| [1] |
Sun Zhi-Hai, Huang Qiang, Zhang Ying, Huang Peng-Ru, Zhi Hui-Yin, Zou Yong-Jin, Xu Fen, Sun Li-Xian. First-principle calculation study of (CN)3VB defect in hexagonal boron nitride monolayer. Acta Physica Sinica,
2021, 70(3): 033102.
doi: 10.7498/aps.70.20201364
|
| [2] |
Su Xin-Yu, Wang Li-Jia, Zhu Yan-Chun. A new method of multi- atlas segmentation of right ventricle based on cardiac film magnetic resonance images. Acta Physica Sinica,
2019, 68(19): 190701.
doi: 10.7498/aps.68.20190582
|
| [3] |
Zang Hang, Huang Zhi-Sheng, Li Tao, Guo Rong-Ming. Comparative study of irradiation swelling in monocrystalline and polycrystalline silicon carbide. Acta Physica Sinica,
2017, 66(6): 066104.
doi: 10.7498/aps.66.066104
|
| [4] |
Xiao Hong-Yu, Qin Yu-Kun, Sui Yong-Ming, Liang Zhong-Zhu, Liu Li-Na, Zhang Yong-Sheng. Effects of cavity size on the growth of hexahedral type-Ib gem-diamond single crystals. Acta Physica Sinica,
2016, 65(7): 070705.
doi: 10.7498/aps.65.070705
|
| [5] |
Zheng Xin, Jiang Tian, Cheng Xiang-Ai, Jiang Hou-Man, Lu Qi-Sheng. A new phenomenon of photoconductive InSb detector under the irradiation of out-band laser. Acta Physica Sinica,
2012, 61(4): 047302.
doi: 10.7498/aps.61.047302
|
| [6] |
Yue Xiao-Lin, Wang Jin-Dong, Wei Zheng-Jun, Guo Bang-Hong, Liu Song-Hao. A new multi-wavelength two-way quantum key distribution system with a single optical source. Acta Physica Sinica,
2012, 61(18): 184215.
doi: 10.7498/aps.61.184215
|
| [7] |
Wang Li-Hong, You Jing-Lin, Wang Yuan-Yuan, Zheng Shao-Bo, Simon Patrick, Hou Min, Ji Zi-Fang. Temperature dependent Raman spectra and micro-structure study of hexagonal MgTiO3 crystal. Acta Physica Sinica,
2011, 60(10): 104209.
doi: 10.7498/aps.60.104209
|
| [8] |
Lin Zheng, Liu Min. Y elastic constants of polycrystalline materials with hexagonal system structure. Acta Physica Sinica,
2009, 58(12): 8511-8521.
doi: 10.7498/aps.58.8511
|
| [9] |
Lü Hui-Min, Shi Zhen-Hai, Chen Guang-De. Synthesis of pure hexagonal phase aluminium nitride foam. Acta Physica Sinica,
2009, 58(9): 6403-6407.
doi: 10.7498/aps.58.6403
|
| [10] |
Ye Hong-Gang, Chen Guang-De, Zhu You-Zhang, Zhang Jun-Wu. First principle study of the native defects in hexagonal aluminum nitride. Acta Physica Sinica,
2007, 56(9): 5376-5381.
doi: 10.7498/aps.56.5376
|
| [11] |
Wang Rui-Min, Chen Guang-De, Zhu You-Zhang. Micro-Raman scattering study of hexagonal InGaN epitaxial layer. Acta Physica Sinica,
2006, 55(2): 914-919.
doi: 10.7498/aps.55.914
|
| [12] |
Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica,
2006, 55(6): 2977-2981.
doi: 10.7498/aps.55.2977
|
| [13] |
Pan Wei, Shen Wen-Zhong. Carrier transport characteristics in hexagonal InN thin films. Acta Physica Sinica,
2004, 53(5): 1501-1506.
doi: 10.7498/aps.53.1501
|
| [14] |
Jiang Zhen-Yi, Xu Xiao-Hong, Wu Hai-Shun, Zhang Fu-Qiang, Jin Zhi-Hao. . Acta Physica Sinica,
2002, 51(7): 1586-1590.
doi: 10.7498/aps.51.1586
|
| [15] |
LIU PU-KUN, XIONG CAI-DONG, LIU SHENG-GANG, TANG CHANG-JIAN, QIAN SHANG-JIE. A NEW PLASMA MASER SCHEME——THE ION-CHANNEL ELECTRON CYCLOTRON MASER. Acta Physica Sinica,
1997, 46(5): 892-896.
doi: 10.7498/aps.46.892
|
| [16] |
LIU XIAO-BING, XIONG ZU-HONG, YUAN SHUAI, LIAO LIANG-SHENG, HE JUN, CAO XIAN-AN, MIAO XI-YUE, DING XUN-MIN, HOU XIAO-YUAN. A NEW METHOD FOR POST TREATMENT OF POROUS SILICON:SULFUR PASSIVATION BY MICROWAVE PLASMA ASSISTANCE. Acta Physica Sinica,
1997, 46(10): 2059-2065.
doi: 10.7498/aps.46.2059
|
| [17] |
LIANG JIN-ZHONG, LAI ZONG-HE, WU YU-KUN, GUO KE-XIN. THE HEXAGONAL METASTABLE PHASE FORMED IN AN AMORPHOUS Ni-P ALLOY DURING CRYSTALLIZATION (Ⅲ)——HEXAGONAL POLYTYPE. Acta Physica Sinica,
1984, 33(7): 1037-1039.
doi: 10.7498/aps.33.1037
|
| [18] |
CHENG ZHAO-NIAN, ZHU WEN-YU, WANG WEI-YUAN. CALCULATION OF RANGE STATISTIC PARAMETERS FOR IONS IMPLANTED IN GaAs. Acta Physica Sinica,
1982, 31(7): 922-931.
doi: 10.7498/aps.31.922
|
| [19] |
KUO CHANG-LIN. AN X-RAY METHOD FOR IDENTIFYING COALESCENCE SEQUENCE OF SILICON CARBIDE POLYTYPES. Acta Physica Sinica,
1965, 21(3): 503-507.
doi: 10.7498/aps.21.503
|
| [20] |
KUO CHANG-LIN. TWO NEW POLYTYPES OF SILICON CARBIDE 417R AND 453R. Acta Physica Sinica,
1964, 20(5): 444-456.
doi: 10.7498/aps.20.444
|
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