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In this paper, the in-situ membrane chips with the electrodes are fabricated with the micro-chip technique. Using a home-made in-situ holder, the fine lithography on the InAs nanowires is demonstrated by the focused electron beam at low temperature in a transmission electron microscope. It is found that the conductance of the nanowires decreases linearly with the cross section area decreasing from bigger than 10000 nm2 down to 800 nm2 by lithography. With this lithography at low temperature, a 10 nm nano-dot is fabricated on an InAs nanowire, and its electrical properties are measured at 77 and 300 K. The coulomb blockade effect is observed at 77 K due to the electron tunneling, while this phenomenon disappears at 300 K due to the stronger thermal fluctuation.
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Keywords:
- low temperature electron beam lithography /
- in-situ transmission electron microscope electrical measurements /
- InAs nanowire /
- Coulomb blockade effect
[1] Storm A J, Chen J H, Ling X S, Zandbergen H W, Dekker C 2003 Nature Mater. 2 537
[2] Wu M Y, Smeets R M M, Zandbergen M, Ziese U, Krapf D, Batson P E, Dekker N H, Dekker C, Zandbergen H W 2008 Nano Lett. 9 479
[3] Zandbergen H W, van Duuren R J, Alkemade P F, Lientschnig G, Vasquez O, Dekker C, Tichelaar F D 2005 Nano Lett. 5 549
[4] Krapf D, Wu M Y, Smeets R M M, Zandbergen H W, Dekker C, Lemay S G 2006 Nano Lett. 6 105
[5] Fischbein M D, Drndic M 2007 Nano Lett. 7 1329
[6] Song B, Schneider G F, Xu Q, Pandraud G, Dekker C, Zandbergen H W 2011 Nano Lett. 11 2247
[7] Xu Q, Wu M Y, Schneider G F, Houben L, Malladi S K, Dekker C, Yucelen E, Dunin B R E, Zandbergen H W 2013 ACS Nano 7 1566
[8] Lu Y, Merchant C A, Drndic M, Johnson A T C 2011 Nano Lett. 11 5184
[9] Liu K, Feng J, Kis A, Radenovic A 2014 ACS Nano 8 2504
[10] Zhang J, You L, Ye H, Yu D P 2007 Nanotechnology 18 155303
[11] Wang Z L, Poncharal P, De Heer W A 2000 Pure Appl. Chem. 72 209
[12] Wang J J, Shao R W, Deng Q S, Zheng K 2014 Acta Phys. Sin. 63 117303 (in Chinese) [王疆靖, 邵瑞文, 邓青松, 郑坤 2014 63 117303]
[13] Ennos A E 1953 Br. J. Appl. Phys. 4 101
[14] Averin D V, Likharev K K 1986 J. Low Tem. Phys. 62 345
[15] Sui B C, Fang L, Zhang C 2011 Acta Phys. Sin. 60 077302
[16] Huang W Q, Miao X J, Huang Z M, Cheng H Q, Su Q 2013 Chin. Phys. B 22 64207
[17] Wang H, Han W H, Ma L H, Li X M, Yang F H 2014 Chin. Phys. B 23 88107
[18] Wang H Y, Dou X M, Ni H Q, Niu Z C Sun B Q 2014 Acta Phys. Sin. 63 0278010
[19] Ford A C, Ho J C, Chueh Y L, Tseng Y C, Fan Z, Guo J, Bokor J, Javey A 2008 Nano Lett. 9 360
[20] Scheffler M, Nadj P S, Kouwenhoven L P, Borgström M T, Bakkers E P A M 2009 J. Appl. Phys. 106 124303
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[1] Storm A J, Chen J H, Ling X S, Zandbergen H W, Dekker C 2003 Nature Mater. 2 537
[2] Wu M Y, Smeets R M M, Zandbergen M, Ziese U, Krapf D, Batson P E, Dekker N H, Dekker C, Zandbergen H W 2008 Nano Lett. 9 479
[3] Zandbergen H W, van Duuren R J, Alkemade P F, Lientschnig G, Vasquez O, Dekker C, Tichelaar F D 2005 Nano Lett. 5 549
[4] Krapf D, Wu M Y, Smeets R M M, Zandbergen H W, Dekker C, Lemay S G 2006 Nano Lett. 6 105
[5] Fischbein M D, Drndic M 2007 Nano Lett. 7 1329
[6] Song B, Schneider G F, Xu Q, Pandraud G, Dekker C, Zandbergen H W 2011 Nano Lett. 11 2247
[7] Xu Q, Wu M Y, Schneider G F, Houben L, Malladi S K, Dekker C, Yucelen E, Dunin B R E, Zandbergen H W 2013 ACS Nano 7 1566
[8] Lu Y, Merchant C A, Drndic M, Johnson A T C 2011 Nano Lett. 11 5184
[9] Liu K, Feng J, Kis A, Radenovic A 2014 ACS Nano 8 2504
[10] Zhang J, You L, Ye H, Yu D P 2007 Nanotechnology 18 155303
[11] Wang Z L, Poncharal P, De Heer W A 2000 Pure Appl. Chem. 72 209
[12] Wang J J, Shao R W, Deng Q S, Zheng K 2014 Acta Phys. Sin. 63 117303 (in Chinese) [王疆靖, 邵瑞文, 邓青松, 郑坤 2014 63 117303]
[13] Ennos A E 1953 Br. J. Appl. Phys. 4 101
[14] Averin D V, Likharev K K 1986 J. Low Tem. Phys. 62 345
[15] Sui B C, Fang L, Zhang C 2011 Acta Phys. Sin. 60 077302
[16] Huang W Q, Miao X J, Huang Z M, Cheng H Q, Su Q 2013 Chin. Phys. B 22 64207
[17] Wang H, Han W H, Ma L H, Li X M, Yang F H 2014 Chin. Phys. B 23 88107
[18] Wang H Y, Dou X M, Ni H Q, Niu Z C Sun B Q 2014 Acta Phys. Sin. 63 0278010
[19] Ford A C, Ho J C, Chueh Y L, Tseng Y C, Fan Z, Guo J, Bokor J, Javey A 2008 Nano Lett. 9 360
[20] Scheffler M, Nadj P S, Kouwenhoven L P, Borgström M T, Bakkers E P A M 2009 J. Appl. Phys. 106 124303
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