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通过专用电力电子仿真软件进行电路仿真, 定性分析了固定关断时间(fixed off-time, FOT)控制Buck变换器输出电压相位滞后于电感电流相位的原因及其引发脉冲簇发现象的机理, 探讨了如何调整输出电容等效串联电阻(equivalent series resistance, ESR)的大小来消除这些复杂非线性现象, 并定量给出了FOT控制Buck变换器处于稳定工作状态时的ESR临界值.结果表明, 输出电容ESR对FOT控制Buck变换器工作状态的影响较大, 当ESR小于临界值时, 输出电压相位滞后于电感电流相位, 发生脉冲簇发现象;而当ESR大于临界值时, 输出电压与电感电流的变化保持同步, 脉冲簇发现象消失.通过描述函数法建立了参考电压至输出电压的传递函数, 由Routh-Hurwitz判据说明了ESR临界值是FOT控制Buck变换器的失稳条件.Based on the power simulation software, the reason of the output voltage phase lagging behind the inductor current phase is analyzed qualitatively, and the mechanism to cause the pulse bursting phenomenon in fixed-off-time (FOT) controlled Buck converter is explained. The way to choose the equivalent series resistance (ESR) of output capacitor to eliminate these complex nonlinear phenomena is discussed. The critical ESR to ensure the state operation of FOT controlled Buck converter is obtained. The study results indicate that the ESR has a great effect on the operation state of FOT controlled Buck converter. When the ESR is smaller than the critical value, the output voltage phase lags behind the inductor current phase, resulting in the pulse bursting phenomenon; while when the ESR is larger than the critical value, the output voltage variation keeps in phase with the inductor current variation, the pulse bursting phenomenon disappearing. In addition, the describing function method is used to obtain the transfer function from the reference voltage to the output voltage. By using the Routh-Hurwitz criterion, it is indicated that the critical ESR is the condition of destabilizing FOT controlled Buck converter.
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Keywords:
- fixed off-time /
- equivalent series resistance /
- pulse bursting /
- stability
[1] Bao B C, Zhou G H, Xu J P, Liu Z 2011 IEEE Trans. Power Electron. 26 1968
[2] Bao B C, Xu J P, Liu Z 2009 Chin. Phys. B 18 4742
[3] Bao B C, Xu J P, Liu Z 2009 Acta Phys. Sin. 58 2949 (in Chinese) [包伯成, 许建平, 刘中 2009 58 2949]
[4] Xie F, Yang R, Zhang B 2010 Acta Phys. Sin. 59 8393 (in Chinese) [谢帆, 杨汝, 张波 2010 59 8393]
[5] Bao B C, Zhou G H, Xu J P, Liu Z 2010 Acta Phys. Sin. 59 3769 (in Chinese) [包伯成, 周国华, 许建平, 刘中 2010 59 3769]
[6] Zhou G H, Bao B C, Xu J P, Jin Y Y 2010 Chin. Phys. B 19 050509
[7] Zhou G H, Xu J P, Bao B C, Jin Y Y 2010 Chin. Phys. B 19 060508
[8] Wang F Q, Ma X K, Yan Y 2011 Acta Phys. Sin. 60 060510 (in Chinese) [王发强, 马西奎, 闫晔 2011 60 060510]
[9] Xie F, Yang R, Zhang B 2011 IEEE Trans. Circuits Syst. I 58 2269
[10] Liu F 2010 Chin. Phys. B 19 080511
[11] Sahu B, Rincón-Mora G A 2007 IEEE Trans. Circuits Syst. I 54 312
[12] Li J, Lee F C 2010 IEEE Trans. Circuits Syst. I 57 2552
[13] Wang J P, Xu J P, Xu Y J 2011 Acta Phys. Sin. 60 058401 (in Chinese) [王金平, 许建平, 徐杨军 2011 60 058401]
[14] Wang J P, Xu J P, Bao B C 2011 IEEE Trans. Ind. Electron. 58 5406
[15] Sun J 2002 IEEE Trans. Aerospace Electron Syst. 38 1104
[16] Panov Y, Jovanović M M 2002 IEEE Trans. Power Electron. 17 596
[17] Cheng L, Ni J H, Hong Z L, Liu Y 2011 Research and Progress of Solid Electronics 31 286 (in Chinese) [程林, 倪金华, 洪志良, 刘洋 2011 固体电子学研究与进展 31 286]
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[1] Bao B C, Zhou G H, Xu J P, Liu Z 2011 IEEE Trans. Power Electron. 26 1968
[2] Bao B C, Xu J P, Liu Z 2009 Chin. Phys. B 18 4742
[3] Bao B C, Xu J P, Liu Z 2009 Acta Phys. Sin. 58 2949 (in Chinese) [包伯成, 许建平, 刘中 2009 58 2949]
[4] Xie F, Yang R, Zhang B 2010 Acta Phys. Sin. 59 8393 (in Chinese) [谢帆, 杨汝, 张波 2010 59 8393]
[5] Bao B C, Zhou G H, Xu J P, Liu Z 2010 Acta Phys. Sin. 59 3769 (in Chinese) [包伯成, 周国华, 许建平, 刘中 2010 59 3769]
[6] Zhou G H, Bao B C, Xu J P, Jin Y Y 2010 Chin. Phys. B 19 050509
[7] Zhou G H, Xu J P, Bao B C, Jin Y Y 2010 Chin. Phys. B 19 060508
[8] Wang F Q, Ma X K, Yan Y 2011 Acta Phys. Sin. 60 060510 (in Chinese) [王发强, 马西奎, 闫晔 2011 60 060510]
[9] Xie F, Yang R, Zhang B 2011 IEEE Trans. Circuits Syst. I 58 2269
[10] Liu F 2010 Chin. Phys. B 19 080511
[11] Sahu B, Rincón-Mora G A 2007 IEEE Trans. Circuits Syst. I 54 312
[12] Li J, Lee F C 2010 IEEE Trans. Circuits Syst. I 57 2552
[13] Wang J P, Xu J P, Xu Y J 2011 Acta Phys. Sin. 60 058401 (in Chinese) [王金平, 许建平, 徐杨军 2011 60 058401]
[14] Wang J P, Xu J P, Bao B C 2011 IEEE Trans. Ind. Electron. 58 5406
[15] Sun J 2002 IEEE Trans. Aerospace Electron Syst. 38 1104
[16] Panov Y, Jovanović M M 2002 IEEE Trans. Power Electron. 17 596
[17] Cheng L, Ni J H, Hong Z L, Liu Y 2011 Research and Progress of Solid Electronics 31 286 (in Chinese) [程林, 倪金华, 洪志良, 刘洋 2011 固体电子学研究与进展 31 286]
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