Ag/Nd0.7Sr0.3MnO3陶瓷界面电输运性质研究

陈顺生; 黄昌; 王瑞龙; 杨昌平; 孙志刚

doi:10.7498/aps.60.037304

摘要

用渗银和银胶接触两种方法分别在多晶Nd0.7Sr0.3MnO3陶瓷样品上制作电极,用两线和四线模式对两种接触界面的直、交流特性进行测量.结果发现:渗银电极与陶瓷样品之间具有很好的欧姆接触特性,两线、四线模式下的电阻测量值相近,并且没有电脉冲诱导电阻转变(EPIR)效应;而用银胶接触作电极时,V-I曲线表现出关于原点对称的非线性特征,并出现稳定的室温EPIR效应.两种不同方法制备的电极在交流电场下的输运也有很大差异:渗银电极阻抗

关键词:

Abstract

The transport properties of interface between metal electrode and Nd0.7Sr0.3MnO3 bulk have been investigated under 2-wire measuring mode using permeating Ag and Ag-glue contact, respectively. The results show that, for the permeating Ag contact, the measured results are similar to that of 4-wire measurement, and an ohmic character is obtained without EPIR effect. However, a strongly nonlinear V-I curve appears and exhibits a stable EPIR effect for the Ag-glue contact. Besides, It also shows remarkable difference when loaded with alternating current for the two different kinds of contacts. For the former, the real part of impedance R' increases with increasing frequency which is attributable to the skin effect; for the latter, however, the R' is of about megohm order of magnitude and the R' peak decreases with increasing frequency. Moreover, the R' peak splits into two peaks which respectively move to high and low temperature when further increasing the frequency. In combination with the data of scanning electron microscopy, the differences of electrical transport are discussed.

Keywords:

作者及机构信息

(1)湖北大学物理学与电子技术学院,铁电压电材料与器件湖北省重点实验室,武汉 430062; (2)武汉理工大学,材料复合新技术国家重点实验室,武汉 430070

基金项目: 国家自然科学基金(批准号: 10774040, 10911120055/A0402)和教育部新世纪人才基金 (批准号: NCET-08-0674)资助的课题.

Authors and contacts

(1)State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China; (2)The Provincial Key Laboratory of Piezoelectric Ceramics Materials and Apparatus, Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, China

参考文献

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施引文献

[1]	Rüggeberg F, Klein A 2006 Appl. Phys. A 82 281
[2]	7971
[3]	Nakasaka T, Urago K, Sugiura M, Kobayashi T 2001 Jpn. J. Appl. Phys. (Part 2) 40 L518
[4]	P217 (in Chinese) [刘恩科、朱秉升、罗晋生 2008 半导体物理学(第7版)(北京:电子工业出版社) 第217页]
[5]	Liu G L, Yang Z H, Fang G L 2009 Acta Phys. Sin. 58 3364 (in Chinese) [刘贵立、杨忠华、方戈亮 2009 58 3364]
[6]	Li Y B, Liu X, Li Z H, Fu Y, A. S. Kamzin, Wei F L, Yang Z 2009 Acta Phys. Sin. 58 7972 (in Chinese) [李彦波、刘曦、李正华、付煜、阿·谢·卡姆津、魏福林、杨正 2009 58 7972]
[7]	Wang C, Wang C Y 2009 Chin. Phys. B 18 3928
[8]	Klein A, Suberlich F, Spth B, Schulmeyer T, Kraft D 2007 J. Mater. Sci. 42 1890
[9]	Tiefenbacher S, Pettenkofer C, Jaegermann W 2002 J. Appl. Phys. 91 1984
[10]	Van de Krol R, Tuller H L 2002 Solid State Ionics 150 167
[11]	Krber C, Harvey S P, Mason T O, Klein A 2008 Surf. Sci. 602 3246
[12]	Gassenbauer Y, Wachau A, Klein A 2009 Phys. Chem. Chem. Phys. 11 3049
[13]	Maier J 2009 Phys. Chem. Chem. Phys. 11 3011
[14]	Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304
[15]	Andreasson B P, Janousch M, Staub U, Meijer G I, Delley B 2007 Mater. Sci. Eng. B 144 60
[16]	Gross R, Alff L, Büchner B, Freitag B H, Hüfener C, Klein J, Lu Y F, Mader W, Philipp J B, Rao M S R, Reutler P, Ritter S, Thienhaus S, Uhlenbruck S, Wiedenhorst B 2000 J. Magn. Magn. Mater. 211 150
[17]	Hwang H, Cheong S W, Ong N P, Batlogg B 1996 Phys. Rev. Lett. 77 2041
[18]	Gupta A, Gong G Q, Xiao G, Duncombe P R, Lecoeur P, Trouilloud P, Wang Y Y, Dravid V P, Sun J Z 1996 Phys. Rev. B 54 R15629
[19]	Mathur N D, Burnell G, Isaac S P, Jackson T J, Teo B S, MacManus-Driscoll J L, Cohen L F, Evetts J E, Blamire M G 1997 Nature 387 266
[20]	Maurice J L, Devos I, Casanove M J, Carrétéro C, Gachet G, Herranz G, Crété D G, Imhoff D, Barthélémy A, Bibes M, Bouzehouane K, Deranlot C, Fusil S, Jacquet é, Domengès B, Ballutaud D 2007 Mater. Sci. Eng. B 144 1
[21]	Yang C P, Chen S S, Dai Q, Guo D H, Wang H 2007 Acta Phys. Sin. 56 4908 (in Chinese) [杨昌平、陈顺生、戴琪、郭定和、王浩 2007 56 4908]
[22]	Liu S Q, Wu N J, Ignatiev A 2000 Appl. Phys. Lett. 76 2749
[23]	Xie Y W, Sun J R, Wang D J, Liang S, Shen B G 2006 J. Appl. Phys. 100 033704
[24]	Oka T, Nagaosa N 2005 Phys. Rev. Lett. 95 266403
[25]	Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 975
[26]	Sawa A, Fujii T, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 85 4073
[27]	Li Q, Wang Z G, Liu S, Xing Z W, Liu M 2007 Acta Phys. Sin. 56 1637 (in Chinese) [李倩、王之国、刘甦、邢钟文、刘楣 2007 56 1637]
[28]	Chen S S, Yang C P, Xu L F, Yang F J, Wang H B, Wang H, Xiong L B, Yu Y, Medvedeva I V, Brner K 2010 Solid State Commun. 150 240
[29]	Liu L P, Zhao Z J, Liu S, Huang C X, Wu Z M, Yang X L 2006 Acta Phys. Sin. 55 2014 (in Chinese) [刘龙平、赵振杰、黄灿星、吴志明、杨燮龙 2006 55 2014]
[30]	Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (the 7th edition)(Bei jing:Publishing House of Electronics Industry)
[31]	Reagor D W, Lee S Y, Li Y, Jia Q X 2004 J. Appl. Phys. 95
[32]	Shang D S, Wang Q, Chen L D, Dong R, Li X M, Zhang W Q 2006 Phys. Rev. B 73 245427

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