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Within the framework of the fraction-dimensional space approach, the binding energy and the effective mass of a polaron confined in a GaAs film deposited on Al0.3Ga0.7As substrate have been investigated. It is shown that the polaron binding energy and mass shift decrease monotonously with increasing film thickness. For the film thickness of Lw70 and the substrate thickness of Lb200 , the substrate thickness will influence the polaron binding energy and mass shift. The polaron binding energy and mass shift increase with increasing substrate thickness. In the region Lw70 or Lb200 , the substrate thickness has no influence on the polaron binding energy and mass shift.
[1] Wang Z P, Liang X X 2005 Chin. Phys. Lett. 22 2367
[2] Zhao F Q, Zhou B Q 2007 Acta Phys. Sin. 56 4856 (in Chinese) [赵凤岐, 周炳卿 2007 56 4856]
[3] Yu Y F, Xiao J L, Yin J W, Wang Z W 2008 Chin. Phys. B 17 2236
[4] He X F 1987 Solid State Commun. 61 53 He X F 1990 Solid State Commun. 75 111
[5] He X F 1990 Phys. Rev. B 42 11751 He X F 1991 Phys. Rev. B 43 2063
[6] Mathieu H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[7] Lefebvre P, Christol P, Mathieu H 1992 Phys. Rev. B 46 13603
[8] Christol P, Lefebvre P, Mathieu H 1993 J. Appl. Phys. 74 5626
[9] de Dios-Leyva M, Bruno-Alfonso A, Matos-Abiague A, Oliveira L E 1997 J. Phys.: Condens. Matter 9 8477
[10] Matos-Abiague A, Oliveira L E, de Dios-Leyva M 1998 Phys. Rev. B 58 4072
[11] Wang Z P, Liang X X 2009 Phys. Lett. A 373 2596
[12] Zhao Q X, Monemar B, Holtz P O, Willander M, Fimland B O, Johannessen K 1994 Phys. Rev. B 50 4476
[13] Reyes-Gómez E, Matos-Abiague A, Perdomo-Leiva C A, de Dios-Leyva M, Oliveira L E 2000 Phys. Rev. B 61 13104
[14] Singh J, Birkedal D, Lyssenko V G, Hvam J M 1996 Phys. Rev. B 53 15909
[15] Thilagam A 1997 Phys. Rev. B 55 7804
[16] Wang Z P, Liang X X 2010 Solid State Commun. 150 356
[17] Matos-Abiague A, Oliveira L E, de Dios-Leyva M 2001 Physica B 296 342
[18] Reyes-Gómez E, Perdomo-Leiva C A, Oliveira L E, de Dios-Leyva M 2000 Physica E 8 239
[19] Oliveira L E, Duque C A, Porras-Montenegro N, de Dios-Leyva M 2001 Physica B 302-303 72
[20] Reyes-Gómez E, Oliveira L E, de Dios-Leyva M 1999 J. Appl. Phys. 85 4045
[21] Mikhailov I D, Betancur F J, Escorcia R A, Sierra-Ortega J 2003 Phys. Rev. B 67 115317
[22] Kundrotas J, Črškus A, Ašmontas S, Valušis G 2005 Phys. Rev. B 72 235322
[23] Kundrotas J, Črškus A, Ašmontas S, Valušis G, Halsall M P, Johannessen E, Harrison P 2007 Semicond. Sci. Technol. 22 1070
[24] Matos-Abiague A 2002 J. Phys.: Condens. Matter 14 4543
[25] Matos-Abiague A 2002 Semicond. Sci. Technol. 17 150
[26] Matos-Abiague A 2002 Phys. Rev. B 65 165321
[27] Rodrí}guez Suárez R L, Matos-Abiague A 2003 Physica E 18 485
