类石墨烯锗烯研究进展

秦志辉

doi:10.7498/aps.66.216802

摘要

近年来，伴随石墨烯研究的深入开展，考虑到兼容半导体工业，构筑类石墨烯锗烯并探究其奇特电学性质已成为凝聚态物理领域的研究前沿.本文首先简要介绍了锗烯这一全新二维体系的理论研究进展，包括锗烯的几何结构、电子结构及其调控以及它们之间的关系.理论研究表明，因最近邻原子间距大，锗烯比硅烯更难构筑，实验上构筑锗烯颇具挑战性.针对这一问题，介绍了实验上制备锗烯的一些进展，重点介绍了金属表面外延制备锗烯，并对本征锗烯的制备及其在未来纳电子学器件的潜在应用做出了展望.

关键词:

Abstract

With tremendous progress of graphene and with the consideration of the compatibility with semiconductor industry, the construction of analogous two-dimensional crystalline systems-new two-dimensional honeycomb and layered materials composed of elements other than carbon, the group IV (Si, Ge) analogs of graphene and the investigation of their fascinated electronic properties have become the frontier topics of condensed matter physics. Theoretical calculation predicts that unlike the planar structure of graphene, the germanene has stable, two-dimensional, low-buckled, honeycomb structure similar to that of silicene, but has much higher spin-orbit band gap than silicene, which is certainly of crucial importance in future electronics. The influences of atomic structures and the buckling of the low-buckled geometry on local electronic structure of the fabricated germanene are also reviewed from the atomic point of view. As theoretical studies on germanene are rapidly increasing, now the major challenge in this field is the preparation of high-quality germanene. Compared with silicene, the germanene has larger Ge-Ge interatomic distance which can weaken the orbital overlaps, resulting in the big difficulty in constructing germanene. In this work we review the recent progress of experimental epitaxial growth of germanene on surfaces, with emphasis on metal surfaces. The growth of quasi-freestanding germanene and its potential applications in nanoelectronics in the future are also discussed.

Keywords:

作者及机构信息

秦志辉

1.
湖南大学物理与微电子科学学院, 长沙 410082

通信作者: 秦志辉, zhqin@hnu.edu.cn,zhqin@wipm.ac.cn

基金项目: 国家重点基础研究发展计划（批准号：2013CBA01600）和国家自然科学基金（批准号：11574350）资助的课题.

Authors and contacts

Qin Zhi-Hui

1.
School of Physics and Electronics, Hunan University, Changsha 410082, China

Corresponding author: Qin Zhi-Hui, zhqin@hnu.edu.cn,zhqin@wipm.ac.cn

Funds: Project supported by the National Basic Research Program of China (Grant No. 2013CBA01600) and the National Natural Science Foundation of China (Grant No. 11574350).

