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过渡金属氧化物异质结界面处各种自由度之间的耦合与竞争关系, 极大地丰富了其物理性质, 并拓展了相关应用范围. 已有研究报道指出维度是调控氧化物异质结性能的有效手段. 本文采用脉冲激光沉积技术制备出高质量外延生长的 SrCuO2/La0.7Ca0.3MnO3 (SCO/LCMO)超晶格, 通过控制维度实现了对超晶格中交换耦合效应的有效调控. 实验发现, 在改变 SCO 厚度的过程中, 其结构将由无限层状构型转变为链状构型, 进而导致异质结界面处氧配位环境的改变. X 射线吸收谱测试证实超晶格中存在电荷转移现象. 在 SCO 较薄时, Mn-O-Cu 之间超交换作用产生的弱磁矩将钉扎铁磁 LCMO 层. 随着 SCO 厚度的增加, 异质结界面处电荷转移减小. 与此同时, SCO 层具有的反铁磁序与邻近铁磁层 LCMO 作用, 导致了交换偏置的产生. 本实验证实了维度在氧化物异质结多功能调控中的重要作用.The coupling and competition between various degrees of freedom at the interface of transition metal oxide heterointerfaces greatly enrich their physical properties and expand their relevant application scope. It has been reported that dimensionality is an effective method to regulate the properties of oxide heterostructure. The structure of SCO film exhibits a planar-type-to-chain-type transformation with the change of thickness. In this work, the high-quality SCO/LCMO superlattices are deposited by a pulsed laser deposition system. And the interfacial exchange coupling effect is effectively manipulated by controlling the dimensionality of SCO layer. X-ray absorption spectrum (XAS) measurement shows that the charge transfer occurs at the heterointerface. When the SCO layer is thin, the interfacial superexchange coupling supported by charge transfer generates a weak magnetic moment to pin the ferromagnetic LCMO layer. As the SCO layer thickens, the charge transfer will decrease. Meanwhile, the long-range antiferromagnetic order in thicken SCO layer can interact with LCMO layer, resulting in the exchange bias effect. This experiment confirms the important role of dimensionality in modulating the properties in multifunctional oxide heterostructure.
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Keywords:
- dimensionality /
- exchange bias effect /
- copper oxide /
- manganese oxide
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图 1 (a) SCO/LCMO 超晶格沉积顺序示意图; (b) L8S2 超晶格样品的部分 RHEED 衍射振荡. 其中, 黄色代表 SCO 层, 紫色代表 LCMO 层
Fig. 1. (a) Schematic diagram of deposition sequence of SCO/LCMO superlattices; (b) a part of RHEED oscillation intensity of L8S2 superlattices. Yellow represents the SCO layer, purple represents the L8S2 layer.
图 2 (a) 不同厚度超晶格样品的 XRD 衍射图, 其中, 单层 LCMO及 SCO 作为参照样品; (b) 超晶格面外晶格常数随 SCO 厚度的变化
Fig. 2. (a) XRD spectra of samples with different thickness, where the single LCMO and SCO are as reference; (b) the out-of-plane lattice parameter as a function of SCO thickness in superlattice.
图 3 (a) L8S2, (b) L8S5, (c) L8S8样品的 AFM 测试图
Fig. 3. AFM images of (a) L8S2, (b) L8S5, and (c) L8S8Sample.
图 4 (a)—(c) L8Sn 超晶格样品的磁性表征(1 emu = 103 A·m2, 1 Oe = 103/(4π) A/m), 其中测试温度为 5 K; (d) HEB (左侧)和MS (右侧) 随SCO 厚度的变化
Fig. 4. (a)–(c) Magnetic measurement of L8Sn superlattice at 5 K; (d) the dependence of HEB (left axis) and MS (right axis) with thickness of SCO layer.
图 5 一系列超晶格样品的(a) Mn L-edge和 (b) Cu L-edge 的 XAS 吸收谱图
Fig. 5. (a) Mn L-edge and (b) Cu L-edge of XAS spectra of a series of samples.
