 2009 Transactions of China Electro Technical Society 24 76
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[1] Xu D H 2008 Modern power electronics device principle and Application technology (Beijing: Mechanical Industry Press) p92 (in Chinese) [徐德鸿 2008 现代电力电子器件原理与应用技术 (北京: 机械工业出版社) 第92页]
[2] Lin W X 2002 Modern power electronics circuit (Hangzhou: Zhejiang University Press) p44 (in Chinese) [林渭勋 2002 现代电力电子电路 (杭州: 浙江大学出版社) 第44页]
[3] Angus B, Yang S Y 2011 IEEE Transactions on Power Electronics 26 30193031
[4] Wu Y, Zhang W R, Liu X M 2005 Power Semiconductor Devices: Theory and Application (Beijing: Chemical Industry Press) p262 (in Chinese) [吴郁, 张万荣, 刘兴明 2005 功率半导体器件–理论及应用 (北京: 化学工业出版社) 第262页]
[5] Yuan S C 2007 IGBT Field Effect Semiconductor Power Devices (Beijing: Science Press) p100 (in Chinese) [袁寿财 2007 IGBT场效应半导体功率器件导论 (北京: 科学出版社) 第100页]
[6] Azzopardia S, Benmansoura A, Ishikob M, Woirgarda E 2005 Microelectronics Reliability 45 1700
[7] Chen Z M, Li S Z 2008 Wide bandgap semiconductor power electronic device and its application (Beijing: Mechanical Industry Press) p88 (in Chinese) [陈治明, 李守智 2008 宽禁带半导体电力电子器件及其应用 (北京: 机械工业出版社) 第88页]
[8] Yuan L Q, Zhao Z M, Song G S and Wang Z Y 2011 Power semiconductor device theory and application (Beijing: Mechanical Industry Press) p111 (in Chinese) [袁立强, 赵争鸣, 宋高升, 王正元 2011 电力半导体器件原理与应用 (北京: 机械工业出版社) 第111页]
[9] Zhao Y Q, Yao S Y and Xie X D 2010 Semiconductor physics and devices (3rd Edn.) (Beijing: Electronics Industry Press) p212 (in Chinese) [赵毅强, 姚素英, 解晓东 2010 半导体物理与器件 (第三版) (北京: 电子工业出版社) 第212页]
[10] Huang R, Wang Y 2010 Semiconductor physics and device fundamentals (Beijing: Electronics Industry Press) p325 (in Chinese) [黄如, 王漪 2010 半导体物理与器件基础 (北京: 电子工业出版社) 第325页]
[11] Fang J P, Hao Y, Liu H X 2001 Acta Phys. Sin. 50 1172 (in Chinese) [方建平, 郝跃, 刘红侠 2001 50 1172]
[12] Zhou X D, Lin W, Fang J 2006 Acta Phys. Sin. 55 3360 (in Chinese) [周贤达, 林薇, 方健 2006 55 3360]
[13] Nishad P, Diganta D, Michael P 2012 Microelectronics Reliability 52 482
[14] Urresti J, Castellazzi A 2007 Microelectronics Reliability 47 1725
[15] Bryant A T, Kang X S 2006 IEEE Transactions on Power Electronics 21 295
[16] Marco A R, Abraham C S 2011 IEEE Transactions on Industrial Electronics 58 1625
[17] Du M X, Wei K X 2011 Acta Phys. Sin. 60 108401 (in Chinese) [杜明星, 魏克新 2011 60 108401]
[18] Patrick R P, Enrico S, Jerry L 2003 IEEE Transactions on Power Electronics 18 1220
[19] Tang Y 2010 Ph. D. Study on Device Model Theory (Wuhan: Naval University of Engineering) (in Chinese) [唐勇 2010 博士学位论文 (武汉: 海军工程大学)]
[20] Tang Y, Hu A, Chen M 2009 Transactions of China Electro Technical Society 24 76
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