用一种新的装配方式制备单畴GdBCO超导块材

李国政; 杨万民

doi:10.7498/aps.60.037401

摘要

在顶部籽晶熔渗生长工艺(TSIG)的基础上,采用一种新的装配方式制备单畴Gd-Ba-Cu-O(GdBCO)超导块材,并对所得样品的形貌、微观结构以及超导性能进行了研究.结果表明,应用新的装配方式可以提高液相源块的支撑能力,有效避免样品在热处理过程中的倾斜或坍塌现象,从而提高了样品制备过程的稳定性和可重复性.此外,应用新的装配方式还有助于GdBCO样品的完整生长.

关键词:

Based on the top seeded infiltration and growth technique (TSIG), a novel configuration was employed to fabricate single-domain Gd-Ba-Cu-O (GdBCO) bulk superconductors. And the morphology, microstructure, and superconducting properties of the products were investigated in detail. The results indicate that, employing the novel configuration can increase the supporting ability of the liquid source pellet, and the slope or collapse of the sample during the heat treatment process can be effectively avoided, thus the stability and repeatability of the experiments are advanced. In addition, the novel configuration also contributes to the complete growth of the whole bulk.

Keywords:

作者及机构信息

1.
陕西师范大学物理学与信息技术学院,西安 710062

基金项目: 国家自然科学基金(批准号: 50872079)、国家高技术研究发展计划 (863计划) (批准号: 2007AA03Z241)和中央高校基本科研业务费专项资金 (批准号: 2010ZYGX021; GK200901017)资助的课题.

Authors and contacts

1.
College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, China

参考文献

[1]	Sha J J, Yao Z W, Yu J N, Yu G, Luo J H, Wen H H, Yang W L, Li S L 2000 Acta Phys. Sin. 49 1356 (in Chinese) [沙建军、姚仲文、郁金南、郁刚、罗金汉、闻海虎、杨万里、李世亮 2000 49 1356]
[2]	Cardwell D A 1998 Mater. Sci. Eng. B 53 1
[3]	Ding F Z, Lü X D, Gu H W, Li T, Cao J L 2009 Chin. Phys. B 18 1631
[4]	Cai Y Q, Yao X, Li G 2006 Acta Phys. Sin. 55 844 (in Chinese) [蔡衍卿、姚忻、李刚 2006 55 844]
[5]	Zhang Y L, Yao X, Zhang H, Jin Y P 2005 Acta Phys. Sin. 54 3380 (in Chinese) [张玉龙、姚忻、张宏、金燕苹 2005 54 3380]
[6]	Xu C Y, Shi L, Zuo J, Pang W H, Zhang Y L 1996 Acta Phys. Sin. 45 893 (in Chinese) [许存义、石磊、左健、庞文华、张裕恒 1996 45 893]
[7]	Shen C X, Shen X L, Lu W, Dong X L, Li Z C, Xiong J W, Zhou F 2008 Chin. Phys. B 17 1425
[8]	Shabna R, Sarun P M, Vinu S, Syamaprasad U 2009 Chin. Phys. B 18 4000
[9]	Chen Y L, Chan H M, Harmer M P, Todt V R, Sengupta S, Shi D 1994 Physica C 234 232
[10]	Reddy E S, Rajasekharan T 1998 Supercond. Sci. Technol. 11 523
[11]	Meslin S, Noudem J G 2004 Supercond. Sci. Technol. 17 1324
[12]	Babu N H, Iida K, Shi Y, Cardwell D A 2005 Appl. Phys. Lett. 87 202506
[13]	Meslin S, Harnois C, Chateigner D, Ouladdiaf B, Chaud X, Noudem J G 2005 J. Eur. Ceram. Soc. 25 2943
[14]	Iida K, Babu N H, Shi Y, Cardwell D A 2006 Supercond. Sci. Technol. 19 S478
[15]	Li G Z, Yang W M, Cheng X F, Fan J, Guo X D 2009 J. Mater. Sci. 44 6423
[16]	Li G Z, Yang W M 2010 Acta Phys. Sin. 59 5028 (in Chinese) [李国政、杨万民 2010 59 5028]
[17]	Yang W M, Zhou L, Feng Y, Zhang P X, Zhang C P 2006 J. Alloys Compd. 415 276
[18]	http: //rsbweb. nih. gov/ij/
[19]	Iida K, Babu N H, Shi Y, Cardwell D A 2005 Supercond. Sci. Technol. 18 1421
[20]	Iida K, Babu N H, Withnell T D, Shi Y, Haindl S, Weber H W, Cardwell D A 2006 Physica C 445-448 277
[21]	Babu N H, Iida K, Shi Y, Cardwell D A 2006 Physica C 445-448 286
[22]	Li G Z, Yang W M, Tang Y L, Ma J 2010 Cryst. Res. Technol. 45 219
[23]	Muralidhar M, Murakami M 2002 Supercond. Sci. Technol. 15 683
[24]	Iida K, Babu N H, Shi Y H, Cardwell D A, Murakami M 2006 Supercond. Sci. Technol. 19 641
[25]	Oda M, Yao X, Yoshida Y, Ikuta H 2009 Supercond. Sci. Technol. 22 075012
[26]	Murakami M, Sakai N, Higuchi T, Yoo S I 1996 Supercond. Sci. Technol. 9 1015
[27]	Chen S Y, Hsiao Y S, Chen C L, Yan D C, Chen I G, Wu M K 2008 Mater. Sci. Eng. B 151 31
[28]	Dai J Q, Zhao Z X 2008 Journal of Inorganic materials 23 309 (in Chinese) [代建清、赵忠贤 2008 无机材料学报 23 309]
[29]	Koblischka M R, Muralidhar M, Murakami M 1999 Mater. Sci. Eng. B 65 58
[30]	Koblischka M R, van Dalen A J J, Higuchi T, Yoo S I, Murakami M 1998 Phys. Rev. B 58 2863
[31]	Hinai H, Nariki S, Seo S J, Sakai N, Murakami M, Otsuka M 2000 Supercond. Sci. Technol. 13 676