图 6 SCO 为链状(a)或无限层状(b)构型时, 超晶格界面处的原子构型示意图
Fig. 6. Interfacial structure of superlattices when SCO layer shows (a) chain-type or (b) planner-type configuration.
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[1] Chen S R, Zhang Q H, Li X J, Zhao J L, Lin S, Jin Q, Hong H T, Huon A, Charlton T, Li Q, Yan W S, Wang J O, Ge C, Wang C, Wang B T, Fitzsimmons M R, Guo H Z, Gu L, Yin W, Jin K J, Guo E J 2022 Sci. Adv. 8 eabq3981
Google Scholar
[2] Lin S, Zhang Q H, Sang X H, Zhao J L, Cheng S, Huon A, Jin Q, Chen S, Chen S G, Cui W J, Guo H Z, He M, Ge C, Wang C, Wang J O, Fitzsimmons M R, Gu L, Zhu T, Jin K J, Guo E J 2021 Nano Lett. 21 3146
Google Scholar
[3] Yi D, Liu J, Hsu S L, Zhang L P, Choi Y S, Kim J W, Chen Z H, Clarkson J D, Serrao C R, Arenholz E, Ryan P J, Xu H X, Birgeneau R J, Ramesh R 2016 PNAS 113 6397
Google Scholar
[4] Huang K, Wu L, Wang M Y, Swain N, Motapothula M, Luo Y Z, Han K, Chen M F, Ye C, Yang A J, Xu H, Qi D C, N'Diaye A T, Panagopoulos C, Primetzhofer D, Shen L, Sengupta P, Ma J, Feng Z X, Nan C W, Wang X R 2020 Appl. Phys. Rev. 7 011401
Google Scholar
[5] Wu M, Zhang X W, Li X M, Qu K, Sun Y W, Han B, Zhu R X, Gao X Y, Zhang J M, Liu K H, Bai X D, Li X Z, Gao P 2022 Nat. Commun. 13 216
Google Scholar
[6] Grutter A J, Vailionis A, Borchers J A, Kirby B J, Flint C L, He C, Arenholz E, Suzuki Y 2016 Nano Lett. 16 5647
Google Scholar
[7] Ji H H, Liu X, Li Z L, Jiao Y J, Ren G X, Dou J R, Zhou X C, Zhou G W, Chen J S, Xu X H, 2024 J. Alloys Compd. 979 173489
Google Scholar
[8] Shi W X, Zheng J, Li Z, Wang M Q, Zhu Z Z, Zhang J E, Zhang H, Chen Y Z, Hu F X, Shen B G, Chen Y S, Sun J R 2023 Small 20 2308172
Google Scholar
[9] Liao Z L, Skoropata E, Freeland J W, Guo E J, Desautels R, Gao X, Sohn C, Rastogi A, Ward T Z, Zou T, Charlton T, Fitzsimmons M R, Lee H N 2019 Nat. Commun. 10 589
Google Scholar
[10] Zhou G W, Ji H H, Yan Z, Cai M M, Kang P H, Zhang J, Lu J D, Zhang J X, Chen J S, Xu X H 2022 Sci. Chin. Mater. 65 1902
Google Scholar
[11] Flint C L, Vailionis A, Zhou H, Jang H, Lee J S, Suzuki Y 2017 Phys. Rev. B 96 144438
Google Scholar
[12] Grutter A J, Yang H, Kirby B J, Fitzsimmons M R, Aguiar J A, Browning N D, Jenkins C A, Arenholz E, Mehta V V, Alaan U S, Suzuki Y 2013 Phys. Rev. Lett. 111 087202
Google Scholar
[13] Chandrasena R U, Flint C L, Yang W, Arab A, Nemšák S, Gehlmann M, Özdöl V B, Bisti F, Wijesekara K D, Meyer-Ilse J, Gullikson E, Arenholz E, Ciston J, Schneider C M, Strocov V N, Suzuki Y, Gray A X 2018 Phys. Rev. B 98 155103
Google Scholar
