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In order to understand the influence of annealing temperature on PbSe quantum dots doped glass produced by a melt-annealing technique, experiments are carried out to compare the influences of different nucleation durations, crystallization temperatures and time on the particle size, distribution and absorption spectrum. Under the condition of the same nucleation temperatures and different crystallization temperatures, the transmission electron microscope images of all samples show that a certain quantity of PbSe crystals are crystallized in the glass. While the particle sizes and densities are slightly different. The calculated distribution of the particle sizes quantitatively indicates that the particle size will be enlarged with the increase of crystallization temperature and the crystal particle density. The measured absorption spectrum shows that the peak value of absorption spectrum increases gradually with increasing the crystallization temperature. At the same time, the peak value shows a red-shift phenomenon. While under the relatively low crystallization temperature, the infrared absorption peak cannot be obtained in spite that some crystals have grown inside the glass. The absorption spectrum is covered up by the background signals because of the relatively smaller particle size and density. This work will be benefit of producing different size quantum dots with a certain density, and realizing stronger absorption and emission in multiband.
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Keywords:
- PbSe quantum dots /
- particle size /
- annealing temperature /
- absorption spectrum
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[17] Jiang H L, Cheng C, Ma D W 2011 J. Optoelectron. Laser 22 872 (in Chinese) [江惠绿, 程成, 马德伟 2011 光电子·激光 22 872]
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[19] Huang W 2008 M. S. Dissertation (Hangzhou: Zhejiang University) (in Chinese) [黄纬 2008 硕士学位论文(杭州: 浙江大学)]
[20] Yang Y, Zhang H, Cheng C 2013 J. Opt. Soc. Am. B 30 3022
[21] Zhang W J, Zhai B C, Xu J 2012 Chin. J. Luminescence 33 1171 (in Chinese) [张文君, 翟保才, 许键 2012 发光学报 33 1171]
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[1] Zhang P J, Sun H Q, Guo Z Y, Wang D Y, Xie X Y, Cai J X, Zheng H, Xie N, Yang B 2013 Acta Phys. Sin. 62 117304 (in Chinese) [张盼君, 孙慧卿, 郭志友, 王度阳, 谢晓宇, 蔡金鑫, 郑欢, 谢楠, 杨斌 2013 62 117304]
[2] Sheng L, Li H C, Yang Y Y, Sheng D N, Xing D Y 2013 Chin. Phys. B 22 067201
[3] Xu T N, Wu H Z, Si J X 2008 Acta Phys. Sin. 57 2574 (in Chinese) [徐天宁, 吴惠桢, 斯剑霄 2008 57 2574]
[4] Guo Y, Sun L L, Chi F 2014 Commun. Theor. Phys. 62 423
[5] Dai X L, Zhang Z X, Jin Y Z, Niu Y, Cao H J, Liang X Y, Chen L W, Wang J P, Peng X G 2014 Nature 515 96
[6] Wu J, Wang Z M, Dorogan V G, Li S B, Lee J, Mazur Y I, Kim E S, Salamo G J 2013 Nanoscale Res. Lett. 8 1
[7] Wu J, Shao D L, Li Z H, Manasreh M O, Kunets V P, Wang Z M, Salamo G J 2009 Appl. Phys. Lett. 95 071908
[8] Cheng C, Zhang H 2006 Acta Phys. Sin. 55 4139 (in Chinese) [程成, 张航 2006 55 4139]
[9] Zhang L G, Sheng D Z 2005 Chin. Phys. Lett. 22 1518
[10] Lakatos T 1976 Glastek.Tidskr 31 51
[11] Lifshitz E, Bashouti M, Kloper V, Kigel A, Eisen M S, Berger S 2003 Nano Lett. 3 857
[12] Lipovskii A, Kolobkova E, Petrikov V, Kang I, Olkhovets A, Krauss T, Thomas M, Silcox J, Wise F, Shen Q, Kycia S 1997 Appl. Phys. Lett. 71 3406
[13] Chang J, Liu C, Heo J 2009 Non-Cryst. Solid 355 1897
[14] Loiko P A, Rachkovskaya G E, Zacharevich G B, Gurin V S, Gaponenko M S, Yumashev V 2012 Non-Cryst. Solids 358 1840
[15] Ma D W, Cheng C, Zhang Y N 2014 Opt. Mater. 37 834
[16] Silva R S, Morais P C, Alcalde A M 2006 Non-Crys. Solids 352 3522
[17] Jiang H L, Cheng C, Ma D W 2011 J. Optoelectron. Laser 22 872 (in Chinese) [江惠绿, 程成, 马德伟 2011 光电子·激光 22 872]
[18] Ma D W, Zhang Y N, Xu Z S 2014 J. Am. Ceram. Soc. 97 2455
[19] Huang W 2008 M. S. Dissertation (Hangzhou: Zhejiang University) (in Chinese) [黄纬 2008 硕士学位论文(杭州: 浙江大学)]
[20] Yang Y, Zhang H, Cheng C 2013 J. Opt. Soc. Am. B 30 3022
[21] Zhang W J, Zhai B C, Xu J 2012 Chin. J. Luminescence 33 1171 (in Chinese) [张文君, 翟保才, 许键 2012 发光学报 33 1171]
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