施引文献

[1]	Sha J J, Yao Z W, Yu J N, Yu G, Luo J H, Wen H H, Yang W L, Li S L 2000 Acta Phys. Sin. 49 1356 (in Chinese) [沙建军、姚仲文、郁金南、郁刚、罗金汉、闻海虎、杨万里、李世亮 2000 49 1356]
[2]	Cardwell D A 1998 Mater. Sci. Eng. B 53 1
[3]	Ding F Z, Lü X D, Gu H W, Li T, Cao J L 2009 Chin. Phys. B 18 1631
[4]	Cai Y Q, Yao X, Li G 2006 Acta Phys. Sin. 55 844 (in Chinese) [蔡衍卿、姚忻、李刚 2006 55 844]
[5]	Zhang Y L, Yao X, Zhang H, Jin Y P 2005 Acta Phys. Sin. 54 3380 (in Chinese) [张玉龙、姚忻、张宏、金燕苹 2005 54 3380]
[6]	Xu C Y, Shi L, Zuo J, Pang W H, Zhang Y L 1996 Acta Phys. Sin. 45 893 (in Chinese) [许存义、石磊、左健、庞文华、张裕恒 1996 45 893]
[7]	Shen C X, Shen X L, Lu W, Dong X L, Li Z C, Xiong J W, Zhou F 2008 Chin. Phys. B 17 1425
[8]	Shabna R, Sarun P M, Vinu S, Syamaprasad U 2009 Chin. Phys. B 18 4000
[9]	Chen Y L, Chan H M, Harmer M P, Todt V R, Sengupta S, Shi D 1994 Physica C 234 232
[10]	Reddy E S, Rajasekharan T 1998 Supercond. Sci. Technol. 11 523
[11]	Meslin S, Noudem J G 2004 Supercond. Sci. Technol. 17 1324
[12]	Babu N H, Iida K, Shi Y, Cardwell D A 2005 Appl. Phys. Lett. 87 202506
[13]	Meslin S, Harnois C, Chateigner D, Ouladdiaf B, Chaud X, Noudem J G 2005 J. Eur. Ceram. Soc. 25 2943
[14]	Iida K, Babu N H, Shi Y, Cardwell D A 2006 Supercond. Sci. Technol. 19 S478
[15]	Li G Z, Yang W M, Cheng X F, Fan J, Guo X D 2009 J. Mater. Sci. 44 6423
[16]	Li G Z, Yang W M 2010 Acta Phys. Sin. 59 5028 (in Chinese) [李国政、杨万民 2010 59 5028]
[17]	Yang W M, Zhou L, Feng Y, Zhang P X, Zhang C P 2006 J. Alloys Compd. 415 276
[18]	http: //rsbweb. nih. gov/ij/
[19]	Iida K, Babu N H, Shi Y, Cardwell D A 2005 Supercond. Sci. Technol. 18 1421
[20]	Iida K, Babu N H, Withnell T D, Shi Y, Haindl S, Weber H W, Cardwell D A 2006 Physica C 445-448 277
[21]	Babu N H, Iida K, Shi Y, Cardwell D A 2006 Physica C 445-448 286
[22]	Li G Z, Yang W M, Tang Y L, Ma J 2010 Cryst. Res. Technol. 45 219
[23]	Muralidhar M, Murakami M 2002 Supercond. Sci. Technol. 15 683
[24]	Iida K, Babu N H, Shi Y H, Cardwell D A, Murakami M 2006 Supercond. Sci. Technol. 19 641
[25]	Oda M, Yao X, Yoshida Y, Ikuta H 2009 Supercond. Sci. Technol. 22 075012
[26]	Murakami M, Sakai N, Higuchi T, Yoo S I 1996 Supercond. Sci. Technol. 9 1015
[27]	Chen S Y, Hsiao Y S, Chen C L, Yan D C, Chen I G, Wu M K 2008 Mater. Sci. Eng. B 151 31
[28]	Dai J Q, Zhao Z X 2008 Journal of Inorganic materials 23 309 (in Chinese) [代建清、赵忠贤 2008 无机材料学报 23 309]
[29]	Koblischka M R, Muralidhar M, Murakami M 1999 Mater. Sci. Eng. B 65 58
[30]	Koblischka M R, van Dalen A J J, Higuchi T, Yoo S I, Murakami M 1998 Phys. Rev. B 58 2863
[31]	Hinai H, Nariki S, Seo S J, Sakai N, Murakami M, Otsuka M 2000 Supercond. Sci. Technol. 13 676