[14] Shi W X, Zhang J, Zhan X Z, Li J L, Li Z, Zheng J, Wang M Q, Zhang J E, Zhang H, Zhu T, Chen Y Z, Hu F X, Shen B G, Chen Y S, Sun J R 2024 Appl. Phys. Rev. 11 021403
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Google Scholar
Chen S R, Lin S, Hong H T, Cui T, Jin Q, Wang C, Jin K J, Guo E J 2023 Acta Phys. Sin. 72 097502
Google Scholar
[17] Li S S, Zhang Q H, Lin S, Sang X H, Need R F, Roldan M A, Cui W J, Hu Z Y, Jin Q, Chen S, Zhao J L, Wang J O, Wang J S, He M, Ge C, Wang C, Lu H B, Wu Z P, Guo H Z, Tong X, Zhu T, Kirby B, Gu L, Jin K J, Guo E J 2021 Adv. Mater. 33 2001324
Google Scholar
[18] Samal D, Tan H Y, Molegraaf H, Kuiper B, Siemons W, Bals S, Verbeeck J, Tendeloo G, Takamura Y, Arenholz E, Jenkins C A, Rijnders G, Koste G 2013 Phys. Revi. Lett. 111 096102
Google Scholar
[19] Smink A E M, Birkhölzer Y A, Dam J V, Roesthuis F J G, Rijnders G, Hilgenkamp H, Koster G 2020 Phys. Rev. Mater. 4 083806
Google Scholar
[20] Zhang Z X, Shao J F, Jin F, Dai K J, Li J Y, Lan D, Hua E, Han Y Y, Wei L, Cheng F, Ge B H, Wang L F, Zhao Y, Wu W B 2022 Nano Lett. 22 7328
Google Scholar
[21] Hasegawa S 2012 Charact. Mater. 97 1925
Google Scholar
[22] Infante I C, Sánchez F, Wojcik M, Jedryka E, Estradé S, Peiró F, Arbiol J, Laukhin V, Espinós J P 2007 Phys. Rev. B 76 224415
Google Scholar
[23] Hadjimichael M, Waelchli A, Mundet B, Mckeown Walker S, De Luca G, Herrero-Martin J, Gibert M, Gariglio S, Triscone J M 2022 APL Mater. 10 101112
Google Scholar
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Google Scholar
[25] Ohldag H, Scholl A, Nolting F, Arenholz E, Maat S, Young A T, Carey M, Stöhr J 2003 Phys. Rev. Lett. 91 017203
Google Scholar
[26] Maniv E, Murphy R A, Haley S C, Doyle S, John C, Maniv A, Ramakrishna S K, Tang Y L, Ercius P, Ramesh R, Reyes A P, Long J R, Analytis J G 2021 Nat. Phys. 17 525
Google Scholar
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Google Scholar
[28] Yang N, Castro D D, Aruta C, Mazzoli C, Minola M, Brookes N B, Sala M M, Prellie W, Lebedev O I, Tebano A, Balestrino G 2012 J. Appl. Phys. 112 123901
Google Scholar
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Google Scholar
[31] Zhang Z C, Hansmann P 2017 Phys. Rev. X 7 011023
[32] Chen H H, Millis A 2017 J. Phys. Condens. Matter 29 243001
Google Scholar
[33] Han F R, Chen X B, Wang J L, Huang X D, Zhang J E, Song J H, Liu B G, Chen Y S, Bai X D, Hu F X, Shen B G, Sun J R 2021 J. Phys. D: Appl. Phys. 54 185302
Google Scholar
[34] Ji H H, Zhou G W, Wang X, Zhang J, Kang P, Xu X 2021 ACS Appl Mater Interfaces 13 15774
Google Scholar
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