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通过异质结界面分析与 AMPS 模拟计算研究了 a-Si:H/c-Si 异质结太阳电池在低温工作、a-Si:H 层低掺杂、高价带补偿以及高界面态时光态 J-V 曲线出现 S-Shape 现象的物理过程,总结了 S-Shape 现象的物理原因.分析结果表明,当空穴输运受到界面势垒的限制时,空穴在 c-Si 界面附近聚集,能带重新分配,c-Si 耗尽区的电场减小,更多的电子从 c-Si 准中性区反转至 c-Si 界面及耗尽区与空穴复合,复合速率显著增大,光电流的损失显著增大,光态 J-V<
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关键词:
- 模拟 /
- 异质结太阳电池 /
- a-Si:H/c-Si 异质结
In this paper the physical mechanism of the S-shaped J-V characteristics of (p) a-Si:H/(n) c-Si heterojunction solar cell at low working temperatures, low impurity concentrations in the a-Si:H layer, high valence band offsets or high interface defect densities is studied by heterojunction interface analysis and AMPS simulations. The results show that the barrier at the amorphous/crystalline interface hinders the collection of photogenerated holes. A high hole accumulation at the interface, in combination, causes a shift of the depletion region from the c-Si into the a-Si:H. This leads to the electric field decreasing, and the enhanced recombination inside the c-Si depletion region causes a significant current loss. It results in the S-shaped J-V characteristics.-
Keywords:
- simulation /
- solar cell /
- a-Si:H/c-Si heterojunction
[1] Tsunomura Y, Yoshimine Y, Taguchi M, Baba T, Kinoshita T, Kanno H, Sakata H, Maruyama E, Tanaka M 2008 Sol. Energy Mater. So . Cells doi:l0.l016/j.solmat. 2008.02.037
[2] Froitzheim A, Brendel K, Elstner L, Fuhs W, Kliefoth K, Schmidt M 2001 Thin Solid Films 383 314
[3] Van Cleef M W M, Rath J K, Rubinelli F A, Van der Werf C H M, Schropp R E I, Van der Weg W F 1997 J. Appl. Phys. 82 6089
[4] Datta A, Damon-Lacoste J, Nath M, Cabarrocas P R, Chatterjee P 2008 Mater. Sci. Eng. B doi:l0.l016 /j.mseb. 2008.10.017
[5] Datta A, Damon-Lacoste J, Cabarrocas P R, Chatterjee P 2008 Sol. Energy Mater. Sol. Cells 92 1500
[6] Froitzheim A,Brendel K, Elstner L, Fuhs W, Kliefoth K, Schmidt M 2002 J. Non-Cryst. Solids 299-302 663
[7] Gudovskikh A S, Kleider J E, Froitzheim A, Fuhs W, Terukov E I 2004 Thin Solid Films 451-452 345
[8] Van Cleef M W M, Schropp R E, Rubinelli F A 1998 Appl. Phys. Lett. 73 2609
[9] Van Cleef M W M, Rubinelli F A, Rath J K, Schropp R E I, Van der Weg W F, Rizzoli R, Summonte C, Pingini R 1998 J. Non-Cryst. Solids 227-230 1291
[10] Van Cleef M W M, Rubinelli F A, Rizzoli R, Pingini R, Schropp R E I, Van der Weg W F 1998 Jpn. J. Appl. Phys. 37 3926
[11] Hu Z H, Liao X B, Diao H W, Xia C F, Xu L, Zeng X B, Hao H Y, Kong G L 2005 Acta Phys. Sin. 54 2302 (in Chinese) [胡志华、廖显伯、刁宏伟、夏朝凤、许 玲、曾湘波、郝会颖、孔光临 2005 54 2302 ]
[12] For AMPS-1D please see :http ://www. emprl . psu. Edu/amps.