[1]	李国政, 王妙. 纳米CeO₂掺杂的YBCO超导块材的制备及其性能. , 2024, 73(19): 197402. doi: 10.7498/aps.73.20240832
[2]	宋萌萌, 周前红, 孙强, 张含天, 杨薇, 董烨. 电子散射和能量分配方式对电子输运系数的影响. , 2021, 70(13): 135101. doi: 10.7498/aps.70.20202021
[3]	王妙, 杨万民, 王小梅, 昝雅婷, 陈森林, 张明, 胡成西. 二次单畴化制备GdBCO超导块材的方法及其性能. , 2021, 70(15): 158101. doi: 10.7498/aps.70.20202141
[4]	马俊, 陈章龙, 县涛, 魏学刚, 杨万民, 陈森林, 李佳伟. 空心圆柱形永磁体内径对单畴GdBCO超导块材磁悬浮力的影响. , 2018, 67(7): 077401. doi: 10.7498/aps.67.20172418
[5]	王妙, 邬华春, 杨万民, 杨芃焘, 王小梅, 郝大鹏, 党文佳, 张明, 胡成西. BaO掺杂对单畴GdBCO超导块材性能的影响(二). , 2017, 66(16): 167401. doi: 10.7498/aps.66.167401
[6]	王妙, 杨万民, 杨芃焘, 王小梅, 张明, 胡成西. BaO掺杂对单畴GdBCO超导块材性能的影响. , 2016, 65(22): 227401. doi: 10.7498/aps.65.227401
[7]	胡强, 贾晓鹏, 李尚升, 宿太超, 胡美华, 房超, 张跃文, 李刚, 刘海强, 马红安. 高压熔渗生长法制备金刚石聚晶中碳的转化机制研究. , 2016, 65(6): 068101. doi: 10.7498/aps.65.068101
[8]	郭莉萍, 杨万民, 郭玉霞, 陈丽平, 李强. Ni2O3掺杂对新固相源顶部籽晶熔渗生长法制备单畴GdBCO超导块材超导性能的影响. , 2015, 64(7): 077401. doi: 10.7498/aps.64.077401
[9]	马俊, 杨万民, 王妙, 陈森林, 冯忠岭. 辅助永磁体磁化方式对单畴GdBCO超导块材捕获磁场分布及其磁悬浮力的影响. , 2013, 62(22): 227401. doi: 10.7498/aps.62.227401
[10]	马俊, 杨万民, 李佳伟, 王妙, 陈森林. 辅助永磁体的引入方式对单畴GdBCO超导块材磁场分布及其磁悬浮力的影响. , 2012, 61(13): 137401. doi: 10.7498/aps.61.137401
[11]	马俊, 杨万民. 条状永磁体的组合形式及间距对单畴GdBCO超导体磁悬浮力的影响. , 2011, 60(7): 077401. doi: 10.7498/aps.60.077401
[12]	马俊, 杨万民, 李国政, 程晓芳, 郭晓丹. 永磁体辅助下单畴GdBCO超导体和永磁体之间的磁悬浮力研究. , 2011, 60(2): 027401. doi: 10.7498/aps.60.027401
[13]	李国政, 杨万民. 单畴GdBCO超导块材制备方法的改进及超导特性研究. , 2011, 60(4): 047401. doi: 10.7498/aps.60.047401
[14]	李国政, 杨万民. 用顶部籽晶熔渗生长工艺由新成分液相源制备单畴GdBCO超导块材. , 2010, 59(7): 5028-5034. doi: 10.7498/aps.59.5028
[15]	杨吉军, 徐可为. 多晶薄膜表面粗化与生长方式转变. , 2007, 56(2): 1110-1115. doi: 10.7498/aps.56.1110
[16]	龙文元, 蔡启舟, 魏伯康, 陈立亮. 相场法模拟多元合金过冷熔体中的枝晶生长. , 2006, 55(3): 1341-1345. doi: 10.7498/aps.55.1341
[17]	牟威圩, 许小亮. 感染生长模型的逾渗模拟. , 2006, 55(6): 2871-2876. doi: 10.7498/aps.55.2871
[18]	杨宇光, 温巧燕, 朱甫臣. 一种新的利用不可扩展乘积基和严格纠缠基的量子密钥分配方案. , 2005, 54(12): 5549-5553. doi: 10.7498/aps.54.5549
[19]	金蔚青, 小松启, 井上哲夫. 熔体生长水杨酸苯脂晶体的形貌. , 1987, 36(1): 29-36. doi: 10.7498/aps.36.29
[20]	刘寄浙, 金通政, 刘公强. GGG单晶的助熔生长与成核温度的确定. , 1980, 29(1): 117-121. doi: 10.7498/aps.29.117

计量

文章访问数: 7953
PDF下载量: 649
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板