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基于共振耦合腔理论, 提出并设计了基于亚波长光栅耦合腔的795 nm垂直腔面发射激光器((vertical cavity surface emitting laser, VCSEL), 利用COMSOL软件有限元方法对多光腔耦合线宽压窄机制和影响因素进行了详细分析, 研究发现, 当光子在多耦合腔中进行谐振时, 通过合理设计光栅耦合腔参数, 精确调控激光器多耦合腔相位匹配, 极大地促进了光谱线宽共振压窄效应, 并最终获得了高光束质量795 nm VCSEL激光器的超窄线宽输出. 理论结果表明, 当耦合腔间隔层厚度为180 nm时, 反射光谱冷腔线宽Δλc可以达到7 pm, 为实现VCSEL激光器kHz量级光谱线宽输出奠定了理论基础.In this paper, the 795-nm vertical cavity surface emitting laser (VCSEL) with sub-wavelength grating coupled cavity is proposed and designed based on the theory of resonant coupled cavity, and the mechanism of multi-cavity coupling linewidth narrowing and influencing factors are analyzed in detail by using the COMSOL software finite element method. The analysis results show that when photonic resonance takes place in a multi-coupled cavity, the grating-coupled cavity with reasonable design parameters and the multi-coupled cavity formed by precisely controlled lasers are phase-matched, which greatly strengthens the narrowing effect of the spectral linewidth resonance, and a 795-nm VCSEL laser with high beam quality and ultra-narrow linewidth output is obtained, finally. Theoretical results display that the reflection spectrum cold cavity linewidth Δλc of the coupling cavity with a thickness of 180nm of the spacer layer can reach 7 pm, which lays a theoretical foundation for achieving a kHz-level spectral linewidth output of VCSEL lasers.
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Keywords:
- resonant coupled cavity /
- vertical cavity surface emitting laser /
- ultra-narrow linewidth /
- subwavelength grating
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图 1 亚波长光栅耦合腔VCSEL激光器结构示意图
Fig. 1. Schematic diagram of subwavelength grating coupled cavity VCSEL laser structure.
图 2 光栅结构参数对共振谱线的影响 (a)改变光栅周期; (b)改变间隔层厚度
Fig. 2. The influence of grating structure parameters on the resonance spectrum: (a) Change the grating period; (b) change the thickness of the spacer layer.
图 3 (a), (b)两个谐振腔相互耦合的变化过程, 限制层厚度与光栅周期调节使其相互耦合; (c), (d)相互耦合完成之后, 不同间隔层厚度亚波长光栅VCSEL有源区与光栅耦合腔的谐振电场分布
Fig. 3. (a) and (b) The variation process of the mutual coupling of the two resonant cavities, limiting the layer thickness and adjusting the grating period to make them coupled; (c) and (d) after the mutual coupling is completed, the subwavelength grating VCSEL with different spacing layer thickness is active Resonant electric field distribution of coupling cavity between zone and grating
图 4 间隔层厚度不同时, 基于导模共振耦合腔的VCSEL的冷腔反射谱的半高全宽与光场分布图 (a) db=60 nm; (b) db=120 nm; (c) db=150 nm; (d) db=180 nm
Fig. 4. Full width at half maximum and optical field distribution of cold cavity reflection spectrum of VCSEL based on guided mode resonant coupled cavity when the thickness of the spacer layer is different: (a) db=60 nm; (b) db=120 nm; (c) db=150 nm; (d) db=180 nm.
图 5 光栅耦合腔VCSEL品质因子Q与间隔层厚度变化关系
Fig. 5. The relationship between the quality factor Q of the grating coupled cavity VCSEL and the thickness of the spacer layer.
图 6 光栅耦合腔VCSEL输出线宽与光功率关系
Fig. 6. The relationship between the output line width of the grating coupled cavity VCSEL and the optical power.
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[1] Boletti A, Boffi P, Martelli P, Ferrario M, Martinelli M 2015 Opt. Express 23 1806
Google Scholar
[2] Ghiasi A 2015 Opt. Express 23 2085
Google Scholar
[3] Nakahama M, Sakaguchi T, Matsutani A, Koyama F 2014 Appl. Phys. Lett. 105 091110
Google Scholar
[4] Liu A J, Wolf P, Lott J A, Bimberg D 2019 Photonics Res. 7 121
Google Scholar
[5] Li M J, Li K M, Chen X, Snigdharaj K M, Adrian A J, Jason E H, Jeffery S S 2021 J. Lightwave Technol. 39 868
Google Scholar
[6] Chen B, Claus D, Russ D, Nizami R 2020 Opt. Lett. 45 5583
Google Scholar
[7] Schwindt P D, Lindseth B J, Shah V, Knappe S, Kitching J 2008 Conference on Lasers and Electro-Optics San Jose, United States of America, May 4−9, 2008 p1
[8] Serkland D K, Geib K M, Peake G M, Lutwak R, Rashed A, Varghese M, Tepolt G, Prouty M Vertical-cavity Surface-emitting Lasers XI San Jose, February 12–13, 2007 p648406
[9] Khan N A, Mahmood T 2020 J. Mod. Optic. 67 1334
Google Scholar
[10] Paul S, Haidar M T, Cesar J, Malekizandi M, Kögel B, Neumeyr C, Ortsiefer M, Küppers F 2016 Opt. Express 24 13142
Google Scholar
[11] Jiang L D, Shi L L, Luo J, Gao Q R, Lan T Y, Huang L G, Zhu T 2021 Opt. Lett. 46 2320
Google Scholar
[12] Schawlow A L, Townes C H 1940 Phys Rev. 112 1940
Google Scholar
[13] Henry C H 2015 IEEE J. Quantum. Elect. 18 259
[14] Moller B, Zeeb E, Fiedler U, Hackbarth T, Ebeling K 1994 IEEE Photonic Tech. L. 6 921
Google Scholar
[15] Serkland D K, Keeler G A, Geib K M, Peake G M 2009 Proc. Spie. 7229 8
Google Scholar
[16] Ouvrard A, Garnache A, Cerutti L, Genty F, Romanini D 2005 IEEE Photonic Tech. L. 17 2020
Google Scholar
[17] Mizunami T, Kojima S, Kudo T 2006 The International Society for Optical Engineering Gwangju, Korea, September 5, 2006 p6351
[18] Hessel A, Oliner A A 1965 Appl. Opt. 4 1275
Google Scholar
[19] Ura S, Kintaka K, Inoue J, Ogura T, Awatsuji Y Electronic Components and Technology Conference IEEE Las Vegas, United States of America, May 28−31, 2013 p1874
[20] Aspelmeyer M, Kippenberg T J, Marquardt F 2014 Florian. Rev. Mod. 86 1391
Google Scholar
[21] Theisen M J, Brown T G 2015 J. Mod. Optic. 62 244
Google Scholar
[22] Vartiainen I, Tervo J, Kuittinen M 2009 Opt. Lett. 34 1648
Google Scholar
[23] Inoue J, Ogura T, Kondo T, Kintaka K, Nishio K, Awatsuji Y 2014 Opt. Lett. 39 1893
Google Scholar
[24] Haglund Erik, Jahed Mehdi, Gustaysson Johan S, Larsson A, O'Brien P 2019 Opt. Lett. 27 18892
Google Scholar
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