高质量单层二硫化钼薄膜的研究进展

魏争; 王琴琴; 郭玉拓; 李佳蔚; 时东霞; 张广宇

doi:10.7498/aps.67.20180732

摘要

作为一种新型的二维半导体材料，单层二硫化钼薄膜由于其优异的特性，在电子学与光电子学等众多领域具有潜在的应用价值.本文综述了我们课题组在过去几年中针对单层二硫化钼薄膜的研究所取得的进展，具体包括：在二硫化钼薄膜的制备方面，通过氧辅助化学气相沉积方法，实现了大尺寸单层二硫化钼单晶的可控生长和晶圆级单层二硫化钼薄膜的高定向外延生长；在二硫化钼薄膜的加工方面，发展了单层二硫化钼薄膜的无损转移、洁净图案化加工、可控结构相变与局域相调控的方法，为场效应晶体管等电子学器件的制备与性能优化提供了基础；在二硫化钼异质结方面，研究了二硫化钼薄膜与其他二维材料形成的异质结的电学以及光电性质，为二维材料异质结的构筑和器件特性研究提供了实验参考；在二硫化钼薄膜功能化器件与应用方面，构筑了全二维材料、亚5 nm超短沟道场效应晶体管器件，验证了单层二硫化钼对短沟道效应的有效抑制及其在5 nm工艺节点器件中的应用优势；此外，利用制备的高质量单层二硫化钼和发展的器件洁净加工技术，实现了高性能柔性薄膜晶体管的集成，获得了超高灵敏度与稳定性的非接触型湿度传感器.我们在二硫化钼薄膜的制备、加工以及器件特性研究方面所取得的进展对于二硫化钼及其他二维过渡金属硫属化合物的基础和应用研究均具有指导意义.

关键词:

Abstract

As an emerging two-dimensional (2D) material, monolayer molybdenum disulfide films show excellent electrical and optical properties and have aroused great interest due to their potential applications in electronics and optoelectronics. In this paper, we review our works about molybdenum disulfide films in the past few years. Chemical vapor deposition (CVD) is a convenient and low-cost method to synthesize 2D materials. By oxygen-assisted CVD, the wafer-scale highly-oriented monolayer molybdenum disulfide films and large single-crystal monolayer molybdenum disulfide on various substrates have been prepared epitaxially. Preparation of high-quality monolayer molybdenum disulfide films is the key to measure its intrinsic properties and realize its large-scale applications. Besides the preparation of high-quality materials, the optimizing of transfer technique and fabrication technique are of equal importance for improving the properties of electronic and optoelectronic devices. Water-assisted lossless transfer, patterned peeling, structural change and local phase transition of monolayer molybdenum disulfide films pave the way for preparing and optimizing the functionalized devices. For example, water-assisted transfer and patterned peeling provide methods of preparing molybdenum disulfide samples with clean surfaces and interfaces. Phase transition in the contact area of field-effect transistor reduces the contact resistance effectively, which improves the electrical performance. In addition, the heterojunctions of molybdenum disulfide and other 2D materials show novel electrical and optical properties. As for the functional devices, ultrashort-channel field-effect transistors, integrated flexible thin film transistors, and humidity sensor array have been realized with monolayer molybdenum disulfide films. A grain boundary widening technique is developed to fabricate graphene electrodes for ultrashort-channel monolayer molybdenum disulfide transistors. Field-effect transistors with channel lengths scaling down to 4 nm can be realized reliably and exhibit superior performances, such as the nearly Ohmic contacts and excellent immunity to short channel effects. Furthermore, monolayer molybdenum disulfide films show excellent electrical properties in the measurement of integrated flexible thin film transistors. Under a uniaxial stain of 1%, the performance of the device shows no obvious change, revealing not only the high quality of CVD-grown molybdenum disulfide films, but also the stabilities of these flexible thin film transistor devices. Molybdenum disulfide humidity sensor array for noncontact sensation also shows high sensitivity and stability. Mobility and on/off ratio of the devices in the array decrease linearly with the relative humidity increasing, leading to a high sensitivity of more than 104. The study of monolayer molybdenum disulfide films is universal and instructive for other 2D transition metal dichalcogenides.

