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(1)DepartmentofPhysics,UniversityofcjWaterloo,Waterloo,Ontario,Canada,N2L3G1; (2)山东大学物理系,济南250100
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[1] Zhang Pei-Zeng, Li Rui-Shan, Xie Er-Qing, Yang Hua, Wang Xuan, Wang Tao, Feng You-Cai. The fabrication and field emission properties of ZnO nanoparticles-doped diamond-like carbon films by electrochemical deposition. Acta Physica Sinica, 2012, 61(8): 088101. doi: 10.7498/aps.61.088101 [2] Wu Zhong-Hao, Xu Ming, Duan Wen-Qian. Effects of Fe doping on the crystal structures and photoluminescences of ZnO: Ni thin films prepared by sol-gel method. Acta Physica Sinica, 2012, 61(13): 137502. doi: 10.7498/aps.61.137502 [3] Wang De-Yi, Gao Shu-Xia, Li Gang, Zhao Ming. The structure，optical and electrical properties of Li-N dual-acceptor doped p-type ZnO thin films prepared by sol-gel method. Acta Physica Sinica, 2010, 59(5): 3473-3480. doi: 10.7498/aps.59.3473 [4] Wang Pei-Jun, Jiang Mei-Fu, Du Ji-Long, Dai Yong-Feng. Frictional properties of fluorinated diamond-like carbon films prepared by radio frequency reactive magnetron sputtering. Acta Physica Sinica, 2010, 59(12): 8920-8926. doi: 10.7498/aps.59.8920 [5] Xie Jing, Li Bing, Li Yuan-Jie, Yan Pu, Feng Liang-Huan, Cai Ya-Ping, Zheng Jia-Gui, Zhang Jing-Quan, Li Wei, Wu Li-Li, Lei Zhi, Zeng Guang-Gen. Study of ZnS thin films prepared by RF magnetron sputtering technique. Acta Physica Sinica, 2010, 59(8): 5749-5754. doi: 10.7498/aps.59.5749 [6] Wang Zhen-Ning, Jiang Mei-Fu, Ning Zhao-Yuan, Zhu Li. Structure and photoluminescence of Zn2GeO4 polycrystalline films prepared by radio-frequency magnetron sputtering. Acta Physica Sinica, 2008, 57(10): 6507-6512. doi: 10.7498/aps.57.6507 [7] Gu Jian-Feng, Liu Zhi-Wen, Liu Ming, Fu Wei-Jia, Ma Chun-Yu, Zhang Qing-Yu. Two-step growth of ZnO films deposited by reactive radio-frequency magnetron sputtering on Si(001) substrate. Acta Physica Sinica, 2007, 56(4): 2369-2376. doi: 10.7498/aps.56.2369 [8] Lu Xiao, Wu Chuan-Gui, Zhang Wan-Li, Li Yan-Rong. Dielectric breakdown of BST thin films prepared by RF sputtering. Acta Physica Sinica, 2006, 55(5): 2513-2517. doi: 10.7498/aps.55.2513 [9] Tian Ling, Ding Yi, Chen Hao, Liu Jun-Kai, Deng Jin-Xiang, He De-Yan, Chen Guang-Hua. Preparation of cubic boron nitride films by radio frequency sputtering. Acta Physica Sinica, 2006, 55(10): 5441-5443. doi: 10.7498/aps.55.5441 [10] Wang Wen-Jing, Xiao Shu-Qin, Liu Yi-Hua, Chen Wei-Ping, Dai You-Yong, Jiang Shan, Yuan Hui-Min, Yan Shi-Shen. The influence of sputtering power on the giantmagneto-impedance of FeZrBCu film s. Acta Physica Sinica, 2005, 54(4): 1821-1825. doi: 10.7498/aps.54.1821 [11] Wang Yu-Heng, Ma Jin, Ji Feng, Yu Xu-Hu, Zhang Xi-Jian, Ma Hong-Lei. Structural and photoluminescence characters of SnO22:Sb thin films pr epared by rf magnetron sputtering. Acta Physica Sinica, 2005, 54(4): 1731-1735. doi: 10.7498/aps.54.1731 [12] Li Huo-Quan, Ning Zhao-Yuan, Cheng Shan-Hua, Jiang Mei-Fu. Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering. Acta Physica Sinica, 2004, 53(3): 867-870. doi: 10.7498/aps.53.867 [13] Jiang Mei-Fu, Ning Zhao-Yuan. XPS study of fluorinated diamond-like carbon films prepared by reactive magnetron sputtering. Acta Physica Sinica, 2004, 53(9): 3220-3224. doi: 10.7498/aps.53.3220 [14] Lin Hong-Feng, Xie Er-Qing, Ma Zi-Wei, Zhang Jun, Peng Ai-Hua, He De-Yan. Study of 3C-SiC and 4H-SiC films deposited using RF sputtering method. Acta Physica Sinica, 2004, 53(8): 2780-2785. doi: 10.7498/aps.53.2780 [15] Zheng Dai-Shun, Xie Tian, Bai Jian-Min, Wei Fu-Lin, Yang Zheng. . Acta Physica Sinica, 2002, 51(4): 908-912. doi: 10.7498/aps.51.908 [16] Xie Da-Tao, Zhao-Xie, Wang Li-Fang, Zhu Feng, Quan Sheng-Wen, Meng Tie-Jun, Zhang Bao-Cheng, Chen Jia-Er. . Acta Physica Sinica, 2002, 51(6): 1377-1382. doi: 10.7498/aps.51.1377 [17] ZHAO KUN, ZHU FENG, WANG LI-FANG, MENG TIE-JUN, ZHANG BAO-CHENG, ZHAO KUI. INVESTIGATIONS OF TiO2 FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING. Acta Physica Sinica, 2001, 50(7): 1390-1395. doi: 10.7498/aps.50.1390 [18] ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN. THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica, 2001, 50(9): 1800-1804. doi: 10.7498/aps.50.1800 [19] LIU XIANG-NA, WU XIAO-WEI, BAO XI-MAO, HE YU-LIANG. PHOTOLUMINESCENCE FROM NANO-CRYSTALLITES OF SILICON FILMS PREPARED BY PECVD. Acta Physica Sinica, 1994, 43(6): 985-990. doi: 10.7498/aps.43.985 [20] SHI YI-SHENG, ZHAO TE-XIU, LIU HONG-TU, WANG XIAO-PING. A STUDY ON ELECTRICAL RESISTIVITY OF RF SPUTTERING Pd FILMS. Acta Physica Sinica, 1990, 39(11): 1803-1810. doi: 10.7498/aps.39.1803
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Publishing process
- Received Date:
20 May 1994
- Published Online:
05 April 1995
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