掺杂PEDOT ∶PSS对聚合物太阳能电池性能影响的研究

郝志红; 胡子阳; 张建军; 郝秋艳; 赵颖

doi:10.7498/aps.60.117106

摘要

研究了掺杂后poly(3,4-ethylene dioxythiophene):poly(styrenesulphonic acid)(PEDOT ∶PSS)电导率的变化以及掺杂PEDOT ∶PSS薄膜对聚合物太阳能电池器件性能的影响. 实验发现,向PEDOT ∶PSS中掺入极性溶剂二甲基亚砜(DMSO)明显提高了薄膜的电导率,掺杂后的电导率最大值达到1.25 S/cm,比未掺杂时提高了3个数量级. 将掺杂的PEDOT ∶PSS薄膜作为缓冲层应用于聚合物电池 (ITO/PEDOT ∶PSS/P3HT ∶PCBM/LiF/Al) 中,发现高电导率的PEDOT ∶PSS降低了器件的串联电阻,增加了器件的短路电流,从而提高了器件的性能. 最好的聚合物太阳能电池在100 mW/cm2的光照下,开路电压(Voc)为0.63 V,短路电流密度(Jsc)为11.09 mAcm-2,填充因子(FF)为63.7%,能量转换效率()达到4.45%.

关键词:

Abstract

In this paper, we investigate the doping effect on conductivity of poly(3,4-ethylene dioxythiophene):poly (styrenesulphonic acid)(PEDOT ∶PSS)and its influence on performance of polymer solar cell. The experiment demonstrates that the conductivity of PEDOT ∶PSS is improved obviously by doping polar solvent dimethyl sulfoxide (DMSO). The maximum of the conductivity is 1.25 S/cm when the doping concentration reaches 10 wt%, which increases about three orders of magnitude compared with the undoped. Based on doped PEDOT ∶PSS used as an anode buffer layer, the polymer solar cell (ITO/PEDOT ∶PSS/P3HT:PCBM/LiF/Al) shows an improvement of hole charge transport as well as an increase of short-circuit current density and a reduction of series resistance, owing to the higher conductivity of the doped PEDOT ∶PSS. Consequently, it improves the whole performance of polymer solar cell. The short-circuit current density (Jsc) of 11.09 mAcm-2, the open circuit voltage (Voc) of 0.63 V, and the fill factor (FF) of 63.7% are obtained under 100 mW/cm2 air-mass solar simulator illumination, yielding a 4.45% power conversion efficiency ().

Keywords:

作者及机构信息

1.
南开大学光电子薄膜器件与技术研究所,南开大学光电子薄膜器件与技术天津市重点实验室,南开大学光电信息技术科学教育部重点实验室,天津 300071;

2.
河北工业大学信息功能材料研究所,天津 300130

基金项目: 国家高技术研究发展计划(批准号: 2009AA05Z422)、国家重点基础研究发展计划(批准号:2011CBA00705, 2011CBA00706, 2011CBA00707)和天津市应用基础及前沿技术研究计划(批准号: 08JCZDJC 22200)资助的课题.

Authors and contacts

1.
Institute of Photo-Electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Opto-Electronic Information Science and Technology for Ministry of Education, Nankai University, Tianjin 300071, China;

2.
Institute of Information Functional Material of Hebei University of Technology, Tianjin 300130, China

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施引文献

[1]	Ma W L, Yang C Y, Gong X, Lee K, Heeger A J 2005 Adv. Funct. Mater. 15 1617
[2]
[3]	Li G, Shrotriya V, Yao Y, Yang Y 2005 Nat. Mater. 4 864
[4]
[5]	Scharber M C, Mhlbacher D, Koppe M, Denk P, Waldauf C, Heeger A J, Brabec C J 2006 Adv. Mater. 18 789
[6]
[7]	Yang X N, Loos J, Veenstra S C, Verhees W J H, Wienk M M, Kroon J M, Michels M A J, Janssen R A J 2005 Nano Lett. 5 4
[8]
[9]	Li G, Yao Y, Yang H C, Shrotriya V, Yang G W, Yang Y 2007 Adv. Funct. Mater. 17 1636
[10]
[11]	Yu H Z, Peng J B, Zhou X M 2008 Acta Phys. Sin. 57 3898 (in Chinese) [於黄忠、彭俊彪、周晓明 2008 57 3898]
[12]	Xu M, Peng J B 2010 Acta Phys. Sin. 59 2131 (in Chinese) [徐苗、彭俊彪 2010 59 2131]
[13]
[14]
[15]	Hoppe H, Sariciftci N S 2006 J. Mater. Chem. 16 45
[16]	Moliton A, Nunzi J M 2006 Polym. Int. 55 583
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[18]
[19]	Riedel I, Parisi J, Dyakonov V, Lutsen L, Vanderzande D, Hummelen J C 2004 Adv. Funct. Mater. 14 38
[20]	Mazhari B 2006 Sol. Energy Mater Sol. Cells 90 1021
[21]
[22]
[23]	Xue J G, Uchida S, Rand B P, Forrest S R 2004 Appl. Phys. Lett. 84 3013
[24]	Zhang F L, Gadisa A, Inganas O, Svensson M, Andersson M R 2004 Appl. Phys. Lett. 84 3906
[25]
[26]	Kim J Y, Jung J H, Lee D E, Joo J 2002 Synth. Metal. 126 311
[27]
[28]
[29]	Snait H J, Kenrick H, Chiesa M, Friend R H 2005 Polymer 46 2573
[30]
[31]	Huang J, Miller P F, Wilson J S, de Mello A J, de Mello J C, Bradley D D C 2005 Adv. Funct. Mater. 15 290
[32]
[33]	Crispin X, Jakobsson F L E, Crispin A, Grim P C M, Andersson P, Volodin A, van Haesendonck C, van der Auweraer M, Salaneck W R, Berggren M 2006 Chem. Mater. 18 4354
[34]
[35]	Wang T J, Qi Y Q, Xu J K, Hu X J, Chen P 2005 Appl. Surf. Sci. 250 188
[36]
[37]	Ko C J, Lin Y K, Chen F C, Chu C W 2007 Appl. Phys. Lett. 90 063509
[38]	Braun D, Heeger A J 1991 J. Electron. Mater. 20 945
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[40]
[41]	Huang Y F, Inigo A R, Chang C C, Li K C, Liang C F, Chang C W, Lim T S, Chen S H, White J D, Jeng U S, Su A C, Huang Y S, Peng K Y, Chen S A, Pai W W, Lin C H, Tameev A R, Novikov S V, Vannikov A V, Fann W S 2007 Adv. Funct. Mater. 17 2902
[42]	Mihailetchi V D, Xie H, de Bore B, L Koster J A, Blom P W M 2006 Adv. Funct. Mater. 19 699
[43]

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