Keywords:

作者及机构信息

1.
中国科学院物理研究所, 北京凝聚态物理国家研究中心, 中国科学院纳米物理与器件重点实验室, 北京 100190;

2.
中国科学院大学物理科学学院, 北京 100049;

3.
纳米材料与器件物理北京市重点实验室, 北京 100190;

4.
量子物质科学协同创新中心, 北京 100190

通信作者: 时东霞, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn ; 张广宇, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn

基金项目: 国家自然科学基金（批准号：51572289，61734001）、国家重点研发计划（批准号：2016YFA0300904）、中国科学院前沿科学重点研究项目（批准号：QYZDB-SSW-SLH004）和中国科学院先导（B）培育项目（批准号：XDPB06）资助的课题.

Authors and contacts

1.
CAS Key Laboratory of Nanoscale Physics and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

2.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;

3.
Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;

4.
Collaborative Innovation Center of Quantum Matter, Beijing 100190, China

Corresponding author: Shi Dong-Xia, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn ; Zhang Guang-Yu, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51572289, 61734001), the National Key RD Program of China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDPB06).

参考文献

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[2]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
[3]	Cui X, Lee G H, Kim Y D, Arefe G, Huang P Y, Lee C H, Chenet D A, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen B S, Watanabe K, Taniguchi T, Muller D A, Low T, Kim P, Hone J 2015 Nat. Nanotechnol. 10 534
[4]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotechnol. 8 497
[5]	Pu J, Yomogida Y, Liu K K, Li L J, Iwasa Y, Takenobu T 2012 Nano Lett. 12 4013
[6]	Wang H, Yu L L, Lee Y H, Shi Y M, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[7]	Tan L K, Liu B, Teng J H, Guo S H, Low H Y, Loh K P 2014 Nanoscale 6 10584
[8]	Liu H J, Jiao L, Yang F, Cai Y, Wu X X, Ho W K, Gao C L, Jia J F, Wang N, Fan H, Yao W, Xie M H 2014 Phys. Rev. Lett. 113 066105
[9]	Serna M I, Yoo S H, Moreno S, Xi Y, Oviedo J P, Choi H, Alshareef H N, Kim M J, Minary-Jolandan M, Quevedo-Lopez M A 2016 ACS Nano 10 6054
[10]	Li H N, Li Y, Aljarb A, Shi Y M, Li L J 2017 Chem. Rev. 7b00212
[11]	Kang K, Xie S, Huang L, Han Y, Huang P Y, Mak K F, Kim C J, Muller D, Park J 2015 Nature 520 656
[12]	Lin Y C, Zhang W J, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W, Li L J 2012 Nanoscale 4 6637
[13]	Kang K, Lee K H, Han Y, Gao H, Xie S, Muller D A, Park J 2017 Nature 550 229
[14]	Das S, Chen H Y, Penumatcha A V, Appenzeller J 2013 Nano Lett. 13 100
[15]	Zheng J Y, Yan X X, Lu Z X, Qiu H L, Xu G C, Zhou X, Wang P, Pan X Q, Liu K H, Jiao L Y 2017 Adv. Mater. 29 1604540
[16]	Kappera R, Voiry D, Yalcin S E, Branch B, Gupta G, Mohite A D, Chhowalla M 2014 Nat. Mater. 13 1128
