45 nm宽带可连续调谐半导体薄片激光器

毛琳; 张晓健; 李春玲; 朱仁江; 汪丽杰; 宋晏蓉; 王涛; 张鹏

doi:10.7498/aps.70.20210888

摘要

本文报道了一种宽带可连续调谐的半导体薄片激光器. 增益芯片的有源区由满足谐振周期增益结构的InGaAs多量子阱构成, 其荧光峰值波长位于965 nm附近. 利用增益芯片量子阱的宽带特性, 结合由高反射率外腔镜所构成的直线谐振腔, 可保障激光器较低的损耗和较宽的调谐范围. 在腔内插入不同厚度的双折射滤波片, 可获得连续可调谐的激光波长输出. 当双折射滤波片厚度为2 mm时, 激光器的波长调谐范围为45 nm, 最大输出功率为122 mW, X和Y方向的光束质量M²因子分别为1.00和1.02. 文章还对增益芯片面发射谱的温度特性和双折射滤波片对激光线宽的压窄作用进行了讨论.

关键词:

Abstract

A broadband continuously tunable semiconductor disk laser is reported in this paper. The active region of gain chip is composed of InGaAs multiple quantum wells with resonant periodic gain structure, and its fluorescence peak wavelength is around 965 nm. Using the wideband characteristics of the quantum wells in gain chip, along with the simple linear cavity that is formed by a high reflectivity external mirror, the laser has a low cavity loss and a wide tuning range. The continuously tunable laser wavelength can be obtained by inserting birefringent filters with different thickness into the cavity. When the thickness of the birefringent filter is 2 mm, the wavelength tuning range of the laser is 45 nm, the maximum output power is 122 mW, and the beam quality M² factors in the X- and the Y-directions are 1.00 and 1.02, respectively. The temperature characteristics of the surface-emitting spectra of gain chip and the narrowing effect of birefringent filter on laser linewidth h are also discussed.

Keywords:

作者及机构信息

1.
重庆师范大学物理与电子工程学院, 重庆　401331

2.
中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室, 长春　130033

3.
北京工业大学应用数理学院, 北京　100124

通信作者: 王涛, wangt@cqnu.edu.cn ; 张鹏, zhangpeng2010@cqnu.edu.cn

基金项目: 国家自然科学基金(批准号: 61904024)、重庆市教委科学技术研究重大项目(批准号: KJZD-M201900502)、重庆市基础研究与前沿探索项目(批准号: cstc2018jcyjAX0319)、教育部 "蓝火计划"(惠州)产学研联合创新基金(批准号: CXZJHZ201728)、发光学与应用国家重点实验室开放项目(批准号: SKLA-2019-04)、重庆市教委科学技术研究项目(批准号: KJQN201800528)资助的课题

Authors and contacts

1.
College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China

2.
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

3.
College of Applied Sciences, Beijing University of Technology, Beijing 100124, China

Corresponding author: Wang Tao, wangt@cqnu.edu.cn ; Zhang Peng, zhangpeng2010@cqnu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61904024), the Science and Technology Research Program of Chongqing Municipal Education Commission, China (Grant No. KJZD-M201900502), the Chongqing Research Program of Basic Research and Frontier Technology, China (Grant No. cstc2018jcyjAX0319), the “Blue Fire Plan” (Huizhou) Foundation of Industry University Research Joint Innovation of Ministry of Education, China (Grant No. CXZJHZ201728), the State Key Laboratory of Luminescence and Applications, China (Grant No. SKLA-2019-04), and the Scientific and Technological Research Program of Chongqing Municipal Education Commission, China (Grant No. KJQN201800528).

