基于六角氮化硼二维薄膜的忆阻器

吴全潭; 时拓; 赵晓龙; 张续猛; 伍法才; 曹荣荣; 龙世兵; 吕杭炳; 刘琦; 刘明

doi:10.7498/aps.66.217304

摘要

报道了一种基于多层六角氮化硼（h-BN）二维薄膜的忆阻器件.该器件不需要电预处理过程，且具有自限流的双极性阻变行为；具有较好的抗疲劳性和较长的数据保持时间.该器件在脉冲编程条件下具有模拟转变特性，即在连续的电压脉冲下器件的电阻态能被连续地调控，使得该器件能够模仿神经网络系统中的神经突触权重变化行为.综上所述，基于多层h-BN的忆阻器具有应用在非易失性存储和神经计算中的潜力.

关键词:

Hexagonal boron nitride (h-BN) based resistive switching device is fabricated with the multilayer h-BN film serving as an active material. The device shows the coexistence of forming-free and self-compliance bipolar resistive switching behavior with reproducible switching endurance and long retention time. Moreover, the device in pulse mode shows analog resistive switching characteristics, i.e. the resistance states can be continuously tuned by successive voltage pulses. This suggests that the device is also capable of mimicking the synaptic weight changes in neuromorphic systems.

Keywords:

作者及机构信息

1.
中国科学院微电子研究所, 微电子器件与集成技术重点实验室, 北京 100029;

2.
中国科学院大学, 北京 100049

通信作者: 刘琦, liuqi@ime.ac.cn

基金项目: 国家自然科学基金（批准号：61521064，61422407，61474136，61334007，61404164，61574166，61522408）、国家重点研发计划（批准号：2017YFB0405603，2016YFA0201803）和中国科学院战略性先导科技专项（B类）（批准号：XDPB0603）资助的课题.

Authors and contacts

1.
Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;

2.
University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Liu Qi, liuqi@ime.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61521064, 61422407, 61474136, 61334007, 61404164, 61574166, 61522408), the National Key RD Program of China (Grant Nos. 2017YFB0405603, 2016YFA0201803), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDPB0603).

参考文献

[1]	Prakash A, Maikap S, Lai C S, Lee H Y, Chen W S, Chen F T, Tsai M J 2012 Jpn. J. Appl. Phys. 51 04DD06
[2]	Lee H Y, Chen Y S, Chen P S, Wu T Y, Chen F, Wang C C, Tzeng P J, Tsai M J, Lien C 2010 IEEE Electron Dev. Lett. 31 44
[3]	Su S, Jian X C, Wang F, Han Y M, Tian Y X, Wang X Y, Zhang H Z, Zhang K L 2016 Chin. Phys. B 25 107302
[4]	Tan T, Guo T, Wu Z, Liu Z 2016 Chin. Phys. B 25 117306
[5]	Gao X P, Fu L P, Chen C B, Yuan P, Li Y T 2016 Chin. Phys. B 25 106102
[6]	Park W Y, Kim G H, Seok J Y, Kim K M, Song S J, Lee M H, Hwang C S 2010 Nanotechnology 21 195201
[7]	Wen X Z, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[8]	Yang J J, Zhang M X, Strachan J P, Miao F, Pickett M D, Kelley R D, Medeiros-Ribeiro G, Williams R S 2010 Appl. Phys. Lett. 97 232102
[9]	Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305
[10]	Shi T, Yin X B, Yang R, Guo X 2016 Phys. Chem. Chem. Phys. 18 9338
[11]	Zhao J W, Liu F J, Huang H Q, Hu Z F, Zhang X Q 2012 Chin. Phys. B 21 065201
[12]	Shi T, Yang R, Guo X 2016 Solid State Ionics 296 114
[13]	Shi T, Wu J F, Liu Y, Yang R, Guo X 2017 Adv. Electron. Mater. 3 1700046
[14]	Yao J, Lin J, Dai Y H, Ruan G D, Yan Z, Li L, Zhong L, Natelson D, Tour J M 2012 Nat. Commun. 3 1101
[15]	Liu S, Lu N, Zhao X, Xu H, Banerjee W, L H, Long S, Li Q, Liu Q, Liu M 2016 Adv. Mater. 28 10623
[16]	Hong S K, Kim J E, Kim S O, Cho B J 2011 J. Appl. Phys. 110 044506
[17]	Sangwan V K, Jariwala D, Kim I S, Chen K S, Marks T J, Lauhon L J, Hersam M C 2015 Nat. Nanotech. 10 403
[18]	Park S, Lee J, Kim H S, Park J B, Lee K H, Han S A, Hwang S, Kim S W, Shin H J 2015 ACS Nano 9 633
[19]	Yin J, Li J, Hang Y, Yu J, Tai G, Li X, Zhang Z, Guo W 2016 Small 12 2942
[20]	Qian K, Tay R Y, Nguyen V C, Wang J, Cai G, Chen T, Teo E H T, Lee P S 2016 Adv. Funct. Mater. 26 2176
[21]	Puglisi F M, Larcher L, Pan C, Xiao N, Shi Y, Hui F, Lanza M 2016 2016 IEEE International Electron Devices Meeting (IEDM) San Francisco, USA, December 3-7, 2016 p6651209
[22]	Suk J W, Kitt A, Magnuson C W, Hao Y, Ahmed S, An J, Swan A K, Boldberg B B, Ruoff R S 2011 ACS Nano 5 6916
[23]	Meng J, Zhang X, Wang Y, Yin Z, Liu H, Xia J, Wang H, You J, Jin P, Wang D, Meng X M 2017 Small 13 1604179
[24]	Song L, Ci L, Lu H, Sorokin P B, Jin C, Ni J, Kvashnin A G, Kvashnin D G, Lou J, Yakobson B I, Ajayan P M 2010 Nano Lett. 10 3209
[25]	Shi Y, Hamsen C, Jia X, Kim K K, Reina A, Hofmann M, Hsu A L, Zhang K, Li H, Juang Z Y, Dresselhaus M S, Li L J, Kong J 2010 Nano Lett. 10 4134
[26]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[27]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297

