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研究了线偏振光振动方向对InGaP/InGaAs/Ge三结太阳电池开路电压的影响, 结果表明开路电压随线偏振光电位移矢量振动方向按周期性变化,变化的幅度在1%4%左右.理论分析证实了线偏振光电位移矢量的调制可以改变太阳电池的输出开路电压,是由于三结太阳电池晶体结构以及应力影响导致能带结构出现各向异性产生的. 此外,实验结合理论分析,研究了三结太阳电池开路电压随光照度的变化关系, 得出开路电压随光强变化成对数关系.拟合结果说明三结级联太阳电池可以简单看成三个单结太阳电池串联,其理想因子接近6,是由于三结太阳电池中缺陷影响的结果.In this paper, it is investigated experimentally that the open-circuit voltage of InGaP/InGaAs/Ge triple-junction solar cell is influenced by the vibration direction of the electric vector of linearly polarized light. The results show that those voltages are subjected to periodic changes with the vibration direction of the electric vector, and the magnitude of change is about 1%4%. It is due to the effect of anisotropy of band structure in the three-junction solar cell,which is confirmed by theoretical analysis. In addition, through combining the experimental study with theoretical analysis, the relationship between open-circuit voltage and illumination, is studied, showing that they are related to each other logarithmically, which is different from characteristics of a single-junction solar cell. From fitting results, it is indicated that the triple-junction solar cells may be regarded as three diodes connected in series, of which the ideality factor is close to 6. This is due to many defects in three-junction solar cells.
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Keywords:
- three-junction solar cell /
- linearly polarized light /
- the vibration direction of the electric vector /
- open-circuit voltage
[1] Shah A, Torres P, Tscharner R, Wyrsch N, Keppner H 1999 Scinece 258 692
[2] Goetzberger A, Luther J, Willeke G 2002 Solar Cells 74 1
[3] Singh P, Singh S N, Lal M, Husain M 2008 Sol. Energy Mater. Sol. Cells 92 1611
[4] Breitenstein O, Bauer J, Rakotoniaina J P 2007 Semiconductors 41 440
[5] Rud' V Yu, Rud' Yu V, Khvostikov V P 1999 Semiconductors 33 689
[6] Hagglund C, Zach M, Petersson G, Kasemo B 2008 Appl. Phys. Lett. 92 053110
[7] zutic I, Fabian J, Sarma S D 2010 Phys. Rev. B 64 121201(R)
[8] Baur C, Bett A W, Dimroth F, Siefer G, Meusel M, Bensch W, Köstler W, Strobl G 2007 J. Sol. Energy Eng. 129 258
[9] Nishioka K, Takamotob T, Agui T, Kaneiwab M, Uraokac Y, Fuyuki T 2006 Sol. Energy Mater. Sol. Cells 90 1308
[10] Nishioka K, Sueto T, Uchida M, Ota Y 2010 J. Electron. Mater. 39 704
[11] Chen M B, Cui R Q, Wang L X, Zhang Z W, Lu J F, Chi W Y 2004 Acta Phys. Sin 53 3632 (in Chinese) [陈鸣波, 崔容强, 王亮兴, 张忠卫, 陆剑峰, 池卫英 2004 53 3632]
[12] Liu L, Chen N F, Wang Y, Bai Y M, Cui M, Gao F B 2009 Chin. Sci. Bull. 54 16 (in Chinese) [刘磊, 陈诺夫, 汪宇, 白一鸣, 崔敏, 高福宝 2009 科学通报 54 16]
[13] Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 60 068801]
[14] Xiao Y G, Li Z Q, Li Z M S 2008 Proc. SPIE 7043 70430B
[15] Xia J B, Zhu B F 1995 Semiconductor Superlattice Physics (Shanghai: Shanghai Science and Technology Press) pp427-432 (in Chinese) [夏建白, 朱邦芬 1995 半导体超晶格物理 (上海科学技术出版社) 第427-432页]
[16] Huang K, Zhu B F 1991 Chin. J. Semicond. 12 193 (in Chinese) [黄昆, 朱邦芬 1991 半导体学报 12 193]
[17] Hu J M, Wu Y Y, Qian Y, Yang D Z, He S Y 2009 Acta Phys. Sin. 58 5051 (in Chinese) [胡建民, 吴宜勇, 钱勇, 杨德庄, 何世禹 2009 58 5051]
[18] Mártil I, Redondo E, Ojeda A 1997 J. Appl. Phys. 81 2442
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[1] Shah A, Torres P, Tscharner R, Wyrsch N, Keppner H 1999 Scinece 258 692
[2] Goetzberger A, Luther J, Willeke G 2002 Solar Cells 74 1
[3] Singh P, Singh S N, Lal M, Husain M 2008 Sol. Energy Mater. Sol. Cells 92 1611
[4] Breitenstein O, Bauer J, Rakotoniaina J P 2007 Semiconductors 41 440
[5] Rud' V Yu, Rud' Yu V, Khvostikov V P 1999 Semiconductors 33 689
[6] Hagglund C, Zach M, Petersson G, Kasemo B 2008 Appl. Phys. Lett. 92 053110
[7] zutic I, Fabian J, Sarma S D 2010 Phys. Rev. B 64 121201(R)
[8] Baur C, Bett A W, Dimroth F, Siefer G, Meusel M, Bensch W, Köstler W, Strobl G 2007 J. Sol. Energy Eng. 129 258
[9] Nishioka K, Takamotob T, Agui T, Kaneiwab M, Uraokac Y, Fuyuki T 2006 Sol. Energy Mater. Sol. Cells 90 1308
[10] Nishioka K, Sueto T, Uchida M, Ota Y 2010 J. Electron. Mater. 39 704
[11] Chen M B, Cui R Q, Wang L X, Zhang Z W, Lu J F, Chi W Y 2004 Acta Phys. Sin 53 3632 (in Chinese) [陈鸣波, 崔容强, 王亮兴, 张忠卫, 陆剑峰, 池卫英 2004 53 3632]
[12] Liu L, Chen N F, Wang Y, Bai Y M, Cui M, Gao F B 2009 Chin. Sci. Bull. 54 16 (in Chinese) [刘磊, 陈诺夫, 汪宇, 白一鸣, 崔敏, 高福宝 2009 科学通报 54 16]
[13] Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 60 068801]
[14] Xiao Y G, Li Z Q, Li Z M S 2008 Proc. SPIE 7043 70430B
[15] Xia J B, Zhu B F 1995 Semiconductor Superlattice Physics (Shanghai: Shanghai Science and Technology Press) pp427-432 (in Chinese) [夏建白, 朱邦芬 1995 半导体超晶格物理 (上海科学技术出版社) 第427-432页]
[16] Huang K, Zhu B F 1991 Chin. J. Semicond. 12 193 (in Chinese) [黄昆, 朱邦芬 1991 半导体学报 12 193]
[17] Hu J M, Wu Y Y, Qian Y, Yang D Z, He S Y 2009 Acta Phys. Sin. 58 5051 (in Chinese) [胡建民, 吴宜勇, 钱勇, 杨德庄, 何世禹 2009 58 5051]
[18] Mártil I, Redondo E, Ojeda A 1997 J. Appl. Phys. 81 2442
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