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- Zhang Fa－pei1,
- Guo Hong－zhi1,
- Xu Peng－shou1,
- Zhu Chuan－gang1,
- Lu Er－dong1,
- Zhang Xin－yi1,
- Liang Ren－you2
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(1)中国科学技术大学国家同步辐射实验室，合肥 230029; (2)中国科学技术大学结构分析开放实验室，合肥 230026
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[1] Luo Wen-Hua, Meng Da-Qiao, Li Gan, Chen Hu-Chi. Density functional study of CO adsorption on Pu (100) surface. Acta Physica Sinica, 2008, 57(1): 160-164. doi: 10.7498/aps.57.160 [2] ZHU CHUAN-GANG, XU PENG-SHOU, LU ER-DONG, XU FA-QIANG, PAN HAI-BIN. INFLUENCE OF CH3CSNH2 PASSIVATION ON INTERFACE DIFFUSION BETWEEN FERROMAGNETIC METALS AND GaAs. Acta Physica Sinica, 2001, 50(11): 2212-2216. doi: 10.7498/aps.50.2212 [3] WU DI, LIU GUO-LEI, WU YI-ZHENG, DONG GUO-SHENG, JIN XIAO-FENG, SHEN XIAO-LIANG. EPITAXIAL STRUCTURES AND MAGNETIC PROPERTIES OF Co100-xMnx ALLOYS ON GaAs(001) SURFACE. Acta Physica Sinica, 1999, 48(12): 2320-2326. doi: 10.7498/aps.48.2320 [4] YANG SHI-E, MA BING-XIAN, JIA YU, SHEN SAN-GUO, FAN XI-QING. ELECTRONIC STRUCTURE OF THE ZnSe/GaAs(100) INTERFACES. Acta Physica Sinica, 1998, 47(10): 1704-1712. doi: 10.7498/aps.47.1704 [5] YUAN ZE-LIANG, DING XUN-MIN, HU HAI-TIAN, LI ZHE-SHEN, YANG JIAN-SHU, MIAO XI-YUE, CHEN XI-YING, CAO XIAN-AN, HOU XIAO-YUAN, LU ER-DONG, XU SHI-HONG, XU PENG-SHOU, ZHANG XIN-YI. INVESTIGATION OF NEUTRALIZED (NH4)2S SOLUTION-PASSIVATED GaAs(100) SURFACES. Acta Physica Sinica, 1998, 47(1): 68-74. doi: 10.7498/aps.47.68 [6] ZHANG FA-PEI, XU PENG-SHOU, XU FA-QIANG, LU ER-DONG, SUN YU-MING, ZHANG XIN-YI, ZHU JING-SHENG, LIANG REN-YOU. STUDIES OF INTERFACE FORMATION OF Co/GaAs(100) AND THE MAGNETIC PROPERTY OF ULTRATHIN Co FILMS. Acta Physica Sinica, 1998, 47(4): 692-698. doi: 10.7498/aps.47.692 [7] CHEN XI-YING, DING XUN-MIN, ZHANG SHENG-KUN, ZHANG BO, LU FANG, CAO XIAN-AN, ZHU WEI, HOU XIAO-YUAN. STUDIES OF ELECTRONIC PROPERTIES OF GaS/GaAs INTERFACE. Acta Physica Sinica, 1997, 46(3): 612-617. doi: 10.7498/aps.46.612 [8] XU SHI-HONG, LU ER-DONG, YU XIAO-JIANG, PAN HAI-BIN, ZHANG FA-PEI, XU PENG-SHOU. SRPES STUDY OF THE Sm/Si(100) INTERFACE FORMATION AND ELECTRONIC STRUCTURES. Acta Physica Sinica, 1996, 45(11): 1898-1904. doi: 10.7498/aps.45.1898 [9] LU ER-DONG, XU PENG-SHOU, YU XIAO-JIANG, XU SHI-HONG, PAN HAI-BIN, ZHANG XIN-YI. A NEW