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Based on asymmetric one-dimensional photonic crystal structure,a dual-wavelength vertical-cavity surface-emitting laser (VCSEL) with modified standing wave field distribution has been constructed. The defect layer is Al0.8Ga0.2As with 5λ/4 thickness. Specifically, the dual-wavelength output spectrum of the VCSEL has low absorption loss, easy wavelength adjustment and same output direction. In addition, the two wavelengths and their spacing could be tuned by changing the refractive index contrast of the asymmetric PC structure and the thickness of defect layer. Such dual-VCSEL structure can be applied in optical bistable switches, amplifiers, modulators and detectors, etc..
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Keywords:
- VCSEL /
- photonic crystal gap /
- dual-wavelength
[1] Koyama F 2009 IEICE Electron. Expr. 6 651
[2] Li R, Ren K, Ren X B, Zhou J, Liu D H 2004 Acta Phys. Sin. 53 2520 (in Chinese) [李 蓉、任 坤、任晓斌、周 静、刘大禾 2004 53 2520]
[3] Raftery J J, Lehman A C Jr, Danner A J, Leisher P O, Giannopoulos A V, Choquetter K D 2006 Appl. Phys. Lett. 89 081119
[4] Boutami S, Benbakir B, Leclercq J L, Viktorovithc P 2007 Appl. Phys. Lett. 91 071105
[5] Danner A J, Raftery J J Jr 2004 Appl. Phys. Lett. 84 1031
[6] Carretero L, Ulibarrena M, Blaya S, Finia A 2004 Appl. Optis. 43 2895
[7] Deych L I, Erementchouk M V, Ivchenko E L, Lisyansky A A, Voronov M M 2005 Phys. Stat. Sol. C 2 805
[8] Matsuhisa Y, Ozaki R, Haase W, Yoshino K, Ozaki M 2006 Ferroelectrics 344 239
[9] Choi S S, Morrris S M, Huck W T S, Coles H J 2009 Adv. Mater. 21 1
[10] Yu N, Kats M A, Pflugl C, Geiser M, Wang Q J, Belkin M A, Capasso F, Fischer M, Wittmann A, Faist J, Edamura T, Furuta S, Yamanishi M, Kan H 2009 Appl. Phys. Lett. 95 161108
[11] Guo X, Shen G D, Guan B L, Gu X L , Wu D, Li Y B 2008 Appl. Phys. Lett. 92 013507
[12] Guan B L, Guo X, Yang H, Liang T, Gu X L, Guo J, Deng J, Gao G, Shen G D 2007 Acta Phys. Sin. 56 4585 (in Chinese) [关宝璐、郭 霞、杨 浩、梁 庭、顾晓玲、郭 晶、邓 军、高 国、沈光地 2007 56 4585]
[13] Guan B L, Guo X, Deng J, Qu H W, Lian P, Dong L, Chen M, Shen G D 2006 Chin. Phys. 15 2959
[14] Kyungwon A, Michael S F 1995 Phys. Rev. A 52 1691
[15] Hunt N E J, Schubert E F, Logan R A, Zydzik G J 1992 Appl. Phys. Lett. 61 2287
[16] Hadley G R 1995 Opt. Lett. 20 1483
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[1] Koyama F 2009 IEICE Electron. Expr. 6 651
[2] Li R, Ren K, Ren X B, Zhou J, Liu D H 2004 Acta Phys. Sin. 53 2520 (in Chinese) [李 蓉、任 坤、任晓斌、周 静、刘大禾 2004 53 2520]
[3] Raftery J J, Lehman A C Jr, Danner A J, Leisher P O, Giannopoulos A V, Choquetter K D 2006 Appl. Phys. Lett. 89 081119
[4] Boutami S, Benbakir B, Leclercq J L, Viktorovithc P 2007 Appl. Phys. Lett. 91 071105
[5] Danner A J, Raftery J J Jr 2004 Appl. Phys. Lett. 84 1031
[6] Carretero L, Ulibarrena M, Blaya S, Finia A 2004 Appl. Optis. 43 2895
[7] Deych L I, Erementchouk M V, Ivchenko E L, Lisyansky A A, Voronov M M 2005 Phys. Stat. Sol. C 2 805
[8] Matsuhisa Y, Ozaki R, Haase W, Yoshino K, Ozaki M 2006 Ferroelectrics 344 239
[9] Choi S S, Morrris S M, Huck W T S, Coles H J 2009 Adv. Mater. 21 1
[10] Yu N, Kats M A, Pflugl C, Geiser M, Wang Q J, Belkin M A, Capasso F, Fischer M, Wittmann A, Faist J, Edamura T, Furuta S, Yamanishi M, Kan H 2009 Appl. Phys. Lett. 95 161108
[11] Guo X, Shen G D, Guan B L, Gu X L , Wu D, Li Y B 2008 Appl. Phys. Lett. 92 013507
[12] Guan B L, Guo X, Yang H, Liang T, Gu X L, Guo J, Deng J, Gao G, Shen G D 2007 Acta Phys. Sin. 56 4585 (in Chinese) [关宝璐、郭 霞、杨 浩、梁 庭、顾晓玲、郭 晶、邓 军、高 国、沈光地 2007 56 4585]
[13] Guan B L, Guo X, Deng J, Qu H W, Lian P, Dong L, Chen M, Shen G D 2006 Chin. Phys. 15 2959
[14] Kyungwon A, Michael S F 1995 Phys. Rev. A 52 1691
[15] Hunt N E J, Schubert E F, Logan R A, Zydzik G J 1992 Appl. Phys. Lett. 61 2287
[16] Hadley G R 1995 Opt. Lett. 20 1483
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