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Based on the Landau-Khalatnikov equation of motion, the switching dynamic behaviors, (including the average polarization, switching time, switching current and coercive field) of a ferroelectric bilayer film with a surface transition layer within each constituent thin film and a ferroelectric interfacial coupling between two thin films have been investigated. Results reveal that there is a competitive mechanism in the bilayer film, the action of surface transition layer and the interfacial coupling. The abnormal behavior is discovered in the polarization reversal process of the bilayer film, which can be attributed to the competition between the surface transition layer and the interfacial coupling. The combined action of surface transition layer and interfacial coupling plays a decisive role on the dynamic properties of a ferroelectric bilayer film.
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Keywords:
- ferroelectric bilayer film /
- switching behavior /
- interfacial coupling /
- surface transition layer
[1] Pertsev N A, Janolin P E, Kiat J M, Uesu Y 2010 Phys. Rev. B 81 144118
[2] Zhu Z Y, Wang B, Zheng Y, Wang H, Li Q K, Li C L 2007 Acta Phys. Sin. 56 5986 (in Chinese) [朱振亚, 王彪, 郑跃, 王海, 李青坤 2007 56 5986]
[3] Cui L, L T Q, Xue H J, Sun P N 2010 Chin. Phys. B 19 077701
[4] Qiu J H Jiang Q 2009 Solid State Commun. 149 1549
[5] Jaekwang L, Sai N, Cai T Y, Niu Q., Demkov A A 2010 Phys. Rev. B 81 144425
[6] Nagarajan V, Junquera J, He J Q, Jia C L, Waser R, Lee K, Kim Y K, Baik S, Zhao T, Ramesh R, Ghosez Ph, Rabe K M 2006 J. Appl. Phys. 100 051609
[7] Bao D H, Lee S K, Zhu X H, Alexe M, Hesse D 2005 Appl. Phys. Lett. 86 082906
[8] Im J, Auciello O, Streiffer S K 2002 Thin Solid Films 413 243
[9] Ranjith R,, Krupanidhi S B 2007 Appl. Phys. Lett. 91 082907
[10] Yang B, Zhang D M, Zheng C D, Wang J, Yu J 2007 J. Phys. D: Appl. Phys. 40 5696
[11] Roytburd A L, Zhong S Alpay S P 2005 Appl. Phys. Lett. 87 092902
[12] Cui L, Xu Q, Xu X, Li Y C, He Z L, Che J X, L T Q 2011 Solid State Science 13 2185
[13] Lee T Y, Ong L H 2011 AIP Conf. Proc. 1328 80
[14] Chew K H, Ong L H, Iwata M 2011 Curr. Appl. Phys. 11 755
[15] Ong L H, Lee T Y, Chew K H 2011 Ceramics Inter. 38 S3
[16] L T Q, Cao W 2002 Phys. Rev. B 66 024102
[17] L T Q, W Cao 2003 Microelec. Engin. 66 818
[18] Sun P N, Cui L, L T Q 2009 Chin. Phys. B 18 1658
[19] Lo V C 2003 J. Appl. Phys. 94 3353
[20] Lo V C Chen Z J 2002 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 49 980
[21] Ong L-H, Osman J, Tilley D R 2002 Phys. Rev. B 65 134108
[22] Cui L, Xu Q, Han Z Y, Xu X, Che J X, Xue H J, L T Q 2013 Solid State Science 16 65
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[1] Pertsev N A, Janolin P E, Kiat J M, Uesu Y 2010 Phys. Rev. B 81 144118
[2] Zhu Z Y, Wang B, Zheng Y, Wang H, Li Q K, Li C L 2007 Acta Phys. Sin. 56 5986 (in Chinese) [朱振亚, 王彪, 郑跃, 王海, 李青坤 2007 56 5986]
[3] Cui L, L T Q, Xue H J, Sun P N 2010 Chin. Phys. B 19 077701
[4] Qiu J H Jiang Q 2009 Solid State Commun. 149 1549
[5] Jaekwang L, Sai N, Cai T Y, Niu Q., Demkov A A 2010 Phys. Rev. B 81 144425
[6] Nagarajan V, Junquera J, He J Q, Jia C L, Waser R, Lee K, Kim Y K, Baik S, Zhao T, Ramesh R, Ghosez Ph, Rabe K M 2006 J. Appl. Phys. 100 051609
[7] Bao D H, Lee S K, Zhu X H, Alexe M, Hesse D 2005 Appl. Phys. Lett. 86 082906
[8] Im J, Auciello O, Streiffer S K 2002 Thin Solid Films 413 243
[9] Ranjith R,, Krupanidhi S B 2007 Appl. Phys. Lett. 91 082907
[10] Yang B, Zhang D M, Zheng C D, Wang J, Yu J 2007 J. Phys. D: Appl. Phys. 40 5696
[11] Roytburd A L, Zhong S Alpay S P 2005 Appl. Phys. Lett. 87 092902
[12] Cui L, Xu Q, Xu X, Li Y C, He Z L, Che J X, L T Q 2011 Solid State Science 13 2185
[13] Lee T Y, Ong L H 2011 AIP Conf. Proc. 1328 80
[14] Chew K H, Ong L H, Iwata M 2011 Curr. Appl. Phys. 11 755
[15] Ong L H, Lee T Y, Chew K H 2011 Ceramics Inter. 38 S3
[16] L T Q, Cao W 2002 Phys. Rev. B 66 024102
[17] L T Q, W Cao 2003 Microelec. Engin. 66 818
[18] Sun P N, Cui L, L T Q 2009 Chin. Phys. B 18 1658
[19] Lo V C 2003 J. Appl. Phys. 94 3353
[20] Lo V C Chen Z J 2002 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 49 980
[21] Ong L-H, Osman J, Tilley D R 2002 Phys. Rev. B 65 134108
[22] Cui L, Xu Q, Han Z Y, Xu X, Che J X, Xue H J, L T Q 2013 Solid State Science 16 65
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