高k介质在新型半导体器件中的应用

黄力; 黄安平; 郑晓虎; 肖志松; 王 玫

doi:10.7498/aps.61.137701

摘要

当CMOS器件特征尺寸缩小到45 nm以下, SiO2作为栅介质材料已经无法满足性能和功耗的需要, 用高k材料替代SiO2是必然选择. 然而, 由于高k材料自身存在局限性, 且与器件其他部分的兼容性差, 产生了很多新的问题如界面特性差、阈值电压增大、迁移率降低等. 本文简要回顾了高k栅介质在平面型硅基器件中应用存在的问题以及从材料、结构和工艺等方面采取的解决措施, 重点介绍了高k材料在新型半导体器件中的应用, 并展望了未来的发展趋势.

关键词:

高k材料 /
FinFET /
石墨烯器件 /
忆阻器

Abstract

As the feature size of MOSFET scales beyond 45 nm, SiO2 as gate dielectric fails to meet the performance requirement because of the high gate oxide leakage current. It is necessary to replace SiO2 with high-k materials. However, high-k materials as gate dielectric have some limitations and are not expectedly compatible with the conventional structure, inducing new challenges such as bad interfacial quality, increased threshold voltage, mobility degradation, etc. In this paper we review the problems encountered in the introduction of high-k gate dielectric into planar devices and the solutions in terms of material, device structure and process integration. Some novel applications of high-k materials in new devices and the future trend are also reviewed.

Keywords:

作者及机构信息

1.
北京航空航天大学电子信息工程学院, 北京 100191;

2.
北京航空航天大学物理科学与核能工程学院, 北京 100191

基金项目: 国家自然科学基金(批准号: 51172009, 51172013和11074020) 和教育部新世纪优秀人才计划(NCET-08-0029)资助的课题.

Authors and contacts

1.
Department of Electronic and Information Engineering, Beihang University, Beijing 100191, China;

2.
Department of Physics, Beihang University, Beijing 100191, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51172009, 51172013, 11074020), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0029).

参考文献

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[19]	Liao L, Bai J W, Cheng R, Lin Y C, Jiang S, Huang Y, Duan X F 2010 Nano Lett. 10 1917
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[21]	Szot K, Rogala M, Speier W, Klusek Z, Besmehn A, Waser R 2011 Nanotechnology 22 254001
[22]	Lee H Y, Chen P S, Wang C C, Maikap S, Tzeng P J, Lin C H, Lee L S 2007 Jpn. J. Appl. Phys. 46 2175
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[24]	Sun J, Lind E, Maximov I, Xu H Q 2011 IEEE Electron Dev. Lett. 32 131
[25]	Yan X B, Xia Y D, Xu H N, Gao X, Li H T, Li R, Yin J, Liu Z G 2010 Appl. Phys. Lett. 97 112101
[26]	Menke T, Meuffels P, Dittmann R, Szot K, Waser R 2009 J. Appl. Phys. 105 066104
[27]	Driscoll T, Kim H-T, Chae B-G, Ventra M D, Basov D N 2009 Appl. Phys. Lett. 95 043503
[28]	Yang Z, Ko C, Ramanathan S 2011 Annu. Rev. Mater. Res. 41 337
[29]	Xia Q F, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G, Williams R S 2009 Nano Lett. 9 3640
[30]	Pershin Y V, Ventra M D 2010 IEEE Trans. Circuits Syst. I, Reg. Papers 57 1857

