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基于多层膜系模型的传输矩阵方法、麦克斯韦方程和光子吸收方程，研究了NiOx作为替代3，4-乙撑二氧噻吩：聚苯乙烯磺酸盐（PEDOT：PSS）的空穴传输材料对聚3-己噻吩（P3HT）和富勒烯衍生物（[6，6]-phenyl-C61-butyric acid methyl ester，PC61BM）共混体异质结有机太阳能电池器件内部光电场分布和光吸收特性的影响. 分别制备了以NiOx和PEDOT：PSS为空穴传输层，P3HT：PCBM为活性层的有机太阳能电池，并通过数值模拟的方法比较了NiOx和PEDOT：PSS两种空穴传输材料对器件光伏特性的影响. 结果表明：10 nm的NiOx空穴传输层器件比40 nm 的PEDOT：PSS 器件获得了更大的短路电流和填充因子，并具有更高的能量转化效率.Polymer solar cell composed of the blend bulk- heterojunctions is fabricated by the conjugated polymer as donor material and fullerene as acceptor material. P3HT and PCBM are chosen in the present study. The effect of the NiOx layer on the light absorption of the polymer solar cell is investigated via the transfer matrix of the multilayer dielectric film, Maxwell equations and photon absorption equation. NiOx as alternative material of PEDOT:PSS in polymer solar cell can redistribute the electromagetic field of device and effectively improve the light absortption. in the device with structure of ITO/HTL/P3HT:PCBM/LiF:Al, and the effects of PEDOT:PSS and the NiOx on the performance of device are investigated by numerical simulation. The results show that the optimal NiOx layer device with a thickness of 10 nm has a larger short-circuit current, filling factor and energy-conversion efficiency than the 40 mm thick PEDOT:PSS device.
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Keywords:
- NiOx /
- P3HT：PCBM /
- polymer solar cell /
- light absorption
[1] Padinger F, Rittberger R S, Sariciftci N S 2003 Adv. Funct. Mater. 13 85
[2] Ma W, Yang C, Gong X, Lee K, Heeger A J 2005 Adv. Funct. Mater. 15 1617
[3] Kim J Y, Kim S H, Lee H H, Lee K, Ma W, Gong X, Heeger A J 2006 Adv. Mater. 18 572
[4] Li G, Yao Y, Yan H, Shrotriya V, Yang G, Yang Y 2007 Adv. Funct. Mater. 17 1636
[5] Girtan M, Rusu M 2010 Sol. Energy Mater. Sol. Cells 94 446
[6] Rider D A, Worfolk B J, Harris K D, Lalany A, Shahbazi K, Fleischauer M D, Buriak J M 2010 Adv. Funct. Mater. 20 2404
[7] Hains A W, Marks T J 2008 Appl. Phys. Lett. 92 023504
[8] Pingree L S, Macleod B A, Ginger D S 2008 J. Phys. Chem. C 112 7922
[9] Kim J, Jung S, Jeong I 2012 J. Opt. Soc. Korea 16 6
[10] Li G L, Li J, Zhen H Y 2012 Acta Phys. Sin. 61 207203 (in Chinese) [李国龙, 李进, 甄红宇 2012 61 207203]
[11] Gilot J, Barbu I, Wienk M M, Janssen R A 2007 Appl. Phys. Lett. 91 113520
[12] McNeill C R, Westenhoff S, Groves C, Friend R H, Greenham N C 2007 J. Phys. Chem. C 111 19153
[13] Credgington D, Durrant J R 2012 J. Phys. Chem. Lett. 3 1465
[14] Faria G C, de Azevedo E R, von Seggern H 2013 Macromolecules 46 7865
[15] Irwin M D, Servaites J D, Buchholz D B, Leever B J, Liu J, Emery J D, Marks T J 2011 Chem. Mater. 23 2218