文章全文 : translate this paragraph

参考文献

[1]	Lu B, Wei F, Zhang Z, Xu D, Pan Z Q, Chen D J, Cai H W 2015 Chin. Opt. Lett. 13 091402 Google Scholar
[2]	Farrell T, McDonald D 2004 Proc. SPIE 5594 66 Google Scholar
[3]	Rothe K W, Brinkmann U, Walther H 1974 Appl. Phys. 10 678 Google Scholar
[4]	Soldatov A N, Reimer I V, Evtushenko V A, Melnikov K Yu, Malikov A V 2010 B. Lebedev Phys. Inst. 37 4 Google Scholar
[5]	Bhatia P S, Keto J W 1996 Appl. Opt. 35 4152 Google Scholar
[6]	Kuehne A J C, Gather M C 2016 Chem. Rev. 116 12823 Google Scholar
[7]	Fan T Y, Byer R L 1988 IEEE J. Quantum Electron. 24 895 Google Scholar
[8]	Byer R L 1988 Science 239 742 Google Scholar
[9]	Huber G, Kränkel C, Petermann K 2010 JOSA B 27 B93 Google Scholar
[10]	Coldren L A, Fish G A, Akulova Y, Barton J S, Colder C W 2004 J. Lightwave Technol. 22 193 Google Scholar
[11]	郝秀晴, 陈根祥 2010 光通信技术 34 4 Google Scholar Hao X Q, Chen G X 2010 Opt. Commun. Technol. 34 4 Google Scholar
[12]	Guina M, Rantamäki A, Härkönen A 2017 J. Phys. Appl. Phys. 50 383001 Google Scholar
[13]	Rudin B, Rutz A, Hoffmann M, Maas D J H C, Bellancourt A R, Gini E, Südmeyer T, Keller U 2008 Opt. Lett. 33 2719 Google Scholar
[14]	Heinen B, Wang T L, Sparenberg M, Weber A, Kunert B, Hader J, Koch S W, Moloney J V, Koch M, Stolz W 2012 Electron. Lett. 48 516 Google Scholar
[15]	Hou G Y, Shu S L, Feng J, Popp A, Schmidt B, Lu H Y, Wang L J, Tian S C, Tong C Z, Wang L J 2019 IEEE Photonics J. 11 1 Google Scholar
[16]	Fedorova K A, Guoyu H, Wichmann M, Kriso C, Zhang F, Stolz W, Schellrt M, Koch M, Rahimi-lman A 2020 Phys. Status Solidi-R 14 2000204 Google Scholar
[17]	Li F, Mahmoud F, James T, Robert B, Yunshi K, Aramais Z, Jorg H, Jerome V, Wolfgang S, Stephan W 2006 Appl. Phys. Lett. 88 21105 Google Scholar
[18]	Li F, Fallahi M, Zakharian A R, Hader J, Koch SW 2007 IEEE Photonic. Tech. L. 19 544 Google Scholar
[19]	Borgentun C, Bengtsson J, Larsson A, Demaria F, Hein A, Unger P 2010 IEEE Photonic. Tech. L. 22 978 Google Scholar
[20]	Butkus M, Rautiainen J, Okhotnikov O G, Hamilton C J, Malcolm G P A, Mikhrin S S, Krestnikov I L, Livshits D A, Rafailov E U 2011 IEEE J. Sel. Top. Quant. 17 1763 Google Scholar
[21]	Yang Z, Albrecht R A, Cederberg J G, Sheik-Bahae M 2016 Appl. Phys. Lett. 109 1063 Google Scholar
[22]	Artur B, Anna W J, Iwona S, Michal W, Marta W, Jan M 2017 IEEE PhotoN. Technol. Lett. 29 2215 Google Scholar
[23]	Zhang P, Song Y R, Zhang X P, Dai T L, Liang Y P, Fan S Q 2011 Opt. Rev. 18 317 Google Scholar
[24]	Mangold M, Wittwer V J, Sieber O D, Martin H, Igor L K, Daniil A L, Matthias G, Thomas S, Ursula K 2012 Opt. Express 20 4136 Google Scholar
[25]	Fan L, Hader J, Schillgalies M, Fallahi M, Zakharian A R, Moloney J V, Bedford R, Murrary J T, Koch S W, Stolz W 2005 IEEE Photonic Tech. L. 17 1764 Google Scholar
[26]	Sandusky J V, Brueck S R J 1996 IEEE Photonic Tech. L. 8 313 Google Scholar
[27]	王亚龙, 王庆, 李文静, 王雅兰 2018 光学技术 44 88 Wang Y L, Wang Q, Li W J, Wang Y L 2018 Opt. Tech. 44 88

施引文献

图 1 (a)增益芯片实物及(b)外延片结构示意图

Fig. 1. (a) Photograph and (b) epitaxial structure of the gain chip

下载: 全尺寸图片幻灯片

图 2 不同热沉温度下增益芯片的面发射PL谱

Fig. 2. Surface-emitting PL spectra of the gain chip under different heatsink temperatures.

