Controllable synthesis of two-dimensional ferroelectric α-In<sub>2</sub>Se<sub>3</sub> by low-temperature chemical vapor deposition

WANG Chengyang; LI Yuexin; HE Yanyan; LI Mei; ZHONG Lun; JIE Wenjing

doi:10.7498/aps.74.20251070

Abstract

Two-dimensional ferroelectric α-In₂Se₃ possesses many fascinating physical properties. However, chemical-vapor-deposited ferroelectric α-In₂Se₃ typically requires high temperatures (>650 ℃). In this work, α-In₂Se₃ is synthesized at 400 to 460 ℃ by introducing a KCl/LiCl/NH₄Cl ternary catalyst, resulting in a 200 ℃ reduction in growth temperature compared with ferroelectric α-In₂Se₃ synthesized by the traditional chemical vapor deposition (CVD) method. The surface morphology of the as-prepared material is controlled by temperature and gas flow rate. As the growth temperature increases from 400 to 460 ℃, the synthesized α-In₂Se₃ is changed from discrete hexagonal flakes to a continuous and uniform thin film, which is confirmed by the scanning electron microscope. Raman spectroscopy shows that the characteristic peaks of In₂Se₃ are located at 103, 180, and 195 cm^–1, respectively, indicating that the CVD-grown In₂Se₃ is α-phase. Furthermore, energy dispersive spectrometer and X-ray photoelectron spectroscopy indicate that the elemental composition is close to the ideal stoichiometric ratio, confirming the successful synthesis of the α-In₂Se₃. Then, the as-prepared α-In₂Se₃ is transferred onto Si/SiO₂ substrate for device fabrication. Atomic force microscope indicates that the film is uniform, with an approximate thickness of 63 nm. The fabricated two-terminal memristors exhibit analogous resistive switching behaviors. And such memristors are used to achieve synaptic functions of long-term potentiation/long-term depression. For artificial neural network simulations based on the synaptic memristors, the recognition accuracy for hand-written digit image exceeds 90%. This work provides a practical method for growing two-dimensional ferroelectric α-In₂Se₃ at low temperatures for applications in synaptic devices and neuromorphic computing.

Keywords:

Authors and contacts

1.
College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
2.
School of Microelectronics, South China University of Technology, Guangzhou 511442, China

Corresponding author: JIE Wenjing, wenjing.jie@sicnu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 62474118, 52233014).

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References

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Cited By

图 1 CVD 法制备二维α-In₂Se₃材料的示意图

Figure 1. Schematic diagram of the CVD synthesis of two-dimensional α-In₂Se₃ material.

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图 2 不同生长温度下制备得到的α-In₂Se₃的拉曼光谱图

Figure 2. Raman spectra of α-In₂Se₃ synthesized at different growth temperatures.

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图 3 (a)—(d) 在20 mL/min (标准状况)气体流量、不同生长温度下, 生长的In₂Se₃薄片光学显微图; (e)—(h) 在440 ℃、不同气体流量(标准状况)下, 生长的In₂Se₃薄片光学显微图

Figure 3. (a)–(d) Optical images of In₂Se₃ flakes grown at gas flow rate of 20 mL/min (standard condition) and different growth temperature; (e)–(h) optical images of In₂Se₃ flakes grown at 440 ℃ and different gas flow rate (standard condition).

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图 4 (a)—(d) 各个温度生长的In₂Se₃的SEM图; (e) 各元素百分比含量

Figure 4. (a)–(d) SEM images of In₂Se₃ grown at various temperatures; (e) percentage content of each element.

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图 5 (a) In 3d_3/2和In 3d_5/2的XPS能谱; (b) Se 3d_3/2和Se 3d_5/2的XPS能谱; (c) 合成α-In₂Se₃的XPS能谱; (d) α-In₂Se₃ AFM图像及对应的高度剖面图

Figure 5. (a) XPS spectra of In 3d_3/2 and In 3d_5/2; (b) XPS spectra of Se 3d_3/2 and Se 3d_5/2; (c) XPS spectrum of synthesized α-In₂Se₃; (d) AFM image of the α-In₂Se₃ and corresponding height profile.

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图 6 Au/α-In₂Se₃/Au忆阻器的10个循环周期的I-V特性曲线(插图为器件结构示意图)

Figure 6. I-V characteristic curves of the Au/α-In₂Se₃/Au memristor for 10 cycles (inset shows a schematic diagram of the device structure).

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图 7 20组重复的相同大小的电脉冲诱导的LTP/LTD行为

Figure 7. LTP/LTD behavior induced by 20 sets of repetitive identical-sized electrical pulses.

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图 8 (a) 3层神经网络ANN示意图; (b) 8×8像素的识别精度; (c) 28×28像素的识别精度

Figure 8. (a) Schematic structure of three-layer neural network ANN structure; (b) recognition accuracy of 8×8 pixels; (c) recognition accuracy of 28×28 pixels.

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表 1 不同条件合成α-In₂Se₃

Table 1. Synthesis of α-In₂Se₃ under different conditions.

In源	Se源	催化剂	衬底	文献
In₂O₃ (650—750 ℃)	Se粉(300 ℃)	无	mica	[17]
In₂O₃ (680—750 ℃)	Se粉(250 ℃)	无	mica	[18]
In₂O₃ (700—900 ℃)	Se粉	无	mica	[19]
In₂O₃ (630 ℃)	Se粉(250 ℃)	无	mica	[20]
In₂O₃ (850 ℃)	Se粉(270 ℃)	无	SiO₂/Si	[14]
In₂O₃ (550/650 ℃)	Se粉(270 ℃)	无	SiO₂/Si	[21]
In₂O₃ (670 ℃)	Se粉(250 ℃)	无	mica	[22]
In₂Se₃ (850 ℃)	—	无	SiO₂/Si	[23]
In₂O₃ (660 ℃)	Se粉(350 ℃)	无	mica	[24]
In₂O₃ (660 ℃)	Se粉(300 ℃)	无	mica	[25]
InCl₃ (400—460 ℃)	Se粉(300 ℃)	KCl/NaCl/ NH₄Cl	SiO₂/Si	本工作

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map

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[21]	Zhang Z, Shi L, Wang B, Qu J Y, Wang X L, Wang T, Jiang Q T, Xue W H, Xu X H 2025 Chin. Chem. Lett. 36 109687 Google Scholar
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[24]	Feng W, Zheng W, Gao F, Chen X S, Liu G B, Hasan T, Cao W W, Hu P A 2016 Chem. Mater. 28 4278 Google Scholar
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[26]	Sangster J, Pelton A D 1987 J. Phys. Chem. Ref. Data 16 509 Google Scholar
[27]	Li Z L, Zhou J Y, Wang Z P, Gu J H, Zhang Y W, Wei Y X 2012 Adv. Mater. Res. 567 41 Google Scholar
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Controllable synthesis of two-dimensional ferroelectric α-In₂Se₃ by low-temperature chemical vapor deposition

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Corresponding author: JIE Wenjing, wenjing.jie@sicnu.edu.cn

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Controllable synthesis of two-dimensional ferroelectric α-In2Se3 by low-temperature chemical vapor deposition

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Controllable synthesis of two-dimensional ferroelectric α-In₂Se₃ by low-temperature chemical vapor deposition