施引文献

[1]	Robertson J 2006 Rep. Prog. Phys. 69 327
[2]	Zheng X H, Huang A P, Yang Z C, Xiao Z S, Wang M, Cheng G A 2011 Acta Phys. Sin. 60 017702 (in Chinese) [郑晓虎, 黄安平, 杨智超, 肖志松, 王玫, 程国安 2011 60 017702]
[3]	Weng Y, Wang H 2008 Semiconductor Technology 33 1 (in Chinese) [翁妍, 汪辉 2008 半导体技术 33 1]
[4]	Fischetti M V, Neumayer D A, Cartier E A 2001 J. Appl. Phys. 90 4587
[5]	Weber O, Casse M, Thevenod L, Ducroquet F, Ernst T, Deleonibus S 2006 Solid-State Electron. 50 626
[6]	Yang Z C, Huang A P, Xiao Z S 2010 Physics 39 113 (in Chinese) [杨智超, 黄安平, 肖志松 2010 物理 39 113]
[7]	Datta S, Dewey G, Doczy M, Doyle B S, Jin B, Kavalieros J, Kotlyer R, Metz M, Zelick N, Chau R 2003 IEEE International Electron Devices Meeting, Washington, D.C., December 08-10, 2003 p653
[8]	Maitra K, Frank M M, Narayanan V, Misra V, Cartier E A 2007 J. Appl. Phys. 102 114507
[9]	Weber O, Damlencourt J F, Andrieu F, Ducroquet F, Ernst T, Hartmann J M, Papon A M, Renault O, Guillaumot B, Deleonibus S 2006 IEEE Trans. Electron Devices 53 449
[10]	Lin Y X, Ozturk M C, Chen B, Rhee S J, Lee J C, Misra V 2005 Appl. Phys. Lett. 87 071903
[11]	Johansson M, Yousif M Y A, Lundgren P, Bengtsson S, Sundqvist J, Harsta A, Radamson H H 2003 Semicond. Sci. Technol. 18 820
[12]	Chung K B, Lucovsky G, Lee W J, Cho M H, Jeon H 2009 Appl. Phys. Lett. 94 042907
[13]	Chau R, Datta S, Doczy M, Doyle B, Kavalieros J, Metz M 2004 IEEE Electron Dev. Lett. 25 408
[14]	Hisamoto D, Lee W C, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King T J, Bokor J, Hu C M 2000 IEEE Trans. Electron Devices 47 2320
[15]	Agrawal S, Fossum J G 2008 IEEE Trans. Electron Devices 55 1714
[16]	Manoj C R, Rao V R 2007 IEEE Electron Dev. Lett. 28 295
[17]	Shishir R S, Ferry D K 2009 J. Phys.: Condens. Matter 21 232204
[18]	Moon J S, Curtis D, Hu M, Wong D, McGuire C, Campbell P M, Jernigan G, Tedesco J L, VanMil B, Myers-Ward R, Eddy C, Gaskill D K 2009 IEEE Electron Dev. Lett. 30 650
[19]	Liao L, Bai J W, Cheng R, Lin Y C, Jiang S, Huang Y, Duan X F 2010 Nano Lett. 10 1917
[20]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[21]	Szot K, Rogala M, Speier W, Klusek Z, Besmehn A, Waser R 2011 Nanotechnology 22 254001
[22]	Lee H Y, Chen P S, Wang C C, Maikap S, Tzeng P J, Lin C H, Lee L S 2007 Jpn. J. Appl. Phys. 46 2175
[23]	Lee H Y, Chen P S, Wu T Y, Chen Y S, Wang C C, Tzeng P J, Lin C H, Chen F, Lien C H, Tsai M J 2008 IEEE International Electron Devices Meeting, San Francisco CA, December 15-17, 2008 p1
[24]	Sun J, Lind E, Maximov I, Xu H Q 2011 IEEE Electron Dev. Lett. 32 131
[25]	Yan X B, Xia Y D, Xu H N, Gao X, Li H T, Li R, Yin J, Liu Z G 2010 Appl. Phys. Lett. 97 112101
[26]	Menke T, Meuffels P, Dittmann R, Szot K, Waser R 2009 J. Appl. Phys. 105 066104
[27]	Driscoll T, Kim H-T, Chae B-G, Ventra M D, Basov D N 2009 Appl. Phys. Lett. 95 043503
[28]	Yang Z, Ko C, Ramanathan S 2011 Annu. Rev. Mater. Res. 41 337
[29]	Xia Q F, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G, Williams R S 2009 Nano Lett. 9 3640
[30]	Pershin Y V, Ventra M D 2010 IEEE Trans. Circuits Syst. I, Reg. Papers 57 1857

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