电致红外发射率动态调控器件研究进展

程柏璋; 祝玉林; 伊洋; 陶鑫; 贾岩; 刘东青; 程海峰

doi:10.7498/aps.70.20210211

摘要

电致红外发射率动态调控器件是一类在电场激励下红外发射率能发生可逆动态变化的器件, 该类器件在自适应红外伪装、航天器智能热控等领域具有重要应用价值, 已成为红外辐射调控领域的研究前沿和热点. 本文概述了基于金属氧化物、导电聚合物、石墨烯、金属等材料的电致红外发射率动态调控器件的工作原理、研究进展, 并分析了电致红外发射率动态调控器件的发展趋势.

关键词:

Infrared electrochromic device is a kind of device whose infrared emissivity can change reversibly under electric field excitation. This kind of device has important applications in the fields of adaptive infrared camouflage and intelligent thermal control, and has become a research frontier and hot spot in the field of infrared radiation control. In this paper, the working principle, research status and progress of infrared electrochromic devices based on metal oxides, conductive polymers, graphene and metals are summarized, and the development trend of infrared electrochromic device is analyzed.

Keywords:

infrared emissivity /
dynamic regulation /
adapted infrared camouflage /
intelligent thermal control of spacecraft

作者及机构信息

1.
国防科技大学空天科学学院, 长沙　410073

2.
中国人民解放军32382部队, 武汉　430311

3.
中国人民解放军32381部队, 北京　100072

通信作者: 刘东青, liudongqing07@nudt.edu.cn

基金项目: 国家自然科学基金(批准号: 52073303)资助的课题

Authors and contacts

1.
School of Space Science, National University of Defense Technology, Changsha 410073, China

2.
Unit 32382 of the PLA, Wuhan 430311, China

3.
Unit 32381 of the PLA, Beijing 100072, China

Corresponding author: Liu Dong-Qing, liudongqing07@nudt.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 52073303)

文章全文 : translate this paragraph

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施引文献

图 1 不同类型的WO₃电致发射率动态调控器件　(a)多孔电极式^[13]; (b)半导体电极式^[19]; (c)金属网格电极式^[18]; (d)超材料电极式^[27]; (e) ITO电极式^[29]

Fig. 1. Several WO₃ infrared electrochromic devices: (a) Device with porous electrode^[13]; (b) device with semiconductor electrode^[19]; (c) device with metal grid electrode^[18]; (d) device with metamaterials electrode^[27]; (e) device with ITO electrode^[29].

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图 2 (a) LTO器件结构及工作原理示意图^[32]; (b) LTO相变过程示意图^[32]; (c) 器件在不同状态下的反射率曲线^[32]

Fig. 2. (a) Schematic diagram of structure and working principle of LTO device^[32]; (b) phase transition process of LTO^[32]; (c) the reflectivity curves of the LTO device in different states^[32].

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图 3 (a) VO₂器件结构示意图^[34]; (b)器件高发射率态的红外热图^[34]; (c)器件低发射率态的红外热图^[34]

Fig. 3. (a) Schematic diagram of structure of VO₂ device^[34]; (b) thermal image of VO₂ device in high emissivity state^[34]; (c) thermal image of VO₂ device in low emissivity state^[34].

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图 4 (a)金属网格电极器件结构^[38]; (b)多孔电极器件结构^[11]

Fig. 4. (a) The structural diagram of device with metal grid electrode^[38]; (b) the structural diagram of the device with porous electrode^[11].

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图 5 (a)透射式噻吩器件结构及红外透过性调控效果^[46]; (b)横向式噻吩器件结构及红外热图^[47]

Fig. 5. (a) The structure and regulation effect of infrared transmittance of transmission thiophene device^[46]; (b) structure and infrared discoloration image of transverse discoloration thiophene device^[47].

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图 6 (a)石墨烯器件结构及红外热图^[56]; (b)织物石墨烯器件外观及反射率光谱^[57]

Fig. 6. (a) Structure and thermal map of graphene device^[56]; (b) appearance and reflectivity curves of fabric graphene device^[57].

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图 7 (a)多壁碳纳米管器件结构示意图^[61]; (b)多壁碳纳米管微观结构示意图^[61]; (c)柔性器件的红外伪装效果^[61]; (d)不同掺杂程度器件的红外热图^[61]

Fig. 7. (a) Structure diagram of multi-walled CNT device^[61]; (b) schematic diagram of microstructure of multi-walled CNT^[61]; (c) infrared camouflage effect of flexible multi-walled CNT device^[61]; (d) infrared thermal maps of multi-walled CNT devices in different states^[61].

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图 8 (a)超表面石墨烯器件表面微元结构示意图^[65]; (b)金纳米微元阵列^[65]; (c)不同栅极电压下的器件反射率光谱^[65]

Fig. 8. (a) Chematic diagram of surface microelement structure of metasurface graphene device^[65]; (b) gold electrode array^[65]; (c) IR reflectance curves of the device for different gate voltages^[65].

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图 9 (a)基于石墨烯电极的器件的结构及红外热图^[70]; (b) 基于Pt电极刚性器件的工作过程及不同通电时间下的反射率曲线^[71]; (c)基于Pt电极柔性器件的红外伪装效果及不同通电时间下柔性器件的反射率曲线^[71]

Fig. 9. (a) Schematic diagram of device structure and thermal maps based on graphene electrode^[70]; (b) diagram of working process and the reflectivity curves of rigid device based on Pt electrode at different times of energization^[71]; (c) infrared camouflage effect and reflectivity curves of flexible device at different times of energization^[71].

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表 1 几类红外发射率动态调控器件的主要性能最优值^{[17,27,32,34,39,45,56,61,71]}

Table 1. The optimum values of main performance of several kinds of IR emissivity adjustable devices^{[17,27,32,34,39,45,56,61,71]}.

主要性能	金属氧化物类	导电聚合物类	石墨烯类	金属类
调控量	0.800 (7—12 μm)	0.553 (8—14 μm)	0.550 (7.5—13 μm)	0.770 (8—14 μm)
响应时间/s	1.6	1.0	1$ \times $10^–9	10
循环寿命/次	100000	900	3500	400
多波段兼容性	红外	可见光-红外	可见光-红外-微波	可见光-红外
工艺复杂程度	较复杂	简单	复杂	简单
制备成本	较高	较低	高	较高

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map

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