[1] |
Feng Jie, Guo Qiang, Shu Peng-Li, Wen Yang, Wen Huan-Fei, Ma Zong-Min, Li Yan-Jun, Liu Jun, Igor Vladimirovich Yaminsky. Measurement of distribution of charge adsorbed on Aux/Si(111)-7×7 surface on an atomic scale in ultra-high vacuum. Acta Physica Sinica,
2023, 72(11): 110701.
doi: 10.7498/aps.72.20230051
|
[2] |
Wang Hui-Yun, Feng Jie, Wang Xu-Dong, Wen Yang, Wei Jiu-Yan, Wen Huan-Fei, Shi Yun-Bo, Ma Zong-Min, Li Yan-Jun, Liu Jun. Measurement of local contact potential difference of atomic scale Au/Si(111)-(7×7) delocalized adsorption state in room-temperature and ultra-high vacuum environment. Acta Physica Sinica,
2022, 71(6): 060702.
doi: 10.7498/aps.71.20211853
|
[3] |
Yan An-Ying, Jiang Ming, Zhang Chuan-Wu, Miao Feng, Gou Fu-Jun. Energy and spectrum of BeO molecule under the electric field from different directions. Acta Physica Sinica,
2010, 59(11): 7743-7748.
doi: 10.7498/aps.59.7743
|
[4] |
Zhao Ming-Hai, Sun Jing-Jing, Wang Dan, Zou Zhi-Qiang, Liang Qi. STM studies of the epitaxial growth of C60 molecules on Si(111)-7×7 surface. Acta Physica Sinica,
2010, 59(1): 636-642.
doi: 10.7498/aps.59.636
|
[5] |
Huang Xiao-Jing, He Su-Zhen, Wu Chen-Xu. Interactions of CO molecules adsorbed on metallic nanostructured surfaces in an external electric field. Acta Physica Sinica,
2006, 55(5): 2454-2458.
doi: 10.7498/aps.55.2454
|
[6] |
Zhang Yong-Peng, Yan Long, Xie Si-Shen, Pang Shi-Jin, Gao Hong-Jun. . Acta Physica Sinica,
2002, 51(2): 296-299.
doi: 10.7498/aps.51.296
|
[7] |
Yan Long, Zhang Yong-Ping, Peng Yi-Ping, Pang Shi-Jin, Gao Hong-Jun. . Acta Physica Sinica,
2002, 51(5): 1017-1021.
doi: 10.7498/aps.51.1017
|
[8] |
YAN LONG, ZHANG YONG-PING, PENG YI-PING, PANG SHI-JIN, GAO HONG-JUN. THE PREFERENTIAL ADSORPTION OF Ge ON Si(111)7×7 SURFACE. Acta Physica Sinica,
2001, 50(11): 2132-2136.
doi: 10.7498/aps.50.2132
|
[9] |
Zhai Guang-Jie, Yang Jian-Shu, Chen Xian-Bang, Wang Xue-Shen. . Acta Physica Sinica,
2000, 49(2): 215-219.
doi: 10.7498/aps.49.215
|
[10] |
ZHAO XUE-YING, ZHAO RU-GUANG, GAI ZHENG, YANG WEI-SHENG. ROOM TEMPERATURE MANIPULATION OF INDIVIDUAL GLYCINE MOLECULES ADSORBED ON THE Cu(111) SURFACE. Acta Physica Sinica,
1998, 47(8): 1304-1310.
doi: 10.7498/aps.47.1304
|
[11] |
LI QUN-XIANG, YANG JIN-LONG, WANG KE-LIN, HOU JIAN-GUO, LI JIA-MING. THEORETICAL STUDY ON THE ELECTRONIC STRUCTURE OF STM TUNGSTEN TIP UNDER EXTERNAL ELECTRIC FIELDS. Acta Physica Sinica,
1998, 47(3): 445-453.
doi: 10.7498/aps.47.445
|
[12] |
WANG FU-HE, YANG JIN-LONG, LI JIA-MING. THE MANIPULATION OF A SINGLE AL ATOM ON AL (111) SURFACE. Acta Physica Sinica,
1998, 47(11): 1827-1839.
doi: 10.7498/aps.47.1827
|
[13] |
NING XTAO-GUANG, YE HENG-QIANG. DIRECT ATOMIC IMAGING OF THE FORMATION OF A 60° DISLOCATION ON THE (111) SURFACE OF Tb4O7. Acta Physica Sinica,
1990, 39(10): 1599-1601.
doi: 10.7498/aps.39.1599
|
[14] |
QIU JI-ZHEN, ZHANG SEN, WANG GANG. RESONANCES OF PHOTOIONIZATION OF Ca AND Sr ATOMS IN AN ELECTRIC FIELD. Acta Physica Sinica,
1989, 38(7): 1172-1176.
doi: 10.7498/aps.38.1172
|
[15] |
LIU HUI-ZHOU, LI ZHE-YIN. THE STABILITY OF STRUCTURE MODELS OF Si(111) 7×7 SURFACE. Acta Physica Sinica,
1989, 38(10): 1569-1577.
doi: 10.7498/aps.38.1569
|
[16] |
LAN TIAN, XU FEI-YUE. SURFACE ATOMIC STRUCTURE OF THE Si (111) 7×7 SURFACE STUDIED BY LOW-ENERGY ELECTRON DIFFRACTION. Acta Physica Sinica,
1989, 38(7): 1077-1085.
doi: 10.7498/aps.38.1077
|
[17] |
ZHU FU-RONG, LUO YAN-SHENG, DAI DAO-XUAN. CHEMISORPTION OF H2O ON Si(111)7×7 SURFACE AT LOW TEMPERATURES. Acta Physica Sinica,
1989, 38(2): 296-300.
doi: 10.7498/aps.38.296
|
[18] |
WANG XIANG-DONG, HU JI-HUANG, DAI DAO-XUAN. TOTAL CURRENT SPECTROSCOPY STUDY ON CLEAN Si(111)7×7 SURFACE. Acta Physica Sinica,
1988, 37(11): 1888-1892.
doi: 10.7498/aps.37.1888
|
[19] |
XU YONG-NIAN, ZHANG KAI-MING. THE GROUP Ⅶ ELEMENTS CHEMISORPTION ON Si(111) AND Ge (111) SURFACES. Acta Physica Sinica,
1984, 33(11): 1619-1623.
doi: 10.7498/aps.33.1619
|
[20] |
ZHANG KAI-MING, YE LING. A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMS. Acta Physica Sinica,
1980, 29(1): 122-126.
doi: 10.7498/aps.29.122
|