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By reactive evaporation method, the SnO2:(Cu,In) transparent conductive films are prepared on glass, Corning7059 glass and quartz glass substrates separately. The element contents are analyzed, the distributions of all elements in the films are given, and the transmittances of samples are also measured. The results show that the UV transmittance of individual sample is high, and the transmittance of the film depends on annealing process. The resistance-temperature characteristics are measured and explained. The relationship between optical band gap and absorption coefficient is discussed. The simple method in which the transmittance curve is used to determine the optical band gap is given. The relation between mobility of the extended state and mobility edge with Fermi level is discussed. The results show that the preparation of copper and indium co-doped tin oxide transparent conductive films has achieved the purpose of reducing the cost, and some particular samples have wide band gap.
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Keywords:
- metal-oxide film /
- resistivity /
- optoelectronic property
[1] Su C H, Pang D W, Zhang Z G 1991 Chin. J. Semicond. 12 709(in Chinese) [宿昌厚、庞大文、张治国 1991 半导体学报 12 709]
[2] León-Silva U, Nicho M E, Hailin Hu, Rodolfo Cruz-Silva 2007 Solar Energy Materials and Solar Cells 91 1444
[3] Zhang W J, Wang T M, Cui M, Rong A L 2006 Acta Phys. Sin. 55 1295(in Chinese)[张维佳、王天明、崔 敏、戎蔼伦 2006 55 1295]
[4] Yutaka Ohhata, Fujitoshi Shinoki, Sada Fumi Yoshida 1979 Thin Solid Films 59 255
[5] Shong C W, Liu Z W, Zhang Q Y 2006 Acta Phys. Sin. 55 430(in Chinese)[孙成伟、刘志文、张庆瑜 2006 55 0430]
[6] Lan W, Liu X Q, Huang C M 2006 Acta Phys. Sin.55 7048(in Chinese)[兰 伟、刘雪芹、黄春明 2006 55 0748]
[7] Ji Z G, He Z J, Song Y L 2004 Acta Phys. Sin. 53 4330(in Chinese)[季振国、何振杰、宋永梁 2004 53 4330]
[8] Guojia Fang, Dejie Li, Baolun Yao 2002 J. Phys, D: Appl. Phys. 35 3096
[9] Yang Z W, Han S H, Yang T L 2000 Acta Phys. Sin.49 1200(in Chinese)[扬志伟、韩圣浩、扬田林 2000 49 1200]
[10] Hao X T, Ma J, Xu X G 2002 Acta Phys Sin. 51 353(in Chinese)[郝晓涛、马 瑾、徐现刚 2002 51 353]
[11] Huang J M, Dong J H, Zhang X Y 2003 Acta Energiae Solar Sin. 24 845(in Chinese)[黄佳木、董建华、张新元 2003 太阳能学报 24 845]
[12] Eun Lyoung Kim, Sang Kooun Jung, Sang Ho Sohn, Duck Kyu Park 2007 J. Phys, D: Appl. Phys. 40 1784
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[1] Su C H, Pang D W, Zhang Z G 1991 Chin. J. Semicond. 12 709(in Chinese) [宿昌厚、庞大文、张治国 1991 半导体学报 12 709]
[2] León-Silva U, Nicho M E, Hailin Hu, Rodolfo Cruz-Silva 2007 Solar Energy Materials and Solar Cells 91 1444
[3] Zhang W J, Wang T M, Cui M, Rong A L 2006 Acta Phys. Sin. 55 1295(in Chinese)[张维佳、王天明、崔 敏、戎蔼伦 2006 55 1295]
[4] Yutaka Ohhata, Fujitoshi Shinoki, Sada Fumi Yoshida 1979 Thin Solid Films 59 255
[5] Shong C W, Liu Z W, Zhang Q Y 2006 Acta Phys. Sin. 55 430(in Chinese)[孙成伟、刘志文、张庆瑜 2006 55 0430]
[6] Lan W, Liu X Q, Huang C M 2006 Acta Phys. Sin.55 7048(in Chinese)[兰 伟、刘雪芹、黄春明 2006 55 0748]
[7] Ji Z G, He Z J, Song Y L 2004 Acta Phys. Sin. 53 4330(in Chinese)[季振国、何振杰、宋永梁 2004 53 4330]
[8] Guojia Fang, Dejie Li, Baolun Yao 2002 J. Phys, D: Appl. Phys. 35 3096
[9] Yang Z W, Han S H, Yang T L 2000 Acta Phys. Sin.49 1200(in Chinese)[扬志伟、韩圣浩、扬田林 2000 49 1200]
[10] Hao X T, Ma J, Xu X G 2002 Acta Phys Sin. 51 353(in Chinese)[郝晓涛、马 瑾、徐现刚 2002 51 353]
[11] Huang J M, Dong J H, Zhang X Y 2003 Acta Energiae Solar Sin. 24 845(in Chinese)[黄佳木、董建华、张新元 2003 太阳能学报 24 845]
[12] Eun Lyoung Kim, Sang Kooun Jung, Sang Ho Sohn, Duck Kyu Park 2007 J. Phys, D: Appl. Phys. 40 1784
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