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基于共轭聚合物给体材料聚3-己基噻吩(P3HT)和富勒烯衍生物受体材料(6, 6)-苯基-C61 (PCBM) 共混的体异质结结构的聚合物太阳能电池因其空穴载流子迁移率低而限制了P3HT:PCBM功能层厚度, 从而影响了器件对入射光的吸收.在聚合物功能层和反射电极间插入TiO2光学间隔层可以使器件内电场重新分布并改善器件的光吸收.基于薄膜传递矩阵法计算了不同的P3HT:PCBM功能层厚度和TiO2插入层厚度的器件内光电场和光吸收. 理论分析证明:器件结构为铟锡氧化物(ITO) (100 nm)/聚3, 4-乙撑二氧噻吩/聚苯乙烯磺酸盐PEDOT:PSS (40 nm)/P3HT:PCBM/TiO2/LiF (1 nm)/Al (120 nm)时, 插入10 nm厚的TiO2膜层可以使器件的聚合物功能层厚度在减薄25 nm的同时增加16.3%的光子吸收数,并且不明显降低功能层的激子分离概率,即功能层和TiO2光学间隔层厚度分别约为75和10 nm时的器件性能为宜,此结果通过器件性能实验得以证实.The thickness of the active layer is limited by its low carrier mobility in the polymer solar cell composed of the blend bulk-heterojunction formed by conjugated polymer as donor material and fullerene as acceptor material, which can affect the light absorption in the polymer solar cell. TiO2 inserted into polymer solar cell as optical spacer can redistribute the electromagnetic field inside the device and enhance the light absorption of it. In this paper, light intensity and absorption inside the devices with different thicknesses of P3HT:PCBM layer and TiO2 layer are calculated based on transfer matrix method. Theoretical analysis shows that inserting 10 nm TiO2 into the device can increase 16.3% light absorption, simultaneously thinning the active layer by 25 nm and the thickness of active layer will not apparently reduce the dissociation rate of the excitons. With the device structure of ITO (100 nm)/PEDOT:PSS (40 nm)/P3HT:PCBM/TiO2/LiF (1 nm)/Al (120 nm), the optimal thicknesses of the active layer and TiO2 are 75 nm and 10 nm respectively, which is confirmed by the experimental results from the devices with three different structures.
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Keywords:
- optical spacer /
- transfer matrix method /
- polymer solar cell
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[22] Braun C L 1984 J. Chem. Phys. 80 4157
[23] Zhu D X, Shen W D, Ye H, Liu X, Zhen H Y 2008 J. Phys. D: Appl. Phys. 41 235104
[24] Cheng H M, Ma J M, Zhao Z G, Qi L M 1995 Chem. Mater. 7 663
[25] Kim J Y, Kim S H, Lee H H, Lee K, Ma W L, Gong X, Heeger A J 2006 Adv. Mater. 18 572
[26] Koster L J A, Smits E C P, Mihailetchi V D, Blom P W M 2005 Phys. Rev. B 72 085205
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[1] Li G, Shrotriya V, Huang J S, Yao Y, Moriarty T, Emery K, Yang Y 2005 Nat. Mater. 4 864
[2] Park S H, Roy A, Beaupre S, Cho S, Coates N, Moon J S, Moses D, Leclerc M, Lee K, Heeger A J 2009 Nat. Photonics 3 297
[3] Kim J Y, Lee K, Coates N E, Daniel M, Nguyen T Q, Mark D, Heeger A J 2007 Science 317 222
[4] Chen D, Atsuhiro N, Wei D, Dennis N, Thomas P R 2011 Nano Lett. 11 561
[5] Oskar A, Christoph L, Siegfried B 2011 Phys. Rev. B 84 085208
[6] Melzer C, Koop E, Mihailetchi V D, Blom P W M 2004 Adv. Funct. Mater. 14 865
[7] Monestier F, Simon J J, Torchio P, Escoubas L, Flory F, Bailly S, Bettignies R, Stephane G, Defranoux C 2007 Sol. Energy Mater. Sol. Cells 91 405
[8] Pettersson L A A A, Roman L S, Olle I 1999 J. Appl. Phys. 86 487
[9] Hao Z H, Hu Z Y, Zhang J J, Hao Q Y, Zhao Y 2010 Acta Phys. Sin. 60 117106 (in Chinese) [郝志红, 胡子阳, 张建军, 郝秋艳, 赵颖 2010 60 117106]
[10] Gilot J, Barbu I, Wienk M M, Janssen R A J 2007 Appl. Phys. Lett. 91 113520
[11] Snaith H J, Greenham N C, Friend R H 2004 Adv. Mater. 16 1640
[12] Hänsel H, Zettl H, Krausch G, Kisselev R, Thelakkat M, Schmidt H W 2003 Adv. Mater. 15 2056
[13] Hayakawa A, Yoshikawa O, Fujieda T, Uehara K, Yoshikawa S 2007 Appl. Phys. Lett. 90 163517
[14] Lee K M, Hsu C Y, Chiu W H, Tsui M C, TungY L, Tsai S Y, Ho K C 2009 Sol. Energy Mater. Sol. Cells 93 2003
[15] Beek W J E, Wienk M M, Janssen R A J 2004 Adv. Mater. 16 1009
[16] Long Y B 2009 Appl. Phys. Lett. 95 193301
[17] Schulze K, Uhrich C, Schueppel R, Leo K, Pfeiffer M, Brier E, Reinhold E, Baeuerle P 2006 Adv. Mater. 18 2872
[18] Andersson B V, Huang D M, Moulé A J, Olle I 2009 Appl. Phys. Lett. 94 043302
[19] Macleod H A 2001 Thin-Film Optical Filters (3rd Ed.) (Bristol: Institute of Physics Publishing)
[20] Meng X J, Cheng J G, Li B, Tang J, Ye H J, Guo S L, Chu J H 2000 Acta Phys. Sin. 49 811 (in Chinese) [孟祥建, 程建功, 李标, 唐军, 叶红娟, 郭少令, 褚君浩 2000 49 811]
[21] Mihailetchi V D, Koster L J A, Hummelen J C, Blom P W M 2004 Phys. Rev. Lett. 93 216601
[22] Braun C L 1984 J. Chem. Phys. 80 4157
[23] Zhu D X, Shen W D, Ye H, Liu X, Zhen H Y 2008 J. Phys. D: Appl. Phys. 41 235104
[24] Cheng H M, Ma J M, Zhao Z G, Qi L M 1995 Chem. Mater. 7 663
[25] Kim J Y, Kim S H, Lee H H, Lee K, Ma W L, Gong X, Heeger A J 2006 Adv. Mater. 18 572
[26] Koster L J A, Smits E C P, Mihailetchi V D, Blom P W M 2005 Phys. Rev. B 72 085205
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