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Solar cells with structure of ZnPc (20 nm)/C60 (10 nm) are fabricated by thermal evaporation. The photocurrent density (Jph) expressed by effective applied voltage (V0-Va) and light intensity (I) is derived from an analytical method, and it is shown that the results from the model are in good agreement with experimental results. The short-circuit current density (JSC) exhibits a nearly linear dependence on light intensity, which is partially determined by effective applied voltage. Thermal annealing treatment under an optimal condition of 100 ℃ and 20 min, improves JSC by 43.8%, lengthening its attenuation constant from 5.6h to 22.2 h, which is attributed to the improvement on interfacial morphology and the decrease of series resistance due to better contact of the layers.
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Keywords:
- short-circuit current density /
- light intensity /
- effective applied voltage /
- thermal annealing
[1] Kerp H R, Donker H, Koehorst R B M, Schaafsma T J, Faassen E E 1998 Chemical Physics Letters 298 302
[2] Senthilarasu S, Velumani S, Sathyamoorthy R, Subbarayan A, Ascencio J A, Canizal G, Sebastian P J, Chavez J A, Perez R 2003 Appl. Phys. A 77 383
[3] Aziz M S 2006 Solid-State Electronics 50 1238
[4] Brousse B, Ratier B, Moliton A 2004 Thin Solid Films 451-452 81
[5] Lessmann R, Hong Z, Scholz S, Maennig B, Riede M K, Leo K 2010 Organic Electronics 11 539
[6] Holger Spanggaard, Krebs F C 2004 Solar Energy Materials & Solar Cells 83 125
[7] Green M A, Emery K, HishikawaY, Warta W 2010 Prog. Photovolt: Res. Appl. 18 144
[8] Kwong C Y, Djurii Ac＇ A B, Chui P C, Lam L S M, Chan W K 2003 Applied Physics A –Materials Science & Processing 77 555
[9] Feng W, Gao Z K 2008 Acta Phys. Sin. 57 2567 (in Chinese) [封 伟、高中扩 2008 57 2567]
[10] Rostalski J, Meissner D 2000 Solar Energy Materials & Solar Cells 63 37
[11] ˇukauskas V K, Arlauskas A, Pranaitis M, Lessmann R, Riede M, Leo K 2010 Optical Materials
[12] Ren J,Zheng J B, Zhao J L 2007 Acta Phys. Sin. 56 2868 (in Chinese)[任 驹、郑建邦、赵建林 2007 56 2868]
[13] You H L, Zhang C F 2009 Chin. Phys. B 18 349
[14] Goodman A M, Rose A 1971 J. Appl. Phys. 42 2823
[15] Baessler H 1993 Phys. Status Solidi.175 15
[16] Koster L J A, Mihailetchi V D, Ramaker R, Xie H X, Blom P W M 2006 Proc. of SPIE 6192 61922
[17] Koster L J A, Mihailetchi V D, Xie H X, Blom P W M 2005 Applied Physics Letters 87 203
[18] Mihailetchi V D, Wildeman J, Blom P W M 2005 Physical Review Letters 94 126602
[19] Senthilarasu S, Sathyamoorthy R, Lalitha S, Subbarayan A 2005 Solid-State Electronics 49 813
[20] Geens W, Martens T, Poortmans J, Aernouts T, Manca J, Lutsen L, Heremans P, Borghs S, Mertens R, Vanderzande D 2004 Thin Solid Films 451-452 498
[21] Hein C, Mankel E, Mayer T, Jaegermann W 2010 Solar Energy Materials & Solar Cells 94 662
[22] You H L, Zhang C F 2009 Chin. Phys. B 18 2096
