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We report the new theoretical analysis method to obtain net gain in silicon waveguide by stimulated Raman scattering, and the key parameters of the free carrier lifetime and the pump light intensity are analyzed. The free carrier lifetime threshold and pump light intensity threshold are deduced. The gain characteristics of silicon Raman amplifiers with different pumping schemes are investigated, and the results show that the gain can be significantly enhanced in the bidirectional pump scheme.
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Keywords:
- silicon amplifier /
- Raman amplifier /
- pumping schemes
[1] Lin Q, Painter O J, Agrawal G P 2007 Opt. Express 15 16604
[2] Claps R, Dimitropoulos D, Jalali B 2002 Electron. Lett. 38 1352
[3] Krause M, Renner H, Brinkmeyer E 2004 Opt. Express 12 5703
[4] Claps R, Raghunathan V, Dimitropoulos D, Jalali B 2004 Opt. Express 12 2774
[5] Liu A, Rong H, Paniccia M, Cohen O, Hak D 2004 Opt. Express 12 4261
[6] Liu A, Rong H, Jones R, Cohen O, Hak D, Paniccia M 2006 J. Lightwave Technol. 24 1440
[7] Espinola R L, Dadap J I, Osgood R M Jr, McNab S J, Vlasov Y A 2004 Opt. Express 12 3713
[8] Jalali B, Raghunathan V, Dimitropoulos D, Boyraz 2006 J. Sel. Top. Quant. Elect. 12 412
[9] Boyraz , Jalali Bahram 2004 Opt. Express 12 5269
[10] Rong H, Jones R, Liu A, Cohen O, Hak D, Fang A, Paniccia M 2005 Nature 433 725
[11] Rong H, Liu A, Jones R, Cohen O, Hak D, Nicolaescu R, Fang A, Paniccia M 2005 Nature 433 292
[12] Raghunathan V, Shori R, Stafsudd O M, Jalali B 2006 Phys. Status Solidi. A 203 R38
[13] Raghunathan V, Borlaug D, Rice R R, Jalali B 2007 Opt. Express 15 14355
[14] Sirleto L, Ferrara M A, Jalali B, Rendina I 2006 J. Opt. A:Pure Appl. Opt. 8 S574
[15] Sirleto L, Ferrara M A, Rendina I, Jalali B 2008 Phys. Status Solidi C 6 1644
[16] Chi R H, Lu K C, Yun P, Li Y G, Dong X Y, Chen W Z, Yang G M, Liu Z B 2004 Acta Phys. Sin. 53 456 (in Chinese) [迟荣华、吕可诚、运 鹏、李乙钢、董孝义、陈文钊、杨光明、刘兆兵 2004 53 456]
[17] Tong Z, Wei H, Jian S S 2006 Acta Phys. Sin. 55 1873 (in Chinese) [童 治、魏 淮、简水生 2006 55 1873]
[18] Yun P, Chi R H, Li Y G, Lu K C 2004 Acta Phys. Sin. 53 4329 (in Chinese) [运 鹏、迟荣华、李乙钢、吕可诚 2004 53 4329]
[19] Jiang W N, Chen J P, Li X W, Shang T 2004 Chin. Phys. 13 1460
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[1] Lin Q, Painter O J, Agrawal G P 2007 Opt. Express 15 16604
[2] Claps R, Dimitropoulos D, Jalali B 2002 Electron. Lett. 38 1352
[3] Krause M, Renner H, Brinkmeyer E 2004 Opt. Express 12 5703
[4] Claps R, Raghunathan V, Dimitropoulos D, Jalali B 2004 Opt. Express 12 2774
[5] Liu A, Rong H, Paniccia M, Cohen O, Hak D 2004 Opt. Express 12 4261
[6] Liu A, Rong H, Jones R, Cohen O, Hak D, Paniccia M 2006 J. Lightwave Technol. 24 1440
[7] Espinola R L, Dadap J I, Osgood R M Jr, McNab S J, Vlasov Y A 2004 Opt. Express 12 3713
[8] Jalali B, Raghunathan V, Dimitropoulos D, Boyraz 2006 J. Sel. Top. Quant. Elect. 12 412
[9] Boyraz , Jalali Bahram 2004 Opt. Express 12 5269
[10] Rong H, Jones R, Liu A, Cohen O, Hak D, Fang A, Paniccia M 2005 Nature 433 725
[11] Rong H, Liu A, Jones R, Cohen O, Hak D, Nicolaescu R, Fang A, Paniccia M 2005 Nature 433 292
[12] Raghunathan V, Shori R, Stafsudd O M, Jalali B 2006 Phys. Status Solidi. A 203 R38
[13] Raghunathan V, Borlaug D, Rice R R, Jalali B 2007 Opt. Express 15 14355
[14] Sirleto L, Ferrara M A, Jalali B, Rendina I 2006 J. Opt. A:Pure Appl. Opt. 8 S574
[15] Sirleto L, Ferrara M A, Rendina I, Jalali B 2008 Phys. Status Solidi C 6 1644
[16] Chi R H, Lu K C, Yun P, Li Y G, Dong X Y, Chen W Z, Yang G M, Liu Z B 2004 Acta Phys. Sin. 53 456 (in Chinese) [迟荣华、吕可诚、运 鹏、李乙钢、董孝义、陈文钊、杨光明、刘兆兵 2004 53 456]
[17] Tong Z, Wei H, Jian S S 2006 Acta Phys. Sin. 55 1873 (in Chinese) [童 治、魏 淮、简水生 2006 55 1873]
[18] Yun P, Chi R H, Li Y G, Lu K C 2004 Acta Phys. Sin. 53 4329 (in Chinese) [运 鹏、迟荣华、李乙钢、吕可诚 2004 53 4329]
[19] Jiang W N, Chen J P, Li X W, Shang T 2004 Chin. Phys. 13 1460
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