AlGaN/GaN HEMT器件电流坍塌和膝点电压漂移机理的研究

王林; 胡伟达; 陈效双; 陆卫

doi:10.7498/aps.59.5730

摘要

考虑了势垒层、缓冲层体陷阱及表面电荷的浓度变化对电流坍塌和膝点电压的影响,发现表面电荷和势垒层体陷阱浓度的变化对沟道电子的浓度影响较小,表面电荷浓度变化下的膝点电压的偏移和坍塌强度的大小与势垒层势阱能量的变化有着主要的关系.缓冲层有着比势垒层更强的局域作用,势垒层和缓冲层的体陷阱浓度在一定范围变化时的膝点电压偏移主要是由沟道电子浓度的变化而引起的,但偏移量却比表面电荷浓度变化的情况下小很多.势阱能量的变化是造成膝点电压偏移的重要原因,坍塌强度主要取决于势阱能量和沟道的电子浓度.

关键词:

Abstract

In this article, we comprehensively showed the impact of barrier layer traps, buffer layer traps and surface charge on current collapse and knee voltage change, pointed out that the change in the concentration of surface charge and barrier layer traps have little influence on the 2DEG density in the channel.When the concentration of surface charge changes, the knee voltage drift and strength of current collapse are in close connection with the change of potential energy in quantum well.Buffer layer has stronger local effect than barrier layer, when the concentration of bulk traps change in these layers, knee voltage drift is mainly caused by the change of 2DEG density, but has less change compared with the situation of surface charge.Potential energy changes in the quantum well is an important reason for the change of knee voltage, the strength of current collapse is determined by the size of potential energy and 2DEG density.

Keywords:

作者及机构信息

1.
中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083

基金项目: 国家自然科学基金(批准号: 10747162),上海应用材料研究与发展基金(批准号: 08520740600), 中国科学院上海技术物理研究所创新专项(批准号: Q-ZY-7, Q-ZY-4)资助的课题.

Authors and contacts

1.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China

参考文献

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[16]	Yu L S, Ying Q J, Qiao D, Lau S S, Boutros K S, Redwing J M 1998 Appl. Phys. Lett. 73 26
[17]	Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S, Storm D F 2003 Appl. Phys. Lett. 83 1650
[18]	Device simulator Sentaurus Device 2009 (formerly ISE-DESSIS), version Z-2009.3, Synopsys Inc., p15, 197
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施引文献

[1]	Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, AsifKhan M, Simin G 2004 J. Appl. Phys. 95 6409
[2]	Chinese) [冯倩、郝跃、岳远征 2008 57 1886]
[3]	Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502.
[4]	[席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维、韩彦军、罗毅 2008 57 7238]
[5]	(Suzhou : Suzhou University Press) p53 (in Chinese) [施敏 2008 半导体器件物理与工艺 (苏州: 苏州大学出版社) 第53页]
[6]	Hu W D, Chen X S, Quan Z J, Zhang X M, Huang Y, Xia C S, Lu W, Ye P D 2007 J. Appl. Phys. 102 034502
[7]	Knap W, Kachorovskii V, Deng Y, Rumyantsev S, Gaska R 2002 J. Appl. Phys. 91 9346
[8]	Hu W D, Chen X S, Quan Z J, Xia C S, Lu W, Ye P D 2006 Appl. Phys. Lett. 100 074501
[9]	Brag N, Mickevicius R, Gaska R, Shur M S, Asif K M, Simin G 2004 Appl. Phys. Lett. 85 4780
[10]	Vetury R, Naiqain Zhang Q, Stacia Keller, Mishra K U 2001 IEEE Trans. Electron Devices 48 560
[11]	Wei W, Lin R B, Feng Q, HaoY 2008 Acta. Phys. Sin. 57 467 (in Chinese) [魏巍、林若兵、冯倩、郝跃 2008 57 467]
[12]	Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta. Phys. Sin. 57 7238 (in Chinese)
[13]	Kong Y C, Zheng Y D, Zhou C H, Deng Y Z, Gu S L, Shen B, Zhang R, Han P, Jiang R L, Shi Y 2004 Acta. Phys. Sin. 53 2320 (in Chinese) [孔月婵、郑有窦、周春红、邓永桢、顾书林、沈波、张荣、韩平、江若琏、施毅 2004 53 2320]
[14]	Bykhovski A D, Gaska R, Shur M S 1998 Appl. Phys. Lett. 73 24
[15]	Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta. Phys. Sin. 58 536 (in Chinese) [刘林杰、岳远征、张进城、马晓华、董作典、郝跃 2009 58 536]
[16]	Yu L S, Ying Q J, Qiao D, Lau S S, Boutros K S, Redwing J M 1998 Appl. Phys. Lett. 73 26
[17]	Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S, Storm D F 2003 Appl. Phys. Lett. 83 1650
[18]	Device simulator Sentaurus Device 2009 (formerly ISE-DESSIS), version Z-2009.3, Synopsys Inc., p15, 197
[19]	Sze M S 2008 Semiconductor Devices Physics and Technology
[20]	Feng Q, Hao Y, Yue Y Z 2008 Acta. Phys. Sin. 57 1886 (in
[21]	Zeng S R 2007 Semiconductor Devices Physics (Beijing : Peking University Press) p137 (in Chinese) [曾树荣 2007 半导体器件物理基础 (北京: 北京大学出版社) 第137页]

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