[23] Karak S, Ray S K, Dhar A 2010 Solar Energy Materials & Solar Cells 94 836
[24] Geiser A, Fan B, Benmansour H, Castro F, Heier J, Keller B, Mayerhofer K E, Nüesch F, Hany R 2008 Solar Energy Materials & Solar Cells 92 464
[25] Li X S,Peng Y Q,Yang Q S,Xing H W, Lu F P 2007 Acta Phys. Sin. 56 5441 (in Chinese) [李训栓、彭应全、杨青森、刑宏伟、路飞平 2007 56 5441]
[26] Xi X, Li F X, Meng Q L, Ding Y Q, Ji J J, Shi Z R, Li G H 2010 Solar Energy Materials & Solar Cells 94 924
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[1] Kerp H R, Donker H, Koehorst R B M, Schaafsma T J, Faassen E E 1998 Chemical Physics Letters 298 302
[2] Senthilarasu S, Velumani S, Sathyamoorthy R, Subbarayan A, Ascencio J A, Canizal G, Sebastian P J, Chavez J A, Perez R 2003 Appl. Phys. A 77 383
[3] Aziz M S 2006 Solid-State Electronics 50 1238
[4] Brousse B, Ratier B, Moliton A 2004 Thin Solid Films 451-452 81
[5] Lessmann R, Hong Z, Scholz S, Maennig B, Riede M K, Leo K 2010 Organic Electronics 11 539
[6] Holger Spanggaard, Krebs F C 2004 Solar Energy Materials & Solar Cells 83 125
[7] Green M A, Emery K, HishikawaY, Warta W 2010 Prog. Photovolt: Res. Appl. 18 144
[8] Kwong C Y, Djurii Ac＇ A B, Chui P C, Lam L S M, Chan W K 2003 Applied Physics A –Materials Science & Processing 77 555
[9] Feng W, Gao Z K 2008 Acta Phys. Sin. 57 2567 (in Chinese) [封 伟、高中扩 2008 57 2567]
[10] Rostalski J, Meissner D 2000 Solar Energy Materials & Solar Cells 63 37
[11] ˇukauskas V K, Arlauskas A, Pranaitis M, Lessmann R, Riede M, Leo K 2010 Optical Materials
[12] Ren J,Zheng J B, Zhao J L 2007 Acta Phys. Sin. 56 2868 (in Chinese)[任 驹、郑建邦、赵建林 2007 56 2868]
[13] You H L, Zhang C F 2009 Chin. Phys. B 18 349
[14] Goodman A M, Rose A 1971 J. Appl. Phys. 42 2823
[15] Baessler H 1993 Phys. Status Solidi.175 15
[16] Koster L J A, Mihailetchi V D, Ramaker R, Xie H X, Blom P W M 2006 Proc. of SPIE 6192 61922
[17] Koster L J A, Mihailetchi V D, Xie H X, Blom P W M 2005 Applied Physics Letters 87 203
[18] Mihailetchi V D, Wildeman J, Blom P W M 2005 Physical Review Letters 94 126602
[19] Senthilarasu S, Sathyamoorthy R, Lalitha S, Subbarayan A 2005 Solid-State Electronics 49 813
[20] Geens W, Martens T, Poortmans J, Aernouts T, Manca J, Lutsen L, Heremans P, Borghs S, Mertens R, Vanderzande D 2004 Thin Solid Films 451-452 498
[21] Hein C, Mankel E, Mayer T, Jaegermann W 2010 Solar Energy Materials & Solar Cells 94 662
[22] You H L, Zhang C F 2009 Chin. Phys. B 18 2096
[23] Karak S, Ray S K, Dhar A 2010 Solar Energy Materials & Solar Cells 94 836
[24] Geiser A, Fan B, Benmansour H, Castro F, Heier J, Keller B, Mayerhofer K E, Nüesch F, Hany R 2008 Solar Energy Materials & Solar Cells 92 464
[25] Li X S,Peng Y Q,Yang Q S,Xing H W, Lu F P 2007 Acta Phys. Sin. 56 5441 (in Chinese) [李训栓、彭应全、杨青森、刑宏伟、路飞平 2007 56 5441]
[26] Xi X, Li F X, Meng Q L, Ding Y Q, Ji J J, Shi Z R, Li G H 2010 Solar Energy Materials & Solar Cells 94 924
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