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Polycrystalline bulk Tb0.8Eu0.2MnO3 was prepared by solid phase reaction. The XRD analysis of the sample showed that the Eu3+ had been doped in TbMnO3. Dielectric properties were examined as functions of temperature (100 K ≤T≤ 300 K) and frequency (200 Hz≤ f ≤100 kHz). Two dielectric relaxations were found in these ranges. By means of analysis the low-temperature relaxation was ascribed to the dipolar effects induced by carriers hopping; and the high-temperature relaxation was found to originate from the internal barrier-layer capacitor effects of ion conductivity. The measurement of resistivity showed that there is a marked transition around 230 K, indicating that different conductive mechanisms underlay the transport processes.
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Keywords:
- multiferroic materials /
- doped /
- dielectric properties
[1] ［1］Smolenskii G A, Chupis I E 1982 Sov. Phys. Usp. 25 485
[2] ［2］Eerenstein W, Mathur N D， Scott J F 2006 Nature 442 759
[3] ［3］Spaldin N A, Fiebig M 2005 Science 309 391
[4] ［4］Huang Z J, Cao Y, Sun Y Y, Xue Y Y, Chu C W 1997 Phys. Rev. B 56 2623
[5] ［5］Hill N A 2000 J. Phys. Chem. B 104 6694
[6] ［6］Fiebig M, Lottermoser T H, Frhlich D, Goltsev A V, Pisarev R V 2002 Nature 419 818
[7] ［7］Kimura T, Goto T, Shintani H, Ishizaka K, Arima T, Tokura Y 2003 Nature 426 55
[8] ［8］Noda K, Nakamura S, Nagayama J, Kuwahara H 2005 J. Appl. Phys. 97 10C103
[9] ［9］Kimura T, Lawes G, Goto T, Tokura Y, Ramirez A P 2005 Phys. Rev. B 71 224425
[10] ］Lorenz B, Litvinchuk A P, Gospodinov M M, Chu C W 2004 Phys. Rev. Lett. 92 087204
[11] ］Wang C C, Cui Y M, Zhang L W 2007 Appl. Phys. Lett. 90 012904
[12] ］Cui Y M, Zhang L W, Xie G L, Wang R M 2006 Solid State Commun. 138 481
[13] ］Dong Z G, Gan Z Q, Ge S B, Shen M R, Xu R 2002 Acta Phys. Sin. 51 2896 (in Chinese) ［董正高、甘肇强、葛水兵、沈明荣、徐闰 2002 51 2896］
[14] ］Namatame H, Fujimori A, Takagi H, Uchida S, de Groot F M F, Fuggle J C 1993 Phys. Rev. B 48 16917
[15] ］Mott N F, Davis E A 1979 Electronic Processes in Non-crystalline Materials (2nd Ed) (New York: Clarendon, Oxford) p79
[16] ］Jonscher A K 1999 J. Phys. D: Appl. Phys. 32 R57
[17] ］Li J Y, Li S T, Yin G L 2009 Acta Phys. Sin. 58 4219 (in Chinese) ［李建英、李盛涛、尹桂来 2009 58 4219］
-
[1] ［1］Smolenskii G A, Chupis I E 1982 Sov. Phys. Usp. 25 485
[2] ［2］Eerenstein W, Mathur N D， Scott J F 2006 Nature 442 759
[3] ［3］Spaldin N A, Fiebig M 2005 Science 309 391
[4] ［4］Huang Z J, Cao Y, Sun Y Y, Xue Y Y, Chu C W 1997 Phys. Rev. B 56 2623
[5] ［5］Hill N A 2000 J. Phys. Chem. B 104 6694
[6] ［6］Fiebig M, Lottermoser T H, Frhlich D, Goltsev A V, Pisarev R V 2002 Nature 419 818
[7] ［7］Kimura T, Goto T, Shintani H, Ishizaka K, Arima T, Tokura Y 2003 Nature 426 55
[8] ［8］Noda K, Nakamura S, Nagayama J, Kuwahara H 2005 J. Appl. Phys. 97 10C103
[9] ［9］Kimura T, Lawes G, Goto T, Tokura Y, Ramirez A P 2005 Phys. Rev. B 71 224425
[10] ］Lorenz B, Litvinchuk A P, Gospodinov M M, Chu C W 2004 Phys. Rev. Lett. 92 087204
[11] ］Wang C C, Cui Y M, Zhang L W 2007 Appl. Phys. Lett. 90 012904
[12] ］Cui Y M, Zhang L W, Xie G L, Wang R M 2006 Solid State Commun. 138 481
[13] ］Dong Z G, Gan Z Q, Ge S B, Shen M R, Xu R 2002 Acta Phys. Sin. 51 2896 (in Chinese) ［董正高、甘肇强、葛水兵、沈明荣、徐闰 2002 51 2896］
[14] ］Namatame H, Fujimori A, Takagi H, Uchida S, de Groot F M F, Fuggle J C 1993 Phys. Rev. B 48 16917
[15] ］Mott N F, Davis E A 1979 Electronic Processes in Non-crystalline Materials (2nd Ed) (New York: Clarendon, Oxford) p79
[16] ］Jonscher A K 1999 J. Phys. D: Appl. Phys. 32 R57
[17] ］Li J Y, Li S T, Yin G L 2009 Acta Phys. Sin. 58 4219 (in Chinese) ［李建英、李盛涛、尹桂来 2009 58 4219］
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