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研究了Er0.1Gd0.9VO4晶体材料的红外量子剪裁现象, 发现了较为有趣的基质敏化的红外量子剪裁现象. 即对于1537.5 nm的4I13/24I15/2红外荧光的激发谱存在一个宽而强的337.0 nm波长的激发谱峰,仔细分析可以认定337.0 nm的激发峰对应着基质GdVO4材料的吸收. 同时,发光谱的测量显示337.0 nm光激发Er0.1Gd0.9VO4材料的基质吸收带时导致的1537.5 nm4I13/24I15/2红外荧光的积分强度比其他所有荧光的积分强度的总和大了接近10倍, 它的红外量子剪裁效率仅次于最强的2H11/2能级受激的红外量子剪裁效率且比其他能级都强.
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关键词:
- 红外的量子剪裁 /
- 太阳能电池 /
- Er0.1Gd0.9VO4晶体材料
The infrared quantum cutting phenomena of Er0.1Gd0.9VO4 crystal are studied in the present article. An interesting host sensitized infrared quantum cutting phenomenon is found, that is, there is a strong and broad excitation peak at 337.0 nm wavelength for its excitation spectrum of 1537.5 nm 4I13/24I15/2 infrared fluorescence. It can be recognized that the 337.0 nm excitation peak corresponds to the absorption of host GdVO4 crystal. Meanwhile, it is found that the integral fluorescence intensity of 1537.5 nm 4I13/24I15/2 infrared fluorescence, when the host absorption band is excited by 337.0 nm light, is about ten times larger than that of the sum of all other fluorescence intensities. Its infrared quantum cutting efficiency is similar to that of the excited 2H11/2 energy level and larger than that of others.-
Keywords:
- infrared quantum cutting /
- solar cell /
- Er0.1Gd0.9VO4 crystal
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[16] Richards B S 2006 Solar Energy Materials Solar Cells 90 1189
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[32] [33] Wei X T, Zhao J B, Chen Y H, Yin M, Li Y 2010 Chin. Phys. B 19 077804
[34] Wang N Y, Zhang L 2001 Acta Phys. Sin. 50 693 [王乃彦、 张 路 2001 50 693]
[35] [36] Chen X Y, Luo Z D 1998 Chin. Phys. 7 773
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[1] Yang G Z 1995 Optical Physics (Beijing : Science Press) (in Chinese) [杨国桢 1995 光物理科学(北京:科学出版社)]
[2] Wegh R T, Donker H, Oskam K D, and Meijerink A 1999 Science 283 663
[3] [4] Vergeer P, Meijerink A 2005 Physical Review B 71 014119
[5] [6] [7] Matsui T, Ogata K, Isomura M, Kondo M 2006 Journal of Non-Crystalline Solids 352 1255
[8] [9] Van der Ende B M, Aarts L, Meijerink A 2009 Advanced Materials 21 3073
[10] [11] Reisfeld R 1977 Lasers and excited states of rare-earth (New York: Springer-Verlag, Berlin Heidelberg)
[12] [13] Zhou J J, Teng Y, Ye S, Xu X Q, Qiu J R 2010 Optics Express 18 21663
[14] [15] Chen D Q, Wang Y S, Yu Y L, Huang P, Weng F Y 2008 Optics Letters 33 1884
[16] Richards B S 2006 Solar Energy Materials Solar Cells 90 1189
[17] [18] [19] Eliseeva S V, Bunzli J C G 2010 Chemical Society Reviews 39 189
[20] Zaguniennyi A I, Ostoumov V G, Shcherbakov I A, Jensen T, Meyn J P, and Huber G 1992 Sov. J. Quant. Electron. 22 1071
[21] [22] Xu X R, Shu M Z 2003 Science of Luminescence and Luminescent Material (Beijing: The Publish Center of Material Science and Engineering) (in Chinese)[徐叙瑢、 苏勉曾 2003 发光学与发光材料 (北京: 材料科学与工程出版中心)]
[23] [24] Carnall W T, Fieldd R, Rajnank K T 1968 J. Chem. Phys. 49 4424
[25] [26] Rodriguez V D, Tikhomirov V K, Mendez-Ramos J 2010 Solar Energy Materials and Solar Cells 94 1612
[27] [28] Chen J D, Guo H, Li Z Q, Zhang H, Zhuang Y X 2010 Opt. Materials 32 998
[29] [30] [31] Song Z F, Lian S R, Wang S K 1982 Acta Phys. Sin. 31 772 (in Chinese)[宋增福、 连绍仁、 王淑坤 1982 31 772]
[32] [33] Wei X T, Zhao J B, Chen Y H, Yin M, Li Y 2010 Chin. Phys. B 19 077804
[34] Wang N Y, Zhang L 2001 Acta Phys. Sin. 50 693 [王乃彦、 张 路 2001 50 693]
[35] [36] Chen X Y, Luo Z D 1998 Chin. Phys. 7 773
[37] [38] Zhang X G, Yang B J 2002 Acta Phys. Sin. 51 2745 (in Chinese)[张晓光、 杨伯君 2002 51 2745]
[39] [40] Yang G J, Huang Z Q, Hu G 1991 Acta Phys. Sin. 40 1575 (in Chinese) [杨国建、 黄祖洽、 胡 岗 1991 40 1575]
[41] [42] Chen Z J, Chen H Y, Gong Q H 1999 Acta Phys. Sin. 48 477 (in Chinese) [陈志坚、 陈慧英、 龚旗煌 1999 48 477]
[43] [44] [45] Zhao Z X 1979 Acta Phys. Sin. 28 222 (in Chinese) [赵忠贤 1979 28 222]
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