Al和Sb共掺对ZnO有序阵列薄膜的结构和光学性能的影响

钟文武; 刘发民; 蔡鲁刚; 丁芃; 柳学全; 李一

doi:10.7498/aps.60.118102

摘要

采用水热合成法在预先生长的ZnO种子层的玻璃衬底上制备出Al和Sb共掺ZnO纳米棒有序阵列薄膜. 通过X射线衍射、扫描电镜、透射电镜和选区电子衍射分析表明:所制备的薄膜由垂直于ZnO种子层的纳米棒组成, 呈单晶六角纤锌矿ZnO结构, 且沿[001]方向择优生长, 纳米棒的平均直径和长度分别为27.8 nm和1.02 m. Al和Sb共掺ZnO纳米棒有序阵列薄膜的拉曼散射分析表明:相对于未掺杂ZnO薄膜的拉曼振动峰(580 cm-1), Al和Sb共掺ZnO阵列薄膜的E1(LO)振动模式存在拉曼位移. 当Al和Sb的掺杂量为3.0at%,4.0at%,5.0at%,6.0at%时, Al和Sb共掺ZnO阵列薄膜的拉曼振动峰的位移量分别为3,10,14,12 cm-1. E1 (LO) 振动模式位移是由Al和Sb掺杂ZnO产生的缺陷引起的. 室温光致发光结果表明:掺杂Al和Sb后, ZnO薄膜在545 nm处的发光强度减小,在414 nm处的发光强度增加. 这是由于掺杂Al和Sb后, ZnO薄膜中Zni缺陷增加, Oi缺陷减少引起的.

关键词:

Abstract

An Al and Sb codoped ZnO nanorod ordered array thin film is deposited on a glass substrate with a ZnO seed layer by hydrothermal method. The XRD, SEM, TEM, and SAED results indicate that the thin film consists of nanorods growing in the direction vertical to the ZnO seed layer, and that the nanorods with an average diameter of 27.8 nm and length of 1.02 m consist of single crystalline wurtzite ZnO crystal growing along the [001] direction. Raman scattering analysis demonstrates that the Al and Sb codoped ZnO thin films with the concentrations of Al and Sb of 3.0 at%, 4.0 at%, 5.0 at%, 6.0 at% have Raman shifts of 3, 10, 14 and 12 cm-1 according to Raman shift 580 cm-1 of undoped ZnO nanorod thin film, respectively. Room temperature photoluminescence reveals that the emission intensity decreases at 545 nm and increases at 414 nm in ZnO film prepared by the codoping of Al and Sb. It is because the decrease of Oi and the increase of Zni are caused by the codoping of Al and Sb.

Keywords:

作者及机构信息

1.
北京航空航天大学物理科学与核能工程学院,微纳测控与低维物理教育部重点实验室,北京 100191;

2.
钢铁研究总院,北京 100081

基金项目: 国家高技术研究发展计划(批准号:2009AA03C116)资助的课题.

Authors and contacts

1.
Department of Physics, School of Physics and Nuclear Energy Engineering, Key Laboratory of Micro-nano Measurement-Manipulation and Physics, Ministry of Education,Beihang University, Beijing 100191, China;

2.
Central Iron and Steel Research Institute, Beijing 100081, China

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施引文献

[1]	Wang D Y, Gao S X, Li G, Zhao M 2010 Acta Phys. Sin. 59 3473 (in Chinese) [王德义、高书霞、李刚、赵鸣 2010 59 3473]
[2]
[3]	Cheng C W, Sie E J, Liu B, Huan C H A, Sum T C, Sun H D, Fan H J 2010 Appl. Phys. Lett. 96 071107
[4]
[5]	Gao L, Zhang J M 2010 Acta Phys. Sin. 59 1263 (in Chinese) [高立、张建民 2010 59 1263]
[6]	Deng B, Sun H Q, Guo Z Y, Gao X Q 2010 Acta Phys. Sin. 59 1212 (in Chinese) [邓贝、孙惠卿、郭志友、高小奇 2010 59 1212]
[7]
[8]
[9]	Yang Y, Qi J J, Liao Q L, Zhang Y, Yan X Q, Huang Y H, Tang L D 2009 Appl. Phys. A 94 799
[10]
[11]	Yamamoto T 2002 Thin Solid Films 420 100
[12]
[13]	Sui Y R, Yao B, Yang J H, Gao L L, Yang T, Deng R, Ding M, Zhao T T, Huang X M, Pan H L, Shen D Z 2010 J. Lumine. 130 1101
[14]
[15]	Wei S F, Lian J S, Wu H 2010 Mater. Charact. 61 1239
[16]
[17]	Fuge G M, Holmes T M S, Ashfold M N R 2009 Chem. Phys. Lett. 479 125
[18]	Wu J J, Liu S C 2002 Adv. Mater. 14 215
[19]
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[21]	Koh Y W, Lin M, Tan C K, Foo Y L, Loh K P 2004 J. Phys. Chem. B 108 11419
[22]	Song J J, Lim S W 2007 J. Phys. Chem. C 111 596
[23]
[24]	Chien C T, Wu M C, Chen C W, Yang H H, Wu J J, Su W F, Lin C S, Chen Y F 2008 Appl. Phys. Lett. 92 223102
[25]
[26]
[27]	Han N, Wu X F, Chai L, Liu H D, Chen Q F 2010 Sensor Actuat. B: Chem. 150 230
[28]	Rajalakshmi M, Arora Akhilesh K, Bendre B S, Shailaja M 2000 J. Appl. Phys. 87 2445
[29]
[30]
[31]	Alim K A, Fonoberov V A, Balandin A A 2005 Appl. Phys. Lett. 86 053103
[32]
[33]	Du G T, Ma Y, Zhang Y T, Yang T P 2005 Appl. Phys. Lett. 87 213103
[34]
[35]	Permogorov S, Reznitsky A 1976 Solid State Commun. 18 781
[36]
[37]	Samanta K, Bhattacharya P, Katiyar R S 2010 J. Appl. Phys. 108 113501
[38]	Kim H W, Kebede M A, Kim H S 2010 Current Appl. Phys. 10 60
[39]
[40]	Bundersmann C, Ashkenov N, Schubert M, Spenmann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974
[41]
[42]
[43]	Srikant V, Clarke D R 1998 J. Appl. Phys. 83 5447
[44]	Look D C, Hemsky J W, Sizelove J R 1999 Phys. Rev. Lett. 82 2552
[45]
[46]
[47]	Lee M K, Tu H F 2007 J. Appl. Phys. 101 126103
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[49]	Wei X Q, Man B Y, Liu M, Xue C S, Zhuang H Z, Yang C 2007 Physica B 388 145
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[52]	Han N, Hu P, Zuo A H, Zhang D W, Tian Y J, Chen Y F 2010 Sensor Actuat. B: Chem. 145 114
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[54]	Cheng W, Wu P, Zou X, Xiao T 2006 J. Appl. Phys. 100 054311
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[58]	Studenikin S A, Golego N, Cocivera M 1998 J. Appl. Phys. 84 2287
[59]

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