METHOD:CH3CSNH2/NH4OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION. Acta Physica Sinica, 1996, 45(4): 715-720. doi: 10.7498/aps.45.715 [10] Chen Wei-De, Jin Gao-Long, Cui Yu-De, Duan Li-Hong, Gao Zhi-Qiang. . Acta Physica Sinica, 1995, 44(8): 1328-1334. doi: 10.7498/aps.44.1328 [11] CHEN YAN, DONG GUO-SHENG, ZHANG MING, Jin Xiao-Feng, LU ER-DONG, PAN HAI-BING, XU PENG-SHOU, ZHANG XIN-YI, FAN CHAO-YANG. . Acta Physica Sinica, 1995, 44(1): 145-151. doi: 10.7498/aps.44.145 [12] ZHANG MING, DONG GUO-SHENG, XU MIN, CHEN YAN, Jin Xiao-Feng, ZHU XING-GUO. . Acta Physica Sinica, 1995, 44(1): 115-121. doi: 10.7498/aps.44.115 [13] WEI XING, GONG DA-WEI, YANG XIAO-PING, LU HONG-QIANG, CUI QIAN, SHENG CHI, ZHANG XIANG-JIU, WANG XUN, WANG QIN-HUA, LU FANG, SUN HENG-HUI. ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATE. Acta Physica Sinica, 1993, 42(12): 1968-1973. doi: 10.7498/aps.42.1968 [14] ZHANG MING, DONG GUO-SHENG, LI ZHE-SHEN, XU MIN, JIN XIAO-FENG, WANG XUN, ZHU XING-GUO. FORMATION AND CHEMICAL REACTION OF THE Mn/GaAs(100) INTERFACE. Acta Physica Sinica, 1993, 42(8): 1333-1339. doi: 10.7498/aps.42.1333 [15] ZHONG ZHAN-TIAN, LUO WEN-ZHE, MOU SHAN-MING, ZHANG KAI-YAN, LI XIA, LI CHENG-FANG. ELECTRONIC SPECTROSCOPY STUDIES OF P2S5/NH4OH TREATED GaAs(100) SURFACE. Acta Physica Sinica, 1992, 41(4): 683-688. doi: 10.7498/aps.41.683 [16] LU XUE-KUN, HOU XIAO-YUAN, DONG GUO-SHENG, DING XUN-MIN. PHOTOELECTRON SPECTROSCOPY STUDIES OF α-P/GaAs (100) INTERFACES. Acta Physica Sinica, 1992, 41(4): 689-696. doi: 10.7498/aps.41.689 [17] LU XUE-KUN. THE Al-GaAs(100)(4×1) INTERFACIAL REACTION STUDIED BY HREELS, XPS AND LEED. Acta Physica Sinica, 1988, 37(11): 1882-1887. doi: 10.7498/aps.37.1882 [18] DING XUN-MIN, DONG GUO-SHENG, YANG SHU, CHEN PING, WANG XUN. AN ELECTRON SPECTROSCOPY STUDY OF THE In/GaAs (111) INTERFACE FORMATION PROCESS. Acta Physica Sinica, 1985, 34(5): 634-639. doi: 10.7498/aps.34.634 [19] DAI DAO-XUAN, TANG HOU-SHUN, NI YU-HONG, YU XI-TONG. AN INVESTIGATION OF Al/GaAs INTERFACE REACTION BY XPS. Acta Physica Sinica, 1983, 32(10): 1328-1332. doi: 10.7498/aps.32.1328 [20] XU YA-BUO, DONG GUO-SHENG, DING XUN-MIN, YANG SHU, WANG XUN. THE UPS STUDY OF GaAs(1OO) SURFACE (4×1) STRUCTURE. Acta Physica Sinica, 1983, 32(10): 1339-1343. doi: 10.7498/aps.32.1339
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20 January 2000
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