参考文献

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施引文献

[1]	Castro Neto A H, Guinea F, Peres N M R, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109
[2]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[3]	Dai B, Fu L, Zou Z, Wang M, Xu H, Wang S, Liu Z F 2011 Nat. Commun. 2 522
[4]	Pan Y, Zhang H G, Shi D X, Sun J T, Du S X, Liu F, Gao H J 2009 Adv. Mater. 21 2777
[5]	Mu R, Fu Q, Jin L, Yu L, Fang G, Tan D, Bao X H 2012 Angew. Chem. Int. Edit. 51 4856
[6]	Wu Z S, Feng X L, Cheng H M 2014 Natl. Sci. Rev. 1 277
[7]	Ju L, Velasco Jr J, Huang E, Kahn S, Nosiglia C, Tsai H, Yang W, Taniguchi T, Watanabe K, Zhang Y, Zhang G, Crommie M, Zettl A, Wang F 2014 Nat. Nanotechnol. 9 348
[8]	Yao Y, Ye F, Qi X L, Zhang S C, Fang Z 2007 Phys. Rev. B 75 041401(R)
[9]	Takeda K, Shiraish K 1994 Phys. Rev. B 50 14916
[10]	Xu M, Liang T, Shi M, Chen H 2013 Chem. Rev. 113 3766
[11]	Guzmn-Verri G G, Lew Yan Voon L C 2007 Phys. Rev. B 76 075131
[12]	Cahangirov S, Topsakal M, Aktrk E, Şhin H, Ciraci S 2009 Phys. Rev. Lett. 102 236804
[13]	Lebgue S, Eriksson O 2009 Phys. Rev. B 79 115409
[14]	Houssa M, Pourtois G, Afanas'ev V V, Stesmans A 2010 Appl. Phys. Lett. 96 082111
[15]	Houssa M, Pourtois G, Afanas'ev V V, Stesmans A 2010 Appl. Phys. Lett. 97 112106
[16]	Liu C C, Feng W, Yao Y 2011 Phys. Rev. Lett. 107 076802
[17]	Liu C C, Jiang H, Yao Y 2011 Phys. Rev. B 84 195430
[18]	Tao L, Cinquanta E, Chiappe D, Grazianetti C, Fanciulli M, Dubey M, Molle A, Akinwande D 2015 Nat. Nanotechnol. 10 227
[19]	Roome N J, David Carey J 2014 ACS Appl. Mater. Interfaces 6 7743
[20]	Nijamudheen A, Bhattacharjee R, Choudhury S, Datta A 2015 J. Phys. Chem. C 119 3802
[21]	Trivedi S, Srivastava A, Kurchania R 2014 J. Comput. Theor. Nanosci. 11 1
[22]	Ye M, Quhe R, Zheng J, Ni Z, Wang Y, Yuan Y, Tse G, Shi J, Gao Z, L J 2014 Physica E 59 60
[23]	Zhuang J, Gao N, Li Z, Xu X, Wang J, Zhao J, Dou S X, Du Y 2017 ACS Nano 11 3553
[24]	Li S, Zhang C, Ji W, Li F, Wang P, Hu S, Yan S, Liu Y 2014 Phys. Chem. Chem. Phys. 16 15968
[25]	Si C, Liu J, Xu Y, Wu J, Gu B L, Duan W 2014 Phys. Rev. B 89 115429
[26]	Ni Z, Liu Q, Tang K, Zheng J, Zhou J, Qin R, Gao Z, Yu D, Lu J 2012 Nano Lett. 12 113
[27]	Xia W, Hu W, Li Z, Yang J L 2014 Phys. Chem. Chem. Phys. 16 22495
[28]	Kaloni T P 2014 J. Phys. Chem. C 118 25200
[29]	Kaneko S, Tsuchiya H, Kamakura Y, Mori N, Matsuto O 2014 Appl. Phys. Express 7 035102
[30]	Cahangirov S, Topsakal M, Ciraci S 2010 Phys. Rev. B 81 195120
[31]	Pang Q, Zhang Y, Zhang J M, Ji V, Xu K W 2011 Nanoscale 3 4330
[32]	Kaloni T P, Schwingenschlgla U 2013 J. Appl. Phys. 114 184307
[33]	Ma Y, Dai Y, Niu C, Huang B 2012 J. Mater. Chem. 22 12587
[34]	Wu S C, Shan G, Yan B 2014 Phys. Rev. Lett. 113 256401
[35]	Zlyomi V, Wallbank J R, Fal'ko V I 2014 2D Mater. 1 011005
[36]	Yu W, Yan J, Gao S 2015 Nanoscale Res. Lett. 10 351
[37]	Jiang S, Butler S, Bianco E, Restrepo O D, Windl W, Goldberger J E 2014 Nat. Commun. 5 3389
[38]	Feng B, Ding Z, Meng S, Yao Y, He X, Cheng P, Chen L, Wu K H 2012 Nano Lett. 12 3507
[39]	Vogt P, de Padova P, Quaresima C, Avila J, Frantzeskakis E, Carmen Asensio M, Resta A, Ealet B, Le Lay G 2012 Phys. Rev. Lett. 108 155501
[40]	Fleurence A, Friedlein R, Ozaki T, Kawai H, Wang Y, Yamada-Takamura Y 2012 Phys. Rev. Lett. 108 245501
[41]	Meng L, Wang Y, Zhang L, Du S, Wu R, Li L, Zhang Y, Li G, Zhou H, Hofer W A, Gao H J 2013 Nano Lett. 13 685
[42]	Bianco E, Butler S, Jiang S, Restrepo O D, Windl W, Goldberger J E 2013 ACS Nano 7 4414
[43]	Li L, Zhao M W 2013 Phys. Chem. Chem. Phys. 15 16853
[44]	Li L, Lu S, Pan J, Qin Z, Wang Y, Wang Y, Cao G, Du S, Gao H J 2014 Adv. Mater. 26 4820
[45]	Dvila M E, Xian L, Cahangirov S, Rubio A, Le Lay G 2014 New J. Phys. 16 095002
[46]	Derivaz M, Dentel D, Stephan R, Hanf M C, Mehdaoui A, Sonnet P, Pirri C 2015 Nano Lett. 15 2510
[47]	Fukaya Y, Matsuda I, Feng B, Mochizuki I, Hyodo T, Shamoto S 2016 2D Mater. 3 035019
[48]	Zhang L, Bampoulis P, van Houselt A, Zandvliet H J W 2015 Appl. Phys. Lett. 107 111605
[49]	Bampoulis P, Zhang L, Safaei A, van Gastel R, Poelsema B, Zandvliet H J W 2014 J. Phys. Condens. Matter 26 442001
[50]	Lin C L, Arafune R, Kawahara K, Kanno M, Tsukahara N, Minamitani E, Kim Y, Kawai M, Takagi N 2013 Phys. Rev. Lett. 110 076801
[51]	Guo Z, Furuya S, Iwata J, Oshiyama A 2013 Phys. Rev. B 87 235435
[52]	Wang Y, Li J, Xiong J, Pan Y, Ye M, Guo Y, Zhang H, Quhe R, Lu J 2016 Phys. Chem. Chem. Phys. 18 19451
[53]	Mahatha S K, Moras P, Bellini V, Sheverdyaeva P M, Struzzi C, Petaccia L, Carbone C 2014 Phys. Rev. B 89 201416
[54]	Chen M X, Zhong Z, Weinert M 2016 Phys. Rev. B 94 075409
[55]	Qin Z H, Pan J B, Lu S Z, Shao Y, Wang Y L, Du S X, Gao H J, Cao G Y 2017 Adv. Mater. 29 1606046
[56]	Dvila M E, Le Lay G 2016 Sci. Rep. 6 20714
[57]	Cai Y, Chuu C P, Wei C M, Chou M Y 2013 Phys. Rev. B 88 245408
[58]	Li X, Wu S, Zhou S, Zhu Z 2014 Nano. Res. Lett. 9 110
[59]	Persichetti L, Jardali F, Vach H, Sgarlata A, Berbezier I, De Crescenzi M, Balzarotti A 2016 J. Phys. Chem. Lett. 7 3246
[60]	Zhang L, Bampoulis P, Rudenko A N, Yao Q, van Houselt A, Poelsema B, Katsnelson M I, Zandvliet H J W 2016 Phys. Rev. Lett. 116 256804
[61]	Katsnelson M I, Fasolino A 2013 Acc. Chem. Res. 46 97
[62]	Zhang D, Lou W, Miao M, Zhang S C, Chang K 2013 Phys. Rev. Lett. 111 156402

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