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Performance of a nano-scale MOS (metal-oxide-semiconductor) can be significantly improved by uniaxial stress, caused by the SiN film deposited on the surface of MOS. Although this technique has been widely used in the performance improvement of CMOS and integrated circuit, the physical mechanism for instance, how is the strain in MOS channel caused by the SiN film? how about the relation between the kinds of the structure of SiN film needed to be discussed in depth. On the basis of the ISE TCAD, three typical models for stress analysis——such as the segmentation structure model, the closed-loop structure model and the integrity structure model——are proposed. And then, this paper reveals the physical mechanism about how the stress in MOS channel is caused by the SiN film and how much the magnitude of the stress in MOS channel is induced. Results shows that: 1) The “step” structure is the necessary condition for the strain in the MOS channel to be caused by the SiN film. 2) With the tendency for SiN film to shrink or expand, the film may lead to the deformation along the MOS source/drain region of the Si material, which causes the deformation of Si in the channel. 3) The whole of the channel stress in SiN film is equal to the sum of the stress in the source/drain imposed by the SiN film above the source/drain, the stress which the “closed loop structure” applies to the channel, and the stress generated in the channel by the whole SiN film. Our conclusions may provide the valuable references to the manufacture of nano-scaled MOS and the research of the novel inducing stress technique.
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Keywords:
- uniaxial-strain /
- metal-oxide-semiconductor transistor /
- silicon nitride /
- physical mechanism
[1] Bai M, Xuan R X, Song J J, Zhang H M, Hu H Y, Shu B 2015 J. Comput Theor Nanos 12 1610
[2] Wu W R, Liu Ch, Sun J B, Yu W J, Wang X, Shi Y, Zhao Y 2014 IEEE Electr Device L 35 714
[3] Liu W F, Song J J 2014 Acta Phys. Sin. 63 238501 (in Chinese) [刘伟峰, 宋建军 2014 63 238501]
[4] Cai W L, Takenaka M, Takagi S 2014 J. Appl. Phys. 115 094509
[5] Song J J, Yang Ch, Zhu H, Zhang H M, Xu R X, Hu H Y, Shu B 2014 Acta Phys. Sin. 63 118501 (in Chinese) [宋建军, 杨超, 朱贺, 张鹤鸣, 宣荣喜, 胡辉勇, 舒斌 2014 63 118501]
[6] EngSiew K A, Sohail I R 2013 J Comput Theor Nanos 10 1231
[7] Song J J, Yang Ch, Wang G Y, Zhou Ch Y, Wang B, Hu H Y, Zhang H M 2012 Jpn. J. Appl. Phys. 51 104301
[8] Song J J, Zhang H M, Hu H Y, Dian X Y, Xuan R X 2007 Chin. Phys. B 16 3827
[9] Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Sci. China Phys. Mech. 55 1399
[10] Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 61 057304]
[11] Huang J, Chang Sh T, Hsieh B F, Liao M H, Wang W C, Lee C C 2010 Thin Solid Films 518 241
[12] Yamashita T, Nishida Y, Okagaki T, Miyagawa Y 2008 Jpn. J. Appl. Phys. 47 2569
[13] Huang, H L, Chen J K, Houng M P 2013 Solid State Electron 79 31
[14] Sentaurus TCAD, G2012-06 Manual, Synopsys, Inc., Mountain View, CA, USA, 2012
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[1] Bai M, Xuan R X, Song J J, Zhang H M, Hu H Y, Shu B 2015 J. Comput Theor Nanos 12 1610
[2] Wu W R, Liu Ch, Sun J B, Yu W J, Wang X, Shi Y, Zhao Y 2014 IEEE Electr Device L 35 714
[3] Liu W F, Song J J 2014 Acta Phys. Sin. 63 238501 (in Chinese) [刘伟峰, 宋建军 2014 63 238501]
[4] Cai W L, Takenaka M, Takagi S 2014 J. Appl. Phys. 115 094509
[5] Song J J, Yang Ch, Zhu H, Zhang H M, Xu R X, Hu H Y, Shu B 2014 Acta Phys. Sin. 63 118501 (in Chinese) [宋建军, 杨超, 朱贺, 张鹤鸣, 宣荣喜, 胡辉勇, 舒斌 2014 63 118501]
[6] EngSiew K A, Sohail I R 2013 J Comput Theor Nanos 10 1231
[7] Song J J, Yang Ch, Wang G Y, Zhou Ch Y, Wang B, Hu H Y, Zhang H M 2012 Jpn. J. Appl. Phys. 51 104301
[8] Song J J, Zhang H M, Hu H Y, Dian X Y, Xuan R X 2007 Chin. Phys. B 16 3827
[9] Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Sci. China Phys. Mech. 55 1399
[10] Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 61 057304]
[11] Huang J, Chang Sh T, Hsieh B F, Liao M H, Wang W C, Lee C C 2010 Thin Solid Films 518 241
[12] Yamashita T, Nishida Y, Okagaki T, Miyagawa Y 2008 Jpn. J. Appl. Phys. 47 2569
[13] Huang, H L, Chen J K, Houng M P 2013 Solid State Electron 79 31
[14] Sentaurus TCAD, G2012-06 Manual, Synopsys, Inc., Mountain View, CA, USA, 2012
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