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利用纳米球刻蚀法制备了二维六角密排三角形银纳米阵列, 通过加入铬过渡层并改变其位置和改变金属沉积角度, 研究它们对点阵结构的影响. 实验发现, 加入铬过渡层所形成的银纳米点阵结构较无铬层有很大改善, 三角形角部更加尖锐, 更能满足传感器对信号检测的要求. 同时, 该过渡层应蒸镀在模板球排列之后, 才能获取更大面积的二维银纳米点阵结构. 在沉积角度对制备二维银纳米点阵的实验中, 基片没有旋转, 采用垂直镀膜方式更容易得到结构完整、结合较牢固、且面积较大、角部尖锐的二维银纳米点阵. 吸收光谱测量进一步验证了铬过渡层对二维银纳米点阵形貌结构的改善作用. 这些为下一步的生物修饰以及生物化学传感器的制备提供了先决条件.Ag nanoparticles with 2-dimensional (2D) array structure were fabricated via nanosphere lithography. The influence of Cr interlayer position and metal deposition direction on the array structure was systematically studied. It was found that the structure of the 2D Ag nanoparticle array with Cr interlayer was better than that without interlayers. When the Cr interlayer was deposited on the PS mask, the tips of the acquired triangle nanoparticles were much sharper, and the area of the nanoparticle array was much larger than the other cases. Moreover, the achieved nanoparticle array has a better uniformity and compactness in structure, and higher binding ability to the substrate when Cr and Ag deposition direction was perpendicular to the surface of the substrate. Further absorption spectrum experiment proved the improvement of the structure and feature of the 2D Ag nanoparticle array. All these are very crucial for the future modification and fabrication of biochemical sensors with the 2D Ag nanoparticle array.
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Keywords:
- nanosphere lithography /
- Cr interlayer /
- deposition direction /
- absorption spectrum
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[14] Hulteen J C, Treichel D A, Smith M T, Duval M L, Jensen T R, van Duyne R P 1999 J. Phys. Chem. B 103 3854
[15] Adam K, Witold K, Hanna G, Michael G 2005 Small 4 439
[16] Sun X L, Shao J D 2006 Chin. J. Lasers 33 1680 (in Chinese)[孙喜莲, 邵建达 2006 中国激光 33 1680]
[17] Jin C R, Cao Y W, Mirkin C A, Kelly K L, Schatz G C, Zheng J G 2001 Science 294 1901
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[1] Link S, El- Sayed M A 1999 J. Phys. Chem. B 103 8410
[2] Haes A J, Zou S, Schatz G C, van Duyne R P 2003 SPIE 5221 47
[3] Haes A J, Chang L, KleinWL, van Duyne R P 2005 J. Am. Chem. Soc. 127 2264
[4] Barbillon G, Bijeon J L, Plain J, Lamy de la Chapelle M, Adam P M, Royer P 2007 Surf. Sci. 601 5057
[5] DeRose G A, Zhu L, Poon J K S, Yariv A, Scherer A 2008 Microelectron. Eng. 85 758
[6] Wallraff G M, Hinsberg W D 1999 Chem. Rev. 99 1801
[7] Jeong G H, Park J K, Lee K K, Jiang J H, Lee C H, Kang H B, Ynag C W, Suh S J 2010 Microelectron. Eng. 87 51
[8] Canpean V, Astilean S, Petrisor J T, Gabor M, Ciascai I 2009 Mater. Lett. 63 1834
[9] Malinsky M D, Kelly K L, Schatz G C, van Duyne R P 2001 J. Am. Chem. Soc. 123 1471
[10] Tan T Y, Huang J B, Zhan M Q, Shao J D, Fan Z X 2006 Chin. J. Lasers 33 242 (in Chinese)[谭天亚,黄建兵, 占美琼, 邵建达, 范正修 2006 中国激光 33 242]
[11] Xu X K, Tang Z S, Fan Z X, Shao J D 2004 Opt?Eng. 43 971
[12] Zhang S L, Xie J P, Fang Y J, Jin J S, Ye G X 2007 Acta Phys. Sin. 56 5452 (in Chinese)[章盛林, 谢建平, 方轶君, 金进生, 叶高翔 2007 56 5452]
[13] Li W, Xu L, Sun P, Zhao W M, Huang X F, Xu J, Chen K J 2007 Acta Phys. Sin. 56 4242 (in Chinese)[李卫, 徐岭,孙 萍, 赵伟明, 黄信凡,徐俊, 陈坤基 2007 56 4242]
[14] Hulteen J C, Treichel D A, Smith M T, Duval M L, Jensen T R, van Duyne R P 1999 J. Phys. Chem. B 103 3854
[15] Adam K, Witold K, Hanna G, Michael G 2005 Small 4 439
[16] Sun X L, Shao J D 2006 Chin. J. Lasers 33 1680 (in Chinese)[孙喜莲, 邵建达 2006 中国激光 33 1680]
[17] Jin C R, Cao Y W, Mirkin C A, Kelly K L, Schatz G C, Zheng J G 2001 Science 294 1901
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