施引文献

[1]	Prakash A, Maikap S, Lai C S, Lee H Y, Chen W S, Chen F T, Tsai M J 2012 Jpn. J. Appl. Phys. 51 04DD06
[2]	Lee H Y, Chen Y S, Chen P S, Wu T Y, Chen F, Wang C C, Tzeng P J, Tsai M J, Lien C 2010 IEEE Electron Dev. Lett. 31 44
[3]	Su S, Jian X C, Wang F, Han Y M, Tian Y X, Wang X Y, Zhang H Z, Zhang K L 2016 Chin. Phys. B 25 107302
[4]	Tan T, Guo T, Wu Z, Liu Z 2016 Chin. Phys. B 25 117306
[5]	Gao X P, Fu L P, Chen C B, Yuan P, Li Y T 2016 Chin. Phys. B 25 106102
[6]	Park W Y, Kim G H, Seok J Y, Kim K M, Song S J, Lee M H, Hwang C S 2010 Nanotechnology 21 195201
[7]	Wen X Z, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[8]	Yang J J, Zhang M X, Strachan J P, Miao F, Pickett M D, Kelley R D, Medeiros-Ribeiro G, Williams R S 2010 Appl. Phys. Lett. 97 232102
[9]	Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305
[10]	Shi T, Yin X B, Yang R, Guo X 2016 Phys. Chem. Chem. Phys. 18 9338
[11]	Zhao J W, Liu F J, Huang H Q, Hu Z F, Zhang X Q 2012 Chin. Phys. B 21 065201
[12]	Shi T, Yang R, Guo X 2016 Solid State Ionics 296 114
[13]	Shi T, Wu J F, Liu Y, Yang R, Guo X 2017 Adv. Electron. Mater. 3 1700046
[14]	Yao J, Lin J, Dai Y H, Ruan G D, Yan Z, Li L, Zhong L, Natelson D, Tour J M 2012 Nat. Commun. 3 1101
[15]	Liu S, Lu N, Zhao X, Xu H, Banerjee W, L H, Long S, Li Q, Liu Q, Liu M 2016 Adv. Mater. 28 10623
[16]	Hong S K, Kim J E, Kim S O, Cho B J 2011 J. Appl. Phys. 110 044506
[17]	Sangwan V K, Jariwala D, Kim I S, Chen K S, Marks T J, Lauhon L J, Hersam M C 2015 Nat. Nanotech. 10 403
[18]	Park S, Lee J, Kim H S, Park J B, Lee K H, Han S A, Hwang S, Kim S W, Shin H J 2015 ACS Nano 9 633
[19]	Yin J, Li J, Hang Y, Yu J, Tai G, Li X, Zhang Z, Guo W 2016 Small 12 2942
[20]	Qian K, Tay R Y, Nguyen V C, Wang J, Cai G, Chen T, Teo E H T, Lee P S 2016 Adv. Funct. Mater. 26 2176
[21]	Puglisi F M, Larcher L, Pan C, Xiao N, Shi Y, Hui F, Lanza M 2016 2016 IEEE International Electron Devices Meeting (IEDM) San Francisco, USA, December 3-7, 2016 p6651209
[22]	Suk J W, Kitt A, Magnuson C W, Hao Y, Ahmed S, An J, Swan A K, Boldberg B B, Ruoff R S 2011 ACS Nano 5 6916
[23]	Meng J, Zhang X, Wang Y, Yin Z, Liu H, Xia J, Wang H, You J, Jin P, Wang D, Meng X M 2017 Small 13 1604179
[24]	Song L, Ci L, Lu H, Sorokin P B, Jin C, Ni J, Kvashnin A G, Kvashnin D G, Lou J, Yakobson B I, Ajayan P M 2010 Nano Lett. 10 3209
[25]	Shi Y, Hamsen C, Jia X, Kim K K, Reina A, Hofmann M, Hsu A L, Zhang K, Li H, Juang Z Y, Dresselhaus M S, Li L J, Kong J 2010 Nano Lett. 10 4134
[26]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[27]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297

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