[13] Hu Z H, Liao X B, Xu Y Y, Zhang S B, Diao H W, Kong G L 2003 Acta Phys. Sin. 52 2302 (in Chinese) [胡志华、廖显伯、曾湘波、徐艳月、张世斌、刁宏伟、孔光临 2003 52 217]
[14] Zhao L, Zhou C L, Li H L, Diao H W, Wang W J 2008 Acta Phys. Sin. 57 3212 (in Chinese) [赵 雷、周春兰、李海玲、刁宏伟、王文静 2008 57 3212]
[15] Rubinelli F A 1992 IEEE Trans. Electron Devices 39 2584
[16] Ley L 1989 J. Non-Cryst. Solids 114 238
[17] Sebastiani M, Gaspare D L, Capellini G, Bittencourt C, Evangelisti F 1995 Phys. Rev. Lett. 75 3352
[18] Matsuura H, Okuno T, Okushi H, Tanaka K 1984 J. Appl. Phys. 55 1012
[19] Mimuraand H, Hatanaka Y 1987 Appl. Phys. Lett. 50 326
[20] Eschrich H, Bruns J, Elstner L, Swiatkowski C 1993 J. Non-Cryst. Solids 164-166 717
[21] Gudovskikh A S, Ibrahim S, Kleider J P, Damon-Lacoste J, Cabarrocas P R, Veschetti Y, Ribeyron P J 2007 Thin Solid Films 515 7481
[22] Gandia J J, Carabe J, Gonzalez N, Torres I, Munoz D, Voz C 2009 Sol. Energy Mater. Sol. Cells doi:10.1016/ j.solmat.2009.09.017
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[1] Tsunomura Y, Yoshimine Y, Taguchi M, Baba T, Kinoshita T, Kanno H, Sakata H, Maruyama E, Tanaka M 2008 Sol. Energy Mater. So . Cells doi:l0.l016/j.solmat. 2008.02.037
[2] Froitzheim A, Brendel K, Elstner L, Fuhs W, Kliefoth K, Schmidt M 2001 Thin Solid Films 383 314
[3] Van Cleef M W M, Rath J K, Rubinelli F A, Van der Werf C H M, Schropp R E I, Van der Weg W F 1997 J. Appl. Phys. 82 6089
[4] Datta A, Damon-Lacoste J, Nath M, Cabarrocas P R, Chatterjee P 2008 Mater. Sci. Eng. B doi:l0.l016 /j.mseb. 2008.10.017
[5] Datta A, Damon-Lacoste J, Cabarrocas P R, Chatterjee P 2008 Sol. Energy Mater. Sol. Cells 92 1500
[6] Froitzheim A,Brendel K, Elstner L, Fuhs W, Kliefoth K, Schmidt M 2002 J. Non-Cryst. Solids 299-302 663
[7] Gudovskikh A S, Kleider J E, Froitzheim A, Fuhs W, Terukov E I 2004 Thin Solid Films 451-452 345
[8] Van Cleef M W M, Schropp R E, Rubinelli F A 1998 Appl. Phys. Lett. 73 2609
[9] Van Cleef M W M, Rubinelli F A, Rath J K, Schropp R E I, Van der Weg W F, Rizzoli R, Summonte C, Pingini R 1998 J. Non-Cryst. Solids 227-230 1291
[10] Van Cleef M W M, Rubinelli F A, Rizzoli R, Pingini R, Schropp R E I, Van der Weg W F 1998 Jpn. J. Appl. Phys. 37 3926
[11] Hu Z H, Liao X B, Diao H W, Xia C F, Xu L, Zeng X B, Hao H Y, Kong G L 2005 Acta Phys. Sin. 54 2302 (in Chinese) [胡志华、廖显伯、刁宏伟、夏朝凤、许 玲、曾湘波、郝会颖、孔光临 2005 54 2302 ]
[12] For AMPS-1D please see :http ://www. emprl . psu. Edu/amps.
[13] Hu Z H, Liao X B, Xu Y Y, Zhang S B, Diao H W, Kong G L 2003 Acta Phys. Sin. 52 2302 (in Chinese) [胡志华、廖显伯、曾湘波、徐艳月、张世斌、刁宏伟、孔光临 2003 52 217]
[14] Zhao L, Zhou C L, Li H L, Diao H W, Wang W J 2008 Acta Phys. Sin. 57 3212 (in Chinese) [赵 雷、周春兰、李海玲、刁宏伟、王文静 2008 57 3212]
[15] Rubinelli F A 1992 IEEE Trans. Electron Devices 39 2584
[16] Ley L 1989 J. Non-Cryst. Solids 114 238
[17] Sebastiani M, Gaspare D L, Capellini G, Bittencourt C, Evangelisti F 1995 Phys. Rev. Lett. 75 3352
[18] Matsuura H, Okuno T, Okushi H, Tanaka K 1984 J. Appl. Phys. 55 1012
[19] Mimuraand H, Hatanaka Y 1987 Appl. Phys. Lett. 50 326
[20] Eschrich H, Bruns J, Elstner L, Swiatkowski C 1993 J. Non-Cryst. Solids 164-166 717
[21] Gudovskikh A S, Ibrahim S, Kleider J P, Damon-Lacoste J, Cabarrocas P R, Veschetti Y, Ribeyron P J 2007 Thin Solid Films 515 7481
[22] Gandia J J, Carabe J, Gonzalez N, Torres I, Munoz D, Voz C 2009 Sol. Energy Mater. Sol. Cells doi:10.1016/ j.solmat.2009.09.017
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