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Fe- and Mn-doped AlN thin films were prepared on Si substrates by direct current (DC) magnetron co-sputtering method in the atmospher of Ar and N2 mixture. The influences of sputtering currents and the target to substrate distance on the structure of the films were investigated by X-ray diffraction and Raman spectroscopy, respectively. Surface morphology and composition were studied by scanning electron microscope (SEM) with an energy dispersive X-ray spectroscopy (EDS) attachment. The magnetism of Mn- and Fe-doped AlN films was measured by vibrating sample magnetometer (VSM) at room temperature (RT). Processing of the Mn-doped AlN films produces Mn clusters in the samples. Due to the presence of the antiferromagnetism Mn clusters, ferromagnetism is either suppressed or disappears. The Fe-doped AlN films show ferromagnetism at RT, which should arise from the AlFeN ternary alloy. With the increase of the Fe target sputtering current, the Fe concentration is increased from 6.81 at.% to 16.17at.%; the saturation magnetization Ms is reduced from 0.27 emu·cm-3 to 0.20 emu·cm-3, and the coercive force Hc is increased from 57 Oe to 115 Oe, this is because the separation of Fe ions get shorter and the antiferromagnetic coupling is enhanced.
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Keywords:
- dc magnetron co-sputtering /
- AlN thin films /
- structure /
- magnetism
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[1] Ohno H 1998 Science 281 951
[2] Ohno Y, Young D K, Beschoten B, Matsukura F, Ohno H, Awschalom D D 1999 Nature 402 790
[3] Datta S, Das B 1990 Appl. Phys. Lett. 56 665
[4] Prinz G A 1998 Science 282 1660
[5] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[6] Ohno H, Shen A, Matsukura F, Oiwa A, Endo A, Katsumoto S, Iye Y 1996 Appl. Phys. Lett. 69 363
[7] Beschoten B, Crowell P A, Malajovich I, Awschalom D D, Matsukura F, Shen A, Ohno H 1999 Phys. Rev. Lett. 83 3073
[8] Weng W X, Yan W S, Sun Z H, Yao T, Guo Y X, Wang F, Wei S Q, Zhang G B, Xu P S 2008 Acta Phys. Sin. 57 5788 (in Chinese) [翁卫祥, 闫文盛, 孙治湖, 姚涛, 郭玉献, 王峰, 韦世强, 张国斌, 徐彭寿 2008 57 5788]
[9] Liu Y Y, Liu F M, Shi X, Ding P, Zhou C C 2008 Acta Phys. Sin. 57 7274 (in Chinese) [刘妍妍, 刘发民, 石霞, 丁芃, 周传仓 2008 57 7274]
[10] Kuang A L, Liu X C, Lu Z L, Ren S K, Liu C Y, Zhang F M, Du Y W 2005 Acta Phys. Sin. 54 2934 (in Chinese) [匡安龙, 刘兴翀, 路忠林, 任尚坤, 刘存业, 张凤鸣, 都有为 2005 54 2934]
[11] Liu X C, Zhang H W, Zhang T, Chen B Y, Chen Z Z, Song L X, Shi E W 2008 Chin. Phys. B 17 1371
[12] Ran C J, Yang H L, Wang Y K, Hassan F M, Zhou L G, Xu X G, Jiang Y 2013 Chin. Phys. B 22 067503
[13] Dong S, Zhu F 2012 Chin. Phys. B 21 097502
[14] Hasegawa F, Takahashi T, Kubo K, Nannichi Y 1987 Jpn. J. Appl. Phys. 26 1555
[15] Sardar K, Rao C N R 2005 Solid State Sciences 7 217
[16] Gao X Q, Guo Z Y, Cao D X, Zhang Y F, Sun H Q, Deng B 2010 Acta Phys. Sin. 59 3418 (in Chinese) [高小奇, 郭志友, 曹东兴, 张宇飞, 孙慧卿, 邓贝 2010 59 3418]
[17] Kim H W, Kebede M A, Kim H S 2009 Applied Surface Science 255 7221
[18] Li H, Bao H Q, Song B, Wang W J, Chen X L 2008 Solid State Communications 148 406
[19] Gu L, Wu S Y, Liu H X, Singh R K, Newman N, Smith D J 2005 J. Magn. Magn. Mater. 290 1395
[20] Gao X D, Jiang E Y, Liu H H, Mi W B, Li Z Q, Wu P, Bai H L 2007 Applied Surface Science 253 5431
[21] Gupta R K, Ghosh K, Kahol P K 2009 Applied Surface Science 255 8926
[22] Chen D, Xu D, Wang J J, Zhao B, Zhang Y F 2008 Thin Solid Films 517 986
[23] Luo M C, Wang X L, Li J M, Liu H X, Wang L, Sun D Z, Zeng Y P, Lin L Y 2002 Journal of Crystal Growth 244 229
[24] Lughi V, Clarke D R 2006 Appl. Phys. Lett. 89 241911
[25] Kuball M, Hayes J M, Prins A D, Uden N W A, Dunstan D J, Shi Y, Edgar J H 2001 Appl. Phys. Lett. 78 724
[26] Perlin P, Polian A, Suski T 1993 Phys. Rev. B 47 2874
[27] Singhal R K, Dhawan M, Kumar S, Dolia S N, Xing Y T, Saitovitch E 2009 Physica B 404 3275
[28] Ham M H, Yoon S, Park Y, Myoung J M 2004 Journal of Crystal Growth 271 420
[29] Song Y Y, Quang P H, Pham V T, Lee K W, Yu S C 2005 J. Magn. Magn. Mater. 290 1375
[30] Sharma P, Gupta A, Rao K V, Owens F J, Sharma R, Ahuja R, Guillen J M, Johansson B, Gehring G A 2003 Nature Materials 2 673
[31] Li X D, Wang X Y, Jiang X Q, Du Y C 1994 Vacuum Deposition Technology (Hangzhou: Zhejiang University Press) p109 (in Chinese) [李学丹, 万学英, 姜祥祺, 杜元成 1994 真空沉积技术 (杭州: 浙江大学出版社) 第109页]
[32] Chen M, Bai X D, Huang R F, Wen L S 2000 Chinese Journal of Semiconductors 21 394 (in Chinese) [陈猛, 白雪冬, 黄荣芳, 闻立时 2000 半导体学报 21 394]
[33] Liu H Y, Zeng F, Tang G S, Pan F 2013 Applied Surface Science 270 225
[34] Park W K, Ortega-Hertogs R J, Moodera J S, Punnoose A, Seehra M S 2002 J. Appl. Phys. 91 8093
[35] Ueda K, Tabata H, Kawai T 2001 Appl. Phys. Lett. 79 988
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