反对称n-AlGaN层对GaN基双蓝光波长发光二极管性能的影响

严启荣; 章勇; 闫其昂; 石培培; 郑树文; 牛巧利; 李述体; 范广涵

doi:10.7498/aps.61.036103

摘要

采用数值分析方法对在InGaN/GaN混合多量子阱活性层和n-GaN之间引入n-AlGaN层的GaN基双蓝光波长发光二极管进行模拟分析.结果发现,与传统的具有p-AlGaN电子阻挡层的双蓝光波长发光二极管相比,这种反对称n-AlGaN层能有效改善电子和空穴在混合多量子阱活性层中的分布均匀性及减少电子溢出,实现电子空穴在各个量子阱中的平衡辐射,从而减弱了双蓝光波长发光二极管的效率衰减.此外,通过改变Al组分可以提高双蓝光波长发光二极管发射光谱的稳定性:当Al组分为0.16时,双蓝光波长发光二极管的光谱在小电流下比较稳定,而Al组分为0.12时,光谱在大电流下比较稳定.

关键词:

Abstract

The effect of an n-type AlGaN layer on the physical properties of dual-wavelength light-emitting diode (LED) is investigated numerically. The simulation results show that compared with the conventional p-type AlGaN electron-blocking layer (EBL), the n-type AlGaN layer can improve the distribution of electrons and holes more uniformly and realize the radiation balance between electrons and holes in the quantum wells, and further reduce the efficiency dro of dual-blue wavelength LED at high current. In addition, the spontaneous emission rate of two kinds of quantum wells can be adjusted through the control of Al composition. It can be found from the results that the emission spectrum of dual-blue wavelength LED is more stable at low current with an Al composition of 0.16, while the emission spectrum is more stable at high current with an Al composition of 0.12.

Keywords:

作者及机构信息

1.
华南师范大学光电子材料与技术研究所, 广州 510631

基金项目: 教育部留学回国人员科研启动基金(批准号: 20091001)、广东省教育部产学研结合项目(批准号: 2009B090300338)、国家自然科学基金(批准号: 8251063101000-007)和华南师范大学学生课外科研重点课题项目(10GDKC07)资助的课题.

Authors and contacts

1.
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China

Funds: Project supported by the Ministry of Education Scientific Research Foundation for Returned Students, China (Grant No. 20091001), the Production and Research Program of Guangdong Province and Ministry of Education, China (Grant No. 2009B090300338), the National Natural Science Foundation of China (Grant No. 8251063101000-007), and the Extracurricular Project for Students’ Scientific Research of South China Normal University, China (Grant No.10GDKC07).

参考文献

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[22]	Kuo Y K, Horng S H, Yen S H, Tsai M C, Huang M F 2009 Appl.Phys. A 98 509

施引文献

[1]	Nakamura S, Fasol G 1997 The Blue Laser Diode: GaN BasedLight Emitters and Lasers (Berlin: Springer) p216
[2]	Yamada M, Naitou T, Izumo K, Tamaki H, Murazaki Y, Kameshima M, Mukai T 2003 Jpn. J. Appl. Phys. 42 L20
[3]	Sheu J K, Chang S J, Kuo C H, Su Y, Wu L W, Lin Y C, Lai W C, Tsai J M, Chi G C, Wu R K 2003 IEEE Photonics Techol. Lett. 1518
[4]	Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 595002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
[5]	Ozden I, Makarona E, Nurmikko A V, Takeuchi T, KramesM2001Appl. Phys. Lett. 79 2532
[6]	Chen C H, Chang S J, Su Y K 2003 Phys. Stat. Sol. 7 2257
[7]	Wang X H, Jia H Q, Guo L W, Xing Z G, Wang Y, Pei X J, Zhou JM, Chen H 2007 Appl. Phys. Lett. 91 1912
[8]	Wang X H, Guo L W, Jia H Q, Xing Z G, Wang Y, Pei X J, Zhou JM, Chen H 2009 Appl. Phys. Lett. 94 1913
[9]	Shi J W, Chen C C, Wang C K, Lin C S, Sheu J K, Lai W C, KuoC H, Tun C J, Yang T H, Tsao F C, Chyi J I 2008 IEEE PhotonicsTechnol. Lett. 20 449
[10]	Park I K, Kim J Y, Kwon M K, Cho C Y, Lim J H, Park S J 2008Appl. Phys. Lett. 92 091110
[11]	Mirhosseini R, Schubert M F, Chhajed S, Cho J, Kim J K, SchubertE F 2009 Opt. Express 17 10806
[12]	Chen X W, Zhang Y, Li S T, Yan Q R, Zheng S W, He M, Fan GH 2011 Status Solid A 208 1972
[13]	David A, Grundmann M J, Kaeding J F, Gardner N F, MihopoulosT G, Krames M R 2008 Appl. Phys. Lett. 92 053502
[14]	Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 J. Appl. Phys.89 5815
[15]	Fiorentini V, Bernardini F, Amacher O 2002 Appl. Phys. Lett. 801204
[16]	Bernardini F 2007 "Spontaneous and Piezoelectric Polarization:Basic Theory vs. Practical Recipes" in Nitride Semiconductor Devices:Principles and Simulation (Weinheim: WILEY-VCH VerlagGmbH & Co.KGaA) p49
[17]	Gu X L, Guo X, Wu D, Xu L H, Liang T, Guo J, Shen G D 2007Acta Phys. Sin. 56 4977 (in Chinese) [顾晓玲, 郭霞, 吴迪, 徐丽华, 梁庭, 郭晶, 沈光地 2007 56 4977]
[18]	Renner F, Kiesel P, Doehler G, Kneissl M A, Van de Walle C G, Jpohnson N M 2002 Appl. Phys. Lett. 81 490
[19]	Zhang H, Miller E J, Yu E T, Poblenz C, Speck J S 2004 Appl.Phys. Lett. 84 4644
[20]	Heikman S, Keller S, Wu Y, Speck J S, Denbaars S P, Mishra U K2003 J. Appl. Phys. 93 10114
[21]	Mao Q H, Jiang F Y, Cheng H Y, Zheng C D 2010 Acta Phys. Sin.59 8078 (in Chinese) [毛清华, 江风益, 程海英, 郑畅达 2010 59 8078]
[22]	Kuo Y K, Horng S H, Yen S H, Tsai M C, Huang M F 2009 Appl.Phys. A 98 509

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