[28] Thilagam A Matos-Abiague A 2004 J. Phys.: Condens. Matter 16 3981
[29] Wang Z P, Liang X X, Wang X 2007 Eur. Phys. J. B 59 41
[30] Deng Y P, Lv B B, Tian Q 2010 Acta Phys. Sin. 59 4961 (in Chinese) [邓艳平, 吕彬彬, 田强 2010 59 4961]
[31] Deng Y P Tian Q 2011 Sci. China: Phys. Mech. Astron. 54 1593
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[1] Wang Z P, Liang X X 2005 Chin. Phys. Lett. 22 2367
[2] Zhao F Q, Zhou B Q 2007 Acta Phys. Sin. 56 4856 (in Chinese) [赵凤岐, 周炳卿 2007 56 4856]
[3] Yu Y F, Xiao J L, Yin J W, Wang Z W 2008 Chin. Phys. B 17 2236
[4] He X F 1987 Solid State Commun. 61 53 He X F 1990 Solid State Commun. 75 111
[5] He X F 1990 Phys. Rev. B 42 11751 He X F 1991 Phys. Rev. B 43 2063
[6] Mathieu H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[7] Lefebvre P, Christol P, Mathieu H 1992 Phys. Rev. B 46 13603
[8] Christol P, Lefebvre P, Mathieu H 1993 J. Appl. Phys. 74 5626
[9] de Dios-Leyva M, Bruno-Alfonso A, Matos-Abiague A, Oliveira L E 1997 J. Phys.: Condens. Matter 9 8477
[10] Matos-Abiague A, Oliveira L E, de Dios-Leyva M 1998 Phys. Rev. B 58 4072
[11] Wang Z P, Liang X X 2009 Phys. Lett. A 373 2596
[12] Zhao Q X, Monemar B, Holtz P O, Willander M, Fimland B O, Johannessen K 1994 Phys. Rev. B 50 4476
[13] Reyes-Gómez E, Matos-Abiague A, Perdomo-Leiva C A, de Dios-Leyva M, Oliveira L E 2000 Phys. Rev. B 61 13104
[14] Singh J, Birkedal D, Lyssenko V G, Hvam J M 1996 Phys. Rev. B 53 15909
[15] Thilagam A 1997 Phys. Rev. B 55 7804
[16] Wang Z P, Liang X X 2010 Solid State Commun. 150 356
[17] Matos-Abiague A, Oliveira L E, de Dios-Leyva M 2001 Physica B 296 342
[18] Reyes-Gómez E, Perdomo-Leiva C A, Oliveira L E, de Dios-Leyva M 2000 Physica E 8 239
[19] Oliveira L E, Duque C A, Porras-Montenegro N, de Dios-Leyva M 2001 Physica B 302-303 72
[20] Reyes-Gómez E, Oliveira L E, de Dios-Leyva M 1999 J. Appl. Phys. 85 4045
[21] Mikhailov I D, Betancur F J, Escorcia R A, Sierra-Ortega J 2003 Phys. Rev. B 67 115317
[22] Kundrotas J, Črškus A, Ašmontas S, Valušis G 2005 Phys. Rev. B 72 235322
[23] Kundrotas J, Črškus A, Ašmontas S, Valušis G, Halsall M P, Johannessen E, Harrison P 2007 Semicond. Sci. Technol. 22 1070
[24] Matos-Abiague A 2002 J. Phys.: Condens. Matter 14 4543
[25] Matos-Abiague A 2002 Semicond. Sci. Technol. 17 150
[26] Matos-Abiague A 2002 Phys. Rev. B 65 165321
[27] Rodrí}guez Suárez R L, Matos-Abiague A 2003 Physica E 18 485
[28] Thilagam A Matos-Abiague A 2004 J. Phys.: Condens. Matter 16 3981
[29] Wang Z P, Liang X X, Wang X 2007 Eur. Phys. J. B 59 41
[30] Deng Y P, Lv B B, Tian Q 2010 Acta Phys. Sin. 59 4961 (in Chinese) [邓艳平, 吕彬彬, 田强 2010 59 4961]
[31] Deng Y P Tian Q 2011 Sci. China: Phys. Mech. Astron. 54 1593
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