| [1] |
Li Xin, Huang Zhong-Mei, Liu Shi-Rong, Peng Hong-Yan, Huang Wei-Qi. Effect of spin levels broadening in electronic localized states of oxygen-doped nanosilocon localized state. Acta Physica Sinica,
2020, 69(17): 174206.
doi: 10.7498/aps.69.20200336
|
| [2] |
Cao Yu, Xue Lei, Zhou Jing, Wang Yi-Jun, Ni Jian, Zhang Jian-Jun. Developments of c-Si1-xGex:H thin films as near-infrared absorber for thin film silicon solar cells. Acta Physica Sinica,
2016, 65(14): 146801.
doi: 10.7498/aps.65.146801
|
| [3] |
Cao Shan, Liu Jiang-Ping, Li Jun, Wang Kai, Lin Wei, Lei Hai-Le. Infrared absorption characteristics of solid nitrogen at near-triple point temperatures. Acta Physica Sinica,
2015, 64(7): 073301.
doi: 10.7498/aps.64.073301
|
| [4] |
Liu Jiang-Ping, Li Jun, Liu Yuan-Qiong, Lei Hai-Le, Wei Jian-Jun. Infrared absorption of deuterium molecules at low temperature. Acta Physica Sinica,
2014, 63(2): 023301.
doi: 10.7498/aps.63.023301
|
| [5] |
Liu Jiang-Ping, Bi Peng, Lei Hai-Le, Li Jun, Wei Jian-Jun. Infrared absorption spectrum of solid deuterium at near-triple point temperature. Acta Physica Sinica,
2013, 62(16): 163301.
doi: 10.7498/aps.62.163301
|
| [6] |
Li Ya-Ming, Liu Zhi, Xue Chun-Lai, Li Chuan-Bo, Cheng Bu-Wen, Wang Qi-Ming. Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect. Acta Physica Sinica,
2013, 62(11): 114208.
doi: 10.7498/aps.62.114208
|
| [7] |
Wu Tai-Quan. Ge-vacancy complexes in Ge-doped czochralski silicon crystal. Acta Physica Sinica,
2012, 61(6): 063101.
doi: 10.7498/aps.61.063101
|
| [8] |
Fang Xin, Shen Wen-Zhong. Oxygen and carbon behaviors in multi-crystalline silicon and their effect on solar cell conversion efficiency. Acta Physica Sinica,
2011, 60(8): 088801.
doi: 10.7498/aps.60.088801
|
| [9] |
Bi Peng, Liu Yuan-Qiong, Tang Yong-Jian, Yang Xiang-Dong, Lei Hai-Le. Infrared absorption of liquid-hydrogen planar cryotargets. Acta Physica Sinica,
2010, 59(11): 7531-7534.
doi: 10.7498/aps.59.7531
|
| [10] |
Cui Can, Ma Xiang-Yang, Yang De-Ren. Effect of ramping from low temperatures on oxygen precipitation in Czochralski silicon. Acta Physica Sinica,
2008, 57(2): 1037-1042.
doi: 10.7498/aps.57.1037
|
| [11] |
Jiang Le, Yang De-Ｒen, Yu Ｘue-Ｇong, Ma Xiang-Yang, Xu Jin, Que Duan-Lin. Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-te mperature annealing. Acta Physica Sinica,
2003, 52(8): 2000-2004.
doi: 10.7498/aps.52.2000
|
| [12] |
WANG DE-HE. ATOMIC CORRELATIONS IN AMORPHOUS Si AND Ge AND STRUCTURAL MODEL. Acta Physica Sinica,
1992, 41(5): 792-797.
doi: 10.7498/aps.41.792
|
| [13] |
LING PING, HUANG XI-HUAI. OPTICAL ABSORPTION PROPERTY OF TiO2-DOPED VYCOR GLASS. Acta Physica Sinica,
1988, 37(11): 1876-1881.
doi: 10.7498/aps.37.1876
|
| [14] |
DU YONG-CHANG, YAN MAO-XUN, ZHANG YU-FENG, GUO HAI, HU KE-LIANG. INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON. Acta Physica Sinica,
1987, 36(11): 1427-1432.
doi: 10.7498/aps.36.1427
|
| [15] |
WANG GUO-LIANG, DAI PEI-YING, FAN XI-QING, JIANG WANG-YE, LIU FU-SUI. THEORY OF ULTRASONIC ABSORPTION WITH INFRARED DIVERGENCE IN GLASSES AT LOW TEMPERATURES. Acta Physica Sinica,
1987, 36(11): 1441-1450.
doi: 10.7498/aps.36.1441
|
| [16] |
ZHANG YU-FENG, DU YONG-CHANG, WENG SHI-FU, MENG XIANG-TI, ZHANG BING-ZHONG. INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica,
1985, 34(7): 849-859.
doi: 10.7498/aps.34.849
|
| [17] |
CUI SHU-FAN, MAI ZHEN-HONG, CHU XI. SHIFT OF FREQUENCIES OF Si—H INFRARED ABSORPTION SPECTRA IN SOLID STATE SILICON. Acta Physica Sinica,
1985, 34(8): 1096-1101.
doi: 10.7498/aps.34.1096
|
| [18] |
CHOW JYE, WANG ZHEN-GUO, LOU ZHE-GONG, WANG WAN-LIAN, YUO SHIN-KAI. LOW TEMPERATURE ELECTRICAL PROPERTIES OF SILICON MATERIAL. Acta Physica Sinica,
1966, 22(4): 404-411.
doi: 10.7498/aps.22.404
|
| [19] |
T. F. HU, C. WEI, C. S. CHANG. GE IR INTERFEREMETER. Acta Physica Sinica,
1964, 20(11): 1164-1171.
doi: 10.7498/aps.20.1164
|
| [20] |
ZHUANG WEI-HWA, PAN GUI-SHENG. MEASUREMENT OF MINORITY CARRIER LIFETIME IN Ge AND Si BY THE SPREADING-RESISTANCEPHOTO-DECAY METHOD. Acta Physica Sinica,
1963, 19(3): 191-201.
doi: 10.7498/aps.19.191
|
下载:
