Research progress of spin light emitting diode

Liang Shi-Heng; Lu Yuan; Han Xiu-Feng

doi:10.7498/aps.69.20200866

Abstract

After more than 20 years of development, semiconductor spintronics has become an important and interdisciplinary research filed of spin-based physics, materials and phenomenon. Spin light emitting diode (spin LED) is one of the fascinating topics in semiconductor spintronic, and it is also one of devices in which the radiative recombination of spin-polarized carriers results in luminescence exhibiting a net circular polarization. The research of spin LED involves the studies of materials, structures, and spin based physics in spin injector and active region. The spin injection, spin transport, and spin detection are key factors for understanding the spin based physics in spin LED. Here in this paper, we comprehensively review the current research status and the latest results. Finally, we also discuss the future research trend.

Keywords:

Authors and contacts

1.
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2.
Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China
3.
Institute Jean Lamour, Centre National de la Recherche Scientifique, Nancy 54011, France
4.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Lu Yuan, yuan.lu@univ-lorraine.fr ; Han Xiu-Feng, xfhan@iphy.ac.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0206200), the Key Program of the National Natural Science Foundation of China (Grant No. 51831012), the Key Joint Program of China-France of the National Natural Science Foundation (Grant No. 51620105004), the Strategic Priority Research Program (B) of Chinese Academy of Sciences (Grant No. XDB33000000), the Key Research Program of Frontier Sciences and the International Partnership Program of Chinese Academy of Sciences (Grant No. QYZDJ-SSW-SLH016), the Beijing Natural Science Foundation of China (Grant No. Z201100004220006), and the Joint ANR-NSFC SISTER Project (Grant Nos. ANR-11-IS10-0001, NNSFC61161130527)

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References

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Cited By

图 1 Spin LED能带结构示意图^[7]

Figure 1. Schematic of band diagram of spin LED^[7]

DownLoad: Full-Size Img PowerPoint

图 2 自旋发光二极管的电致发光中偏振光测量系统原理示意图

Figure 2. Schematic diagram of electroluminescence measurement system for spin LED

DownLoad: Full-Size Img PowerPoint

图 3 Spin LED中时间分辨光致发光系统原理示意图

Figure 3. Schematic diagram of time-resolved photoluminescence system

DownLoad: Full-Size Img PowerPoint

图 4 (a) EY和(b) DP自旋弛豫机制示意图^[11]

Figure 4. Spin relaxation by scattering in (a) EY and (b) DP mechanisms^[11].

DownLoad: Full-Size Img PowerPoint

图 5 圆偏振光极化率随自旋注入层到有源发光区之间长度关系^[12]

Figure 5. Calculated circular polarization for fully perpendicular magnetization in remanence over injection path length^[12].

DownLoad: Full-Size Img PowerPoint

图 6 在闪锌矿GaAs直接带隙能带中的光选择定则　(a)体材料及(b)量子阱中的电子空穴复合选择定则. 上边蓝色球代表电子, 下边的红色球代表空穴, 箭头代表自旋方向. 其中CB代表导带, HH代表重空穴带, LH代表轻空穴带, HH是三重简并态, LH是单态. $ {\mathrm{\sigma }}^{-} $和$ {\mathrm{\sigma }}^{+} $分别代表左旋光与右旋光. 在量子阱结构中由于晶格应变和结构限制, 电子与LH态空穴的复合几率被大大抑制^[1]

Figure 6. Electric dipole allowed radiative inter-band transitions and corresponding optical polarization for the cases of (a) bulk material with degenerate heavy- and light-hole bands and (b) a quantum well in which epitaxial strain and quantum confinement have lifted the heavy- and light-hole band degeneracy^[1].

DownLoad: Full-Size Img PowerPoint

图 7 GaAs量子阱自旋发光二极管中 (a)温度依赖的P_C特性和(b)温度依赖的τ_s, τ及F因子特性^[8]

Figure 7. (a) Temperature dependence of P_C, (b) temperature dependence of τ_s, τ, and the F factor in GaAs quantum well spin LED^[8].

DownLoad: Full-Size Img PowerPoint

图 8 自旋发光二极管的Faraday测试方法示意图^[1]

Figure 8. Schematic representation of a spin LED under the Faraday geometries^[1].

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图 9 Gerhardt等^[24]利用具有垂直磁各向异性的FeTb作为自旋注入端的自旋发光二极管　(a)结构示意图; (b)电致发光与磁场的关系, 他们在未加磁场剩余磁态下, 在90 K下得到了0.7%的圆偏振光极化率

Figure 9. Schematic Spin LED device structure of the LED with Tb/Fe multilayer (a) reported by Gerhardt et al.^[24], Circular polarization as a function of the applied magnetic field at 90 K (b), they observed P_C of 0.7%

DownLoad: Full-Size Img PowerPoint

图 10 (a) 基于垂直磁各向异性Ta/CoFeB/MgO为自旋注入端的自旋发光二极管结构示意图, 虚线选定区对应的TEM照片, 其中插图为缩小后的TEM照片; (b)温度依赖的圆偏振极化率及注入电子极化率; (c)温度依赖的F因子及载流子寿命$ \tau $、电子自旋弛豫时间$ {\tau }_{\mathrm{s}} $

Figure 10. (a) Schematic device structure of Spin LED and HR-TEM image of CoFeB/MgO PMA injector; (b) temperature dependence of P_C without magnetic field and with 0.4 T field. Temperature dependence of P_E is calculated by P_E = P_C/F from the data without field; (c) temperature dependence of τ_S, τ, and F factor deduced from the TRPL measurements

DownLoad: Full-Size Img PowerPoint

图 11 退火400 °C后, 具有垂直磁各向异性的Ta/CoFeB/MgO (a)和Mo/CoFeB/MgO (b)自旋注入端中由HR-STEM-EELS测量的空间元素分布^[31]

Figure 11. Chemical characterization of spin-injectors annealed at 400 °C. Dark field HR-STEM images and corresponding EELS mappings and profiles for (a) Ta and (b) Mo injectors annealed at 400 °C^[31].

DownLoad: Full-Size Img PowerPoint

图 12 (a), (b)基于垂直各向异性的Ta/CoFeB/MgO作为自旋注入端InGaAs/GaAs量子点spin LED 的TEM及其结构示意图; (c) InGaAs/GaAs量子点AFM图; (d)零磁场下9 K观测到了约35%电致发光圆偏振光极化率^[32]

Figure 12. Spin LED device with p-doped InAs/GaAs quantum dots and polarization resolved electroluminescence of an ensemble of quantum dots: (a) High resolution-transmission electron microscope image of the injector Ta/CoFeB/MgO/GaAs; (b) schematic structure of the spin LED device. A single layer of InAs QDs is embedded in the intrinsic region of the p-i-n junction of the LED; (c) AFM image of InAs QDs; (d) strongly polarized single dot emission at zero applied field^[32].

DownLoad: Full-Size Img PowerPoint

图 13 基于(Ga, Mn)As自旋注入端、MoS₂/WeS₂有源区的自旋发光二极管结构示意图^[43]

Figure 13. Schematic of the monolayer TMDC/(Ga, Mn)As heterojunction for electrical valley polarization devices. (Ga, Mn)As was used as a spin aligner under an external magnetic field^[43].

DownLoad: Full-Size Img PowerPoint

表 1 基于面内磁各向异性自旋注入端的自旋发光二极管

Table 1. Spin LED based on spin injector with in-plane magnetic anisotropic.

自旋注入端	LED结构	P_C/T	文献	时间
Fe	InGaAs QW	2%/300 K	Zhu等^[16]	2001
Fe/(Al)GaAs	GaAs QW	32%/4.5 K	Hanbicki等^[19]	2002
CoFe/Al₂O₃	GaAs bulk	21%/80 K	Motsnyi等.^[20]	2002
CoFe/MgO	GaAs QW	52%/100 K	Jiang等^[15]	2005
Co/Al₂O₃	InAs QD	15%/1.7 K	Lombez等^[21]	2007
CoFeB/MgO	GaAs QW	32%/100 K	Lu等^[8]	2008
Fe/AlO_x	GaAs QW	18%/80 K	Wu等^[22]	2010
CoFeB/MgO	GaAs QW	25%/25 K	Barate等^[18]	2014
CoFeB/MgO	GaAs QW	23%(Sputtering), 18%(MBE)/25 K	Barate等^[23]	2017

DownLoad: CSV

表 2 基于垂直磁各向异性的自旋注入端的自旋发光二极管

Table 2. Spin LED based on spin injector with out-plane magnetic anisotropic.

自旋注入端	LED结构	Pc/T	文献	时间
FeTb	InGaAs QW	0.75%/90 K	Gerhardt等^[24]	2005
MnGa	AlGaAs QW	~3%/20 K	Adelmann等^[25]	2006
FeTb	AlGaAs QW	~3%/300 K	Hövel等^[26]	2008
CoPt	SiGe QW	~3%/5 K	Grenet等^[27]	2009
CoPt	GaAs QW	~2.5%/20 K	Zarpellon等^[28]	2012
Ta/CoFeB/MgO	GaAs QW	~20%/25 K, ~8%/RT	Liang等^[29]	2014
MgO/CoFeB/Ta/CoFeB/MgO	GaAs QW	~10%/10 K	Tao等^[30]	2016
Mo/CoFeB/MgO	GaAs QW	~9.5%/10 K	Tao等^[31]	2018
Ta/CoFeB/MgO	GaAs QD	35%/9 K	Cadiz等^[32]	2018

DownLoad: CSV

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Vol. 69, Issue 20 - 2020-10-20

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