下载: 全尺寸图片幻灯片

图 3 不同泵浦功率下增益芯片的面发射PL谱

Fig. 3. Surface-emitting PL spectra of the gain chip with different pump power.

下载: 全尺寸图片幻灯片

图 4 (a)宽带可调谐半导体薄片激光器结构示意图及(b)实物图

Fig. 4. (a) Schematics and (b)photograph of the broadband tunable semiconductor disk laser.

下载: 全尺寸图片幻灯片

图 5 自由运转下半导体薄片激光器的输出功率

Fig. 5. Output powers of the free-running semiconductor disk laser.

下载: 全尺寸图片幻灯片

图 6 最大输出功率为0.58 W时, 激光束的M²因子

Fig. 6. M² factor of the laser beam when the maximum output power is 0.58 W.

下载: 全尺寸图片幻灯片

图 7 使用2 mm厚度BRF的SDL的波长调谐特性. 图中同时画出了对应波长的输出功率和不同m值下BRF的调谐曲线

Fig. 7. Tuning characteristics of the SDL with 2 mm thickness BRF. The corresponding output powers at various wavelengths and the tuning curves of the BRF with different m values are also plotted.

下载: 全尺寸图片幻灯片

图 8 用4 mm厚度BRF作调谐元件的SDL的调谐特性

Fig. 8. Tuning characteristics of the SDL with 4 mm thickness BRF.

下载: 全尺寸图片幻灯片

图 9 用6 mm厚度BRF作调谐元件的SDL的调谐特性

Fig. 9. Tuning characteristics of the SDL with 6 mm thickness BRF.

下载: 全尺寸图片幻灯片

图 10 自由运转及插入不同厚度BRF时SDL的光谱线宽

Fig. 10. Laser spectra of the SDL under free-running and with different thickness BRF.