[17]	Zhang J, Yu H, Chen W, Tian X Z, Liu D H, Cheng M, Xie G B, Yang W, Yang R, Bai X D, Shi D X, Zhang G Y 2014 ACS Nano 8 6024
[18]	Chen W, Zhao J, Zhang J, Gu L, Yang Z Z, Li X M, Yu H, Zhu X T, Yang R, Shi D X, Lin X C, Guo J D, Bai X D, Zhang G Y 2015 J. Am. Chem. Soc. 137 15632
[19]	Yu H, Yang Z Z, Du L J, Zhang J, Shi J N, Chen W, Chen P, Liao M Z, Zhao J, Meng J L, Wang G L, Zhu J Q, Yang R, Shi D X, Gu L, Zhang G Y 2017 Small 13 1603005
[20]	Yu H, Liao M, Zhao W, Liu G, Zhou X J, Wei Z, Xu X, Liu K, Hu Z, Deng K, Zhou S, Shi J A, Gu L, Shen C, Zhang T, Du L, Xie L, Zhu J, Chen W, Yang R, Shi D, Zhang G 2017 ACS Nano 11 12001
[21]	Zhao J, Yu H, Chen W, Yang R, Zhu J Q, Liao M Z, Shi D X, Zhang G Y 2016 ACS Appl. Mater. Interfaces 8 16546
[22]	Meng J L, Wang G L, Li X M, Lu X B, Zhang J, Yu H, Chen W, Du L J, Liao M Z, Zhao J, Chen P, Zhu J Q, Bai X D, Shi D X, Zhang G Y 2016 Small 12 3770
[23]	Zhu J Q, Wang Z C, Yu H, Li N, Zhang J, Meng J L, Liao M Z, Zhao J, Lu X B, Du L J, Yang R, Shi D X, Jiang Y, Zhang G Y 2017 J. Am. Chem. Soc. 139 10216
[24]	Xie L, Du L J, Lu X B, Yang R, Shi D X, Zhang G Y 2017 Chin. Phys. B 26 087306
[25]	Chen P, Xiang J Y, Yu H, Zhang J, Xie G B, Wu S, Lu X B, Wang G L, Zhao J, Wen F S, Liu Z Y, Yang R, Shi D X, Zhang G Y 2015 2D Materials 2 034009
[26]	Zhang J, Wang J H, Chen P, Sun Y, Wu S, Jia Z Y, Lu X B, Yu H, Chen W, Zhu J Q, Xie G B, Yang R, Shi D X, Xu X L, Xiang J Y, Liu K H, Zhang G Y 2016 Adv. Mater. 28 1950
[27]	Du L J, Yu H, Liao M Z, Wang S P, Xie L, Lu X B, Zhu J Q, Li N, Shen C, Chen P, Yang R, Shi D X, Zhang G Y 2017 Appl. Phys. Lett. 111 263106
[28]	Xie L, Liao M Z, Wang S P, Yu H, Du L J, Tang J, Zhao J, Zhang J, Chen P, Lu X B, Wang G L, Xie G B, Yang R, Shi D X, Zhang G Y 2017 Adv. Mater. 29 1702522
[29]	Zhao J, Chen W, Meng J L, Yu H, Liao M Z, Zhu J Q, Yang R, Shi D X, Zhang G Y 2016 Adv. Elec. Mater. 2 1500379
[30]	Zhao J, Li N, Yu H, Wei Z, Liao M Z, Chen P, Wang S P, Shi D X, Sun Q J, Zhang G Y 2017 Adv. Mater. 29 1702076
[31]	Desai S B, Madhvapathy S R, Sachid A B, Llinas J P, Wang Q X, Ahn G H, Pitner G, Kim M J, Bokor J, Hu C M, Wong H S P, Javey A 2016 Science 354 99
[32]	Feng J D, Graf M, Liu K, Ovchinnikov D, Dumcenco D, Heiranian M, Nandigana V, Aluru N R, Kis A, Radenovic A 2016 Nature 536 197
[33]	Sahoo P K, Memaran S, Xin Y, Balicas L, Gutirrez H R 2018 Nature 553 63
[34]	Baker M A, Gilmore R, Lenardi C, Gissler W 1999 Appl. Surf. Sci. 150 255
[35]	Yu Y F, Li C, Liu Y, Su L Q, Zhang Y, Cao L Y 2013 Sci. Rep. 3 1866
[36]	Islam N R, Kang N, Bhanu U, Paudel H P, Erementchouk M, Tetard L, Leuenberger M N, Khondaker S I 2014 Nanoscale 6 10033
[37]	Yang W, Chen G, Shi Z, Liu C C, Zhang L, Xie G, Cheng M, Wang D, Yang R, Shi D, Watanabe K, Taniguchi T, Yao Y, Zhang Y, Zhang G 2013 Nat. Mater. 12 792
