激光二极管抽运的Nd：YVO4连续自拉曼1175nm激光器

樊莉; 陈海涛; 朱骏

doi:10.7498/aps.63.154208

摘要

报道了采用激光二极管端面抽运的Nd：YVO4晶体连续自拉曼激光器的实验研究. 通过对晶体掺杂浓度及晶体结构的选择优化，减轻自拉曼晶体的热效应，实现了结构紧凑的1175 nm连续自拉曼激光器的高效运转. 最终以两端键合的复合Nd：YVO4晶体作为自拉曼介质，在25.5 W的抽运功率下，获得了最高3.4 W的1175 nm连续拉曼光输出，光光转换效率为13.3%，拉曼阈值低至2.21 W，斜效率为14.6%.

关键词:

Abstract

In this paper, an LD (laser diode) end-pumped continuous-wave Nd:YVO4 self-Raman laser at 1175 nm is reported. The doping concentration and structure of the self-Raman crystals are optimized to reduce the thermal effects of the crystal, and a high-efficient diode-end-pumped continuous-wave self-Raman laser operated at 1175 nm is demonstrated. Finally, the thermal effects are efficiently improved by using a double-end diffusion-bonded composite Nd:YVO4 crystal as a gain medium. An output power up to 3.4 W of the first-order Stokes line 1175 nm is achieved at the incident diode pump power of 25.5 W, corresponding to a diode-to-Stokes optical conversion efficiency of 13.3% and a slope efficiency of 14.6%. The Raman threshold is as low as 2.21 W of diode power at 808 nm.

Keywords:

作者及机构信息

1.
扬州大学物理科学与技术学院, 扬州 225002

基金项目: 江苏省自然科学基金青年科学基金（批准号：BK20130453）和国家自然科学基金青年科学基金（批准号：11004170）资助的课题.

Authors and contacts

1.
School of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China

Funds: Project supported by the Young Scientists Fund of the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130453), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11004170).

参考文献

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施引文献

[1]	Zhu H Y, Zhang G, Zhang Y J, Huang C H, Duan Y M, Wei Y, Wei P F, Yu Y L 2011 Acta Phys. Sin. 60 094209 (in Chinese) [朱海永, 张戈, 张耀举, 黄呈辉, 段延敏, 魏勇, 尉鹏飞, 于永丽 2011 60 094209]
[2]
[3]	Wang B S, Peng J Y, Miao J G, Li Y M, Hao E J, Zhang Z, Gao L L, Tan H M 2007 Chin. Phys. Lett. 24 112
[4]
[5]	Wang B S, Tan H M, Gao L L, Peng J Y, Miao J G 2006 Chin. Phys. Lett. 23 2095
[6]
[7]	Wang Z P, Hu D W, Fang X, Zhang H J, Xu X G, Wang J Y, Shao Z S 2008 Chin. Phys. Lett. 25 122
[8]
[9]	Su F F, Zhang X Y, Wang Q P, Chang J, Jia P, Li S T, Zhang X L, Cong Z H 2007 Chin. Phys. B 16 3370
[10]
[11]	Grabtchikov A S, Lisinetskii V A, Orlovich V A, Schmitt M, Maksimenka R, Kiefer W 2004 Opt. Lett. 29 2524
[12]
[13]
[14]	Demidovich A A, Grabtchikov A S, Lisinetskii V A, Burakevich V N, Orlovich V A, Kiefer W 2005 Opt. Lett. 30 1701
[15]
[16]	Burakevich V N, Lisinetskii V A, Grabtchikov A S, Demidovich A A, Orlovich V A, Matrosov V N 2007 Appl. Phys. B 86 511
[17]
[18]	Lisinetskii V A, Grabtchikov A S, Demidovich A A, Burakevich V N, Orlovich V A, Titov A N 2007 Appl. Phys. B 88 499
[19]	Lee A J, Pask H M, Omatsu T, Dekker P, Piper J A 2007 Appl. Phys. B 88 539
[20]
[21]	Dekker P, Pask H M, Spence D J, Piper J A 2007 Opt. Express 15 7038
[22]
[23]
[24]	Lee A J, Pask H M, Dekker P, Piper J A 2008 Opt. Express 16 21958
[25]	MacDonald M P, Graf T, Balmer J E, Weber H P 2000 Opt. Commun. 178 383
[26]
[27]
[28]	Chang Y T, Su K W, Chang H L, Chen Y F 2009 Opt. Express 17 4330
[29]	Lu Y F, Zhang X H, Li S T, Xia J, Cheng W B, Xiong Z 2010 Opt. Lett. 35 2964
[30]
[31]
[32]	Kaminskii A A, Ueda K, Eichler, H J, Kuwano Y, Kouta H, Bagaev S N, Chyba T H, Barnes J C, Gad G M A, Murai T, Lu J R 2001 Opt. Commun. 194 201
[33]
[34]	Chen Y F 1999 IEEE J. Quantum Electron. 35 234
[35]	Chang Y F, Huang Y P, Su K W, Chen Y F 2008 Opt. Express 16 21155

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