下载: 全尺寸图片幻灯片

map

[1]	Lu B, Wei F, Zhang Z, Xu D, Pan Z Q, Chen D J, Cai H W 2015 Chin. Opt. Lett. 13 091402 Google Scholar
[2]	Farrell T, McDonald D 2004 Proc. SPIE 5594 66 Google Scholar
[3]	Rothe K W, Brinkmann U, Walther H 1974 Appl. Phys. 10 678 Google Scholar
[4]	Soldatov A N, Reimer I V, Evtushenko V A, Melnikov K Yu, Malikov A V 2010 B. Lebedev Phys. Inst. 37 4 Google Scholar
[5]	Bhatia P S, Keto J W 1996 Appl. Opt. 35 4152 Google Scholar
[6]	Kuehne A J C, Gather M C 2016 Chem. Rev. 116 12823 Google Scholar
[7]	Fan T Y, Byer R L 1988 IEEE J. Quantum Electron. 24 895 Google Scholar
[8]	Byer R L 1988 Science 239 742 Google Scholar
[9]	Huber G, Kränkel C, Petermann K 2010 JOSA B 27 B93 Google Scholar
[10]	Coldren L A, Fish G A, Akulova Y, Barton J S, Colder C W 2004 J. Lightwave Technol. 22 193 Google Scholar
[11]	郝秀晴, 陈根祥 2010 光通信技术 34 4 Google Scholar Hao X Q, Chen G X 2010 Opt. Commun. Technol. 34 4 Google Scholar
[12]	Guina M, Rantamäki A, Härkönen A 2017 J. Phys. Appl. Phys. 50 383001 Google Scholar
[13]	Rudin B, Rutz A, Hoffmann M, Maas D J H C, Bellancourt A R, Gini E, Südmeyer T, Keller U 2008 Opt. Lett. 33 2719 Google Scholar
[14]	Heinen B, Wang T L, Sparenberg M, Weber A, Kunert B, Hader J, Koch S W, Moloney J V, Koch M, Stolz W 2012 Electron. Lett. 48 516 Google Scholar
[15]	Hou G Y, Shu S L, Feng J, Popp A, Schmidt B, Lu H Y, Wang L J, Tian S C, Tong C Z, Wang L J 2019 IEEE Photonics J. 11 1 Google Scholar
[16]	Fedorova K A, Guoyu H, Wichmann M, Kriso C, Zhang F, Stolz W, Schellrt M, Koch M, Rahimi-lman A 2020 Phys. Status Solidi-R 14 2000204 Google Scholar
[17]	Li F, Mahmoud F, James T, Robert B, Yunshi K, Aramais Z, Jorg H, Jerome V, Wolfgang S, Stephan W 2006 Appl. Phys. Lett. 88 21105 Google Scholar
[18]	Li F, Fallahi M, Zakharian A R, Hader J, Koch SW 2007 IEEE Photonic. Tech. L. 19 544 Google Scholar
[19]	Borgentun C, Bengtsson J, Larsson A, Demaria F, Hein A, Unger P 2010 IEEE Photonic. Tech. L. 22 978 Google Scholar
[20]	Butkus M, Rautiainen J, Okhotnikov O G, Hamilton C J, Malcolm G P A, Mikhrin S S, Krestnikov I L, Livshits D A, Rafailov E U 2011 IEEE J. Sel. Top. Quant. 17 1763 Google Scholar
[21]	Yang Z, Albrecht R A, Cederberg J G, Sheik-Bahae M 2016 Appl. Phys. Lett. 109 1063 Google Scholar
[22]	Artur B, Anna W J, Iwona S, Michal W, Marta W, Jan M 2017 IEEE PhotoN. Technol. Lett. 29 2215 Google Scholar
[23]	Zhang P, Song Y R, Zhang X P, Dai T L, Liang Y P, Fan S Q 2011 Opt. Rev. 18 317 Google Scholar
[24]	Mangold M, Wittwer V J, Sieber O D, Martin H, Igor L K, Daniil A L, Matthias G, Thomas S, Ursula K 2012 Opt. Express 20 4136 Google Scholar
[25]	Fan L, Hader J, Schillgalies M, Fallahi M, Zakharian A R, Moloney J V, Bedford R, Murrary J T, Koch S W, Stolz W 2005 IEEE Photonic Tech. L. 17 1764 Google Scholar
[26]	Sandusky J V, Brueck S R J 1996 IEEE Photonic Tech. L. 8 313 Google Scholar
[27]	王亚龙, 王庆, 李文静, 王雅兰 2018 光学技术 44 88 Wang Y L, Wang Q, Li W J, Wang Y L 2018 Opt. Tech. 44 88