[38]	Geim A K, Grigorieva I V 2013 Nature 499 419
[39]	Lee G H, Yu Y J, Cui X, Petrone N, Lee C H, Choi M S, Lee D Y, Lee C, Yoo W J, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J 2013 ACS Nano 7 7931
[40]	Conley H J, Wang B, Ziegler J I, Haglund R F, Pantelides S T, Bolotin K I 2013 Nano Lett. 13 3626
[41]	Lee Y H, Yu L L, Wang H, Fang W J, Ling X, Shi Y M, Lin C T, Huang J K, Chang M T, Chang C S, Dresselhaus M, Palacios T, Li L J, Kong J 2013 Nano Lett. 13 1852
[42]	Gurarslan A, Yu Y F, Su L Q, Yu Y L, Suarez F, Yao S, Zhu Y, Ozturk M, Zhang Y, Cao L Y 2014 ACS Nano 8 11522
[43]	Schneider G F, Calado V E, Zandbergen H, Vandersypen L M K, Dekker C 2010 Nano Lett. 10 1912
[44]	Braga S F, Coluci V R, Legoas S B, Giro R, Galvo D S, Baughman R H 2004 Nano Lett. 4 881
[45]	Chen Y, Lu J, Gao Z X 2007 J. Phys. Chem. C 111 1625
[46]	Pan H, Feng Y, Lin J 2005 Phys. Rev. B 72 085415
[47]	Lauret J S, Arenal R, Ducastelle F, Loiseau A, Cau M, Attal-Tretout B, Rosencher E, Goux-Capes L 2005 Phys. Rev. Lett. 94 037405
[48]	Guo G Y, Lin J C 2005 Phys. Rev. B 71 165402
[49]	Xiao J, Long M Q, Li X M, Xu H, Huang H, Gao Y L 2014 Sci. Rep. 4 4327
[50]	Ghorbani-Asl M, Zibouche N, Wahiduzzaman M, Oliveira A F, Kuc A, Heine T 2013 Sci. Rep. 3 2961
[51]	Chhowalla M, Shin H S, Eda G, Li L J, Loh K P, Zhang H 2013 Nat. Chem. 5 263
[52]	Duerloo K A N, Li Y, Reed E J 2014 Nat. Commun. 5 4214
[53]	Guo Y, Sun D, Ouyang B, Raja A, Song J, Heinz T F, Brus L E 2015 Nano Lett. 15 5081
[54]	Eda G, Fujita T, Yamaguchi H, Voiry D, Chen M, Chhowalla M 2012 ACS Nano 6 7311
[55]	Nayak A P, Pandey T, Voiry D, Liu J, Moran S T, Sharma A, Tan C, Chen C, Li L J, Chhowalla M U, Lin J F, Singh A K, Akinwande D 2015 Nano Lett. 15 346
[56]	Liu Q, Li X, He Q, Khalil A, Liu D, Xiang T, Wu X, Song L 2015 Small 11 5556
[57]	Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G, Wang F 2010 Nano Lett. 10 1271
[58]	Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M 2011 Nano Lett. 11 5111
[59]	Cai L, He J, Liu Q, Yao T, Chen L, Yan W, Hu F, Jiang Y, Zhao Y, Hu T, Sun Z, Wei S 2015 J. Am. Chem. Soc. 137 2622
[60]	Castellanos-Gomez A, Buscema M, Molenaar R, Singh V, Janssen L, Herre S J, van der Zant, Steele G A 2014 2D Materials 1 011002
[61]	Wang L, Meric I, Huang P, Gao Q, Gao Y, Tran H, Taniguchi T, Watanabe K, Campos L, Muller D 2013 Science 342 614
[62]	Kwak J Y, Hwang J, Calderon B, Alsalman H, Munoz N, Schutter B, Spencer M G 2014 Nano Lett. 14 4511
[63]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[64]	Xu K, Chen D X, Yang F Y, Wang Z X, Yin L, Wang F, Cheng R Q, Liu K H, Xiong J, Liu Q, He J 2017 Nano Lett. 17 1065
