| [1] |
Li Chen-Hui, Zhang Chen, Cai Xue-Fen, Zhang Cai-Xin, Yuan Jia-Yi, Deng Hui-Xiong. A review of first-principles calculation methods for defects in semiconductors. Acta Physica Sinica,
2024, 73(6): 066105.
doi: 10.7498/aps.73.20231960
|
| [2] |
Xie Xiu-Hua, Li Bing-Hui, Zhang Zhen-Zhong, Liu Lei, Liu Ke-Wei, Shan Chong-Xin, Shen De-Zhen. Point defects: key issues for II-oxides wide-bandgap semiconductors development. Acta Physica Sinica,
2019, 68(16): 167802.
doi: 10.7498/aps.68.20191043
|
| [3] |
Liu Chang-Ju, Lu Min, Su Wei-An, Dong Tai-Yuan, Shen Wen-Zhong. Recent advance in multiple exciton generation in semiconductor nanocrystals. Acta Physica Sinica,
2018, 67(2): 027302.
doi: 10.7498/aps.67.20171917
|
| [4] |
Yuan Zhen-Kun, Xu Peng, Chen Shi-You. Computational prediction of lattice defects in multinary compound semiconductors as photovoltaic materials. Acta Physica Sinica,
2015, 64(18): 186102.
doi: 10.7498/aps.64.186102
|
| [5] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
doi: 10.7498/aps.61.067801
|
| [6] |
Yang Fu-Hua, Tan Jin, Zhou Cheng-Gang, Luo Hong-Bo. Ab initio studies of CiCs and CiOi defects in Si1-xGex alloys. Acta Physica Sinica,
2008, 57(2): 1109-1116.
doi: 10.7498/aps.57.1109
|
| [7] |
Li Yao-Yi, Cheng Mu-Tian, Zhou Hui-Jun, Liu Shao-Ding, Wang Qu-Quan, Xue Qi-Kun. Efficiency of single photon emission in three-level system of semiconductor quantum dots with pulsed excitation. Acta Physica Sinica,
2006, 55(4): 1781-1786.
doi: 10.7498/aps.55.1781
|
| [8] |
KONG GHUN-YANG, WANG WAN-LU, LIAO KE-JUN, MA YONG, WANG SHU-XIA, FANG LIANG. THE MAGNETORESISTIVE EFFECT OF p-TYPE SEMICONDUCTING DIAMOND FILMS. Acta Physica Sinica,
2001, 50(8): 1616-1622.
doi: 10.7498/aps.50.1616
|
| [9] |
WANG JIAN-PING, XU NA-JUN, ZHANG TING-QING, TANG HUA-LIAN, LIU JIA-LU, LIU CHUAN -YANG, YAO YU-JUAN, PENG HONG-LUN, HE BAO-PING, ZHANG ZHENG-XUAN. TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR. Acta Physica Sinica,
2000, 49(7): 1331-1334.
doi: 10.7498/aps.49.1331
|
| [10] |
WU LIANG-JIN, LIU KUN, CHU JUN-HAO. MEASUREMENT OF RESONANT DEFECT STATES IN NARROW GAP SEMICONDUCTORS. Acta Physica Sinica,
1997, 46(5): 964-968.
doi: 10.7498/aps.46.964
|
| [11] |
XUE FANG-SHI. TRANSFERRED ELECTRON EFFECT BETWEEN DIFFERENT ENERGY VALLEYS IN SEMICONDUCTOR HETEROSTRUCTURE. Acta Physica Sinica,
1990, 39(6): 142-150.
doi: 10.7498/aps.39.142
|
| [12] |
LUO SHI-YU, LIU ZHENG-RONG, SHAO MING-ZHU. ON THE NONLINEAR PROPERTIES OF THE PHOTO-MAGNETOELECTRIC EFFECT IN SEMICONDUCTORS. Acta Physica Sinica,
1987, 36(5): 547-554.
doi: 10.7498/aps.36.547
|
| [13] |
LI MING-FU, REN SHANG-YUAN, MAO DE-QIANG. DISTRIBUTION CHARACTERISTICS OF DEEP LEVEL WAVEFUNCTIONS IN BLOCH SPACE. Acta Physica Sinica,
1985, 34(4): 547-551.
doi: 10.7498/aps.34.547
|
| [14] |
FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG. RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION. Acta Physica Sinica,
1985, 34(12): 1559-1566.
doi: 10.7498/aps.34.1559
|
| [15] |
PENG ZHOU-REN, DU QI-SHI, LI BING-RUI. QUANTUM CHEMISTRY STUDY ON BONDING OF DEFECT STATES IN AMORPHOUS CHALCOGENIDE. Acta Physica Sinica,
1985, 34(4): 542-546.
doi: 10.7498/aps.34.542
|
| [16] |
LI MING-FU, REN SHANG-YUAN, MAO DE-QIANG. THE BEHAVIOR OF DEEP LEVEL WAVEFUNCTIONS IN SHALLOW ENERGY REGION. Acta Physica Sinica,
1984, 33(6): 738-746.
doi: 10.7498/aps.33.738
|
| [17] |
CHEN GUANG-HUA, LIU HUI-CHUN. STATISTICAL THEORY OF DEFECTS AND INPURITIES IN AMORPHOUS SEMICONDUCTORS. Acta Physica Sinica,
1984, 33(1): 93-98.
doi: 10.7498/aps.33.93
|
| [18] |
ZHANG YI-XIANG, HUO YU-PING. THE IMPURITY ENERGY LEVELS IN SEMICONDUCTORS. Acta Physica Sinica,
1966, 22(1): 29-46.
doi: 10.7498/aps.22.29
|
| [19] |
HO YU-PING. THE SHALLOW IMPURITY STATES IN SEMICONDUCTORS. Acta Physica Sinica,
1963, 19(5): 273-284.
doi: 10.7498/aps.19.273
|
| [20] |
WANG SHOU-WU. THE THEORY OF ELECTRON VOLTAIC EFFECT IN SEMICONDUCTOR. Acta Physica Sinica,
1956, 12(1): 66-79.
doi: 10.7498/aps.12.66
|
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