[1]	杨家齐, 赵刚, 焦康, 高健, 闫晓娟, 赵延霆, 马维光, 贾锁堂. 基于光学反馈频率锁定的窄线宽稳定中红外激光产生技术研究. , 2024, 73(1): 014205. doi: 10.7498/aps.73.20231049
[2]	王涛, 彭雪芳, 贺亮, 沈小雨, 朱仁江, 蒋丽丹, 佟存柱, 宋晏蓉, 张鹏. 509 nm高功率宽调谐外腔面发射激光器. , 2024, 73(12): 124204. doi: 10.7498/aps.73.20240499
[3]	陶蒙蒙, 王亚民, 吴昊龙, 李国华, 王晟, 陶波, 叶景峰, 冯国斌, 叶锡生, 陈卫标. 基于宽带可调谐、窄线宽掺铥光纤激光器的2 μm波段水的超光谱吸收测量. , 2022, 71(11): 114203. doi: 10.7498/aps.71.20212127
[4]	丁永今, 曹士英, 林百科, 王强, 韩羿, 方占军. 基于电光晶体马赫-曾德干涉仪的载波包络偏移频率调节方法. , 2022, 71(14): 144203. doi: 10.7498/aps.71.20220147
[5]	沈晓红, 曾盈莹, 毛琳, 朱仁江, 王涛, 罗海军, 佟存柱, 汪丽杰, 宋晏蓉, 张鹏. 双波长自锁模半导体薄片激光器. , 2022, 71(20): 204202. doi: 10.7498/aps.71.20220483
[6]	张福领, 付丽珊, 胡丕丽, 韩文杰, 王宏卓, 张峰, 关宝璐. 795 nm亚波长光栅耦合腔垂直腔面发射激光器的超窄线宽特性. , 2021, 70(22): 224207. doi: 10.7498/aps.70.20210293
[7]	陶蒙蒙, 陶波, 叶景峰, 沈炎龙, 黄珂, 叶锡生, 赵军. 可调谐掺铥光纤激光器线宽压缩及其超光谱吸收应用. , 2020, 69(3): 034205. doi: 10.7498/aps.69.20191515
[8]	粟荣涛, 肖虎, 周朴, 王小林, 马阎星, 段磊, 吕品, 许晓军. 窄线宽脉冲光纤激光的自相位调制预补偿研究. , 2018, 67(16): 164201. doi: 10.7498/aps.67.20180486
[9]	刘雅坤, 王小林, 粟荣涛, 马鹏飞, 张汉伟, 周朴, 司磊. 相位调制信号对窄线宽光纤放大器线宽特性和受激布里渊散射阈值的影响. , 2017, 66(23): 234203. doi: 10.7498/aps.66.234203
[10]	刘江, 刘晨, 师红星, 王璞. 342W全光纤结构窄线宽连续掺铥光纤激光器. , 2016, 65(19): 194209. doi: 10.7498/aps.65.194209
[11]	焦东东, 高静, 刘杰, 邓雪, 许冠军, 陈玖朋, 董瑞芳, 刘涛, 张首刚. 用于光频传递的通信波段窄线宽激光器研制及应用. , 2015, 64(19): 190601. doi: 10.7498/aps.64.190601
[12]	李阳, 刘艳, 刘志波, 简水生. 基于增强瑞利反馈的单模窄线宽随机激光器. , 2015, 64(8): 084206. doi: 10.7498/aps.64.084206
[13]	侯磊, 韩海年, 张龙, 张金伟, 李德华, 魏志义. 243 nm稳频窄线宽半导体激光器. , 2015, 64(13): 134205. doi: 10.7498/aps.64.134205
[14]	高峰, 刘辉, 许朋, 王叶兵, 田晓, 常宏. 用于互组跃迁谱测量的窄线宽激光系统. , 2014, 63(14): 140704. doi: 10.7498/aps.63.140704
[15]	毛嵩, 吴正茂, 樊利, 杨海波, 赵茂戎, 夏光琼. 基于次谐波调制光注入半导体激光器获取窄线宽微波信号的实验研究. , 2014, 63(24): 244204. doi: 10.7498/aps.63.244204
[16]	张利明, 周寿桓, 赵鸿, 张昆, 郝金坪, 张大勇, 朱辰, 李尧, 王雄飞, 张浩彬. 780W全光纤窄线宽光纤激光器. , 2014, 63(13): 134205. doi: 10.7498/aps.63.134205
[17]	薛力芳, 张强, 李芳, 周燕, 刘育梁. 高频调制大功率窄线宽分布反馈光纤激光器. , 2011, 60(1): 014213. doi: 10.7498/aps.60.014213
[18]	牛生晓, 王云才, 贺虎成, 张明江. 光注入半导体激光器产生可调谐高频微波. , 2009, 58(10): 7241-7245. doi: 10.7498/aps.58.7241
[19]	孔令琴, 樊林林, 王安帮, 王云才. 相干长度可连续调谐的半导体激光器. , 2009, 58(11): 7680-7685. doi: 10.7498/aps.58.7680
[20]	王海波, 翟泽辉, 马艳, 王少凯, 郜江瑞, 谢常德, 彭堃墀. 连续可调谐OPO及其在Cs2分子频率调制光谱中的应用. , 2002, 51(5): 1011-1016. doi: 10.7498/aps.51.1011

计量

文章访问数: 5626
PDF下载量: 88
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板

45 nm宽带可连续调谐半导体薄片激光器