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双态转换材料可在两稳定状态间可逆切换，是下一代信息存储、光电器件与量子调控的核心载体。高压因其通用性与可控性，可用于调控晶体结构、晶体场与电子结构，是实现多种物理性质双态转换的有效外场手段。本文综述了利用高压技术实现材料光、电等双态转换现象的研究进展，包括压致倍频转换、发光/变色转换、绝缘体-金属相变，半导体载流子类型的n-p转换和自旋交叉的调控，并重点讨论其中的构效关系研究以及原位表征方法。此外，部分体系还可在更复杂能量势面上表现出多态转换特征，可视作双态调控的延伸，为实现多进制信息编码与高密度数据存储提供新的可能。最后针对该领域目前在低压化与器件化和相变的可逆性等方向面临的困难，提出发展金刚石对顶砧集成微纳电极、光纤耦合及片上高压腔、降低转换压力到实用范围等潜在方向，以推动双态材料在超低功耗存储与可重构光电器件中的工程化应用。Bistable switching materials that enable reversible transitions between distinct stable states have emerged as a transformative platform for next-generation information technologies, optoelectronics, and quantum control. The application of high pressure serves as a powerful and precisely tunable stimulus for manipulating crystal structures, electronic configurations, and crystal fields, thereby enabling deterministic switching of diverse physical properties. This review systematically examines recent advances in pressure-induced bistable transitions, encompassing nonlinear optical switching via symmetry breaking, luminescence and color transitions mediated by bandgap engineering, insulator-metal transitions driven by electronic correlation effects, semiconductor carrier-type inversion, and spin crossover phenomena. Through comprehensive analysis integrating in situ high-pressure characterization techniques including synchrotron X-ray diffraction, vibrational spectroscopy, spatially resolved photoluminescence mapping, nonlinear optical microscopy, and transport measurements, we establish quantitative correlations between structural evolution, local coordination changes, and macroscopic switching responses. These multimodal investigations reveal fundamental mechanisms governing bistable transitions, particularly highlighting the critical roles of pressure-controlled symmetry breaking, coordination reconstruction, lone-pair stereochemical activity, and electronic correlation tuning. Notably, certain material systems exhibit extended multistate switching characteristics on complex energy landscapes, offering promising avenues for advanced applications in high-density data storage beyond conventional bistability. However, practical implementation faces significant challenges including the relatively high switching pressures required, limited reversibility in some systems, and difficulties in device integration. To solve current challenges, we proposed potential solutions including the development of diamond anvil cell-integrated micro/nanoelectrodes, fiber-optic coupled on-chip high-pressure cells, and strategies to reduce switching pressures to practical ranges. This work provides fundamental insights into the mechanisms of pressure-driven state switching while simultaneously outlining practical pathways toward realizing devices and reconfigurable optoelectronic systems. The integration of advanced in situ characterization techniques with theoretical understanding offers a robust framework for both fundamental research and technological applications of bistable switching materials under pressure.
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Keywords:
- High Pressure /
- Bistable Switching /
- Property Modulation /
- Structure-Property Relationship /
- Spin Crossover
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