[16] Xiao Z G, Zeng X S, Guo H M, Zhao Z F, Shi T F, Wang Y Q 2012 Acta Phys. Lett. 61 026802 (in Chinese) [肖正国, 曾雪松, 郭浩民, 赵志飞, 史同飞, 王玉琦 2012 61 026802]
[17] Shen X C 1992 Optical Properties of Semiconductor (Beijing: Science Press) p20 (in Chinese) [沈学础 1992 半导体光学性质 (北京: 科学出版社) 第20页]
[18] Monestier F, Simon J J, Torchio P, Escoubas L, Flory F, Bailly S, Defranoux C 2007 Sol. Energy Mater. Sol. Cells 91 405
[19] Vacar D, Maniloff E S, McBranch D W, Heeger A J 1997 Phys. Rev. B 56 4573
[20] Deibel C, Strobel T, Dyakonov V 2009 Phys. Rev. Lett. 103 036402
[21] Hausermann R, Knapp E, Moos M, Reinke N A, Flatz T, Ruhstaller B 2009 J. Appl. Phys. 106 507
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[1] Padinger F, Rittberger R S, Sariciftci N S 2003 Adv. Funct. Mater. 13 85
[2] Ma W, Yang C, Gong X, Lee K, Heeger A J 2005 Adv. Funct. Mater. 15 1617
[3] Kim J Y, Kim S H, Lee H H, Lee K, Ma W, Gong X, Heeger A J 2006 Adv. Mater. 18 572
[4] Li G, Yao Y, Yan H, Shrotriya V, Yang G, Yang Y 2007 Adv. Funct. Mater. 17 1636
[5] Girtan M, Rusu M 2010 Sol. Energy Mater. Sol. Cells 94 446
[6] Rider D A, Worfolk B J, Harris K D, Lalany A, Shahbazi K, Fleischauer M D, Buriak J M 2010 Adv. Funct. Mater. 20 2404
[7] Hains A W, Marks T J 2008 Appl. Phys. Lett. 92 023504
[8] Pingree L S, Macleod B A, Ginger D S 2008 J. Phys. Chem. C 112 7922
[9] Kim J, Jung S, Jeong I 2012 J. Opt. Soc. Korea 16 6
[10] Li G L, Li J, Zhen H Y 2012 Acta Phys. Sin. 61 207203 (in Chinese) [李国龙, 李进, 甄红宇 2012 61 207203]
[11] Gilot J, Barbu I, Wienk M M, Janssen R A 2007 Appl. Phys. Lett. 91 113520
[12] McNeill C R, Westenhoff S, Groves C, Friend R H, Greenham N C 2007 J. Phys. Chem. C 111 19153
[13] Credgington D, Durrant J R 2012 J. Phys. Chem. Lett. 3 1465
[14] Faria G C, de Azevedo E R, von Seggern H 2013 Macromolecules 46 7865
[15] Irwin M D, Servaites J D, Buchholz D B, Leever B J, Liu J, Emery J D, Marks T J 2011 Chem. Mater. 23 2218
[16] Xiao Z G, Zeng X S, Guo H M, Zhao Z F, Shi T F, Wang Y Q 2012 Acta Phys. Lett. 61 026802 (in Chinese) [肖正国, 曾雪松, 郭浩民, 赵志飞, 史同飞, 王玉琦 2012 61 026802]
[17] Shen X C 1992 Optical Properties of Semiconductor (Beijing: Science Press) p20 (in Chinese) [沈学础 1992 半导体光学性质 (北京: 科学出版社) 第20页]
[18] Monestier F, Simon J J, Torchio P, Escoubas L, Flory F, Bailly S, Defranoux C 2007 Sol. Energy Mater. Sol. Cells 91 405
[19] Vacar D, Maniloff E S, McBranch D W, Heeger A J 1997 Phys. Rev. B 56 4573
[20] Deibel C, Strobel T, Dyakonov V 2009 Phys. Rev. Lett. 103 036402
[21] Hausermann R, Knapp E, Moos M, Reinke N A, Flatz T, Ruhstaller B 2009 J. Appl. Phys. 106 507
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