[65]	Lee S C, Pearson G L 1981 Solid State Electron. 24 563
[66]	Lee C, Yan H, Brus L E, Heinz T F, Hone J, Ryu S 2010 Acs Nano 4 2695
[67]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X F, Tomanek D, Ye P D D 2014 ACS Nano 8 4033
[68]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
[69]	Tran V, Soklaski R, Liang Y, Yang L 2014 Phys. Rev. B 89 235319
[70]	van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y M, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554
[71]	Jin W, Yeh P C, Zaki N, Chenet D, Arefe G, Hao Y, Sala A, Mentes T O, Dadap J I, Locatelli A, Home J, Osgood Jr R M 2015 Phys. Rev. B 92 201409
[72]	Zhu C R, Wang G, Liu B L, Marie X, Qiao X F, Zhang X, Wu X X, Fan H, Tan P H, Amand T, Urbaszek B 2013 Phys. Rev. B 88 121301
[73]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y 2014 Nat. Nanotechnol. 9 372
[74]	Buscema M, Groenendijk D J, Blanter S I, Steele G A, van der Zant H S, Castellanos-Gomez A 2014 Nano Lett. 14 3347
[75]	Na J, Lee Y T, Lim J A, Hwang D K, Kim G T, Choi W K, Song Y W 2014 ACS Nano 8 11753
[76]	Campbell P M, Tarasov A, Joiner C A, Tsai M Y, Pavlidis G, Graham S, Ready W J, Vogel E M 2016 Nanoscale 8 2268
[77]	Chuang H J, Tan X, Ghimire N J, Perera M M, Chamlagain B, Cheng M M C, Yan J, Mandrus D, Tomnek D, Zhou Z 2014 Nano Lett. 14 3594
[78]	Cao Y, Wei Z, Liu S, Gan L, Guo X, Xu W, Steigerwald M L, Liu Z, Zhu D 2010 Angew. Chem. 122 6463
[79]	Cao Y, Liu S, Shen Q, Yan K, Li P, Xu J, Yu D, Steigerwald M L, Nuckolls C, Liu Z 2009 Adv. Funct. Mater. 19 2743
[80]	Liu Y, Guo J, Wu Y C, Zhu E, Weiss N O, He Q, Wu H, Cheng H C, Xu Y, Shakir I 2016 Nano Lett. 16 6337
[81]	Liu Y, Wu H, Cheng H C, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss N O 2015 Nano Lett. 15 3030
[82]	Miao J, Zhang S, Cai L, Scherr M, Wang C 2015 ACS Nano 9 9236
[83]	Roy T, Tosun M, Kang J S, Sachid A B, Desai S B, Hettick M, Hu C M C, Javey A 2014 ACS Nano 8 6259
[84]	Salvatore G A, Munzenrieder N, Barraud C, Petti L, Zysset C, Buthe L, Ensslin K, Troster G 2013 ACS Nano 7 8809
[85]	Yoon J, Park W, Bae G Y, Kim Y, Jang H S, Hyun Y, Lim S K, Kahng Y H, Hong W K, Lee B H, Ko H C 2013 Small 9 3295
[86]	Zhao J, Wang G L, Yang R, Lu X B, Cheng M, He C L, Xie G B, Meng J L, Shi D X, Zhang G Y 2015 ACS Nano 9 1622
[87]	Powell M J 1989 IEEE Trans. Electron. Dev. 36 2753
[88]	Dimitrakopoulos C D, Malenfant P R L 2002 Adv. Mater. 14 99
[89]	Street R A 2009 Adv. Mater. 21 2007
[90]	Zhao J, He C L, Yang R, Shi Z W, Cheng M, Yang W, Xie G B, Wang D M, Shi D X, Zhang G Y 2012 Appl. Phys. Lett. 101 063112
[91]	Late D J, Liu B, Matte H S S R, Dravid V P, Rao C N R 2012 ACS Nano 6 5635
[92]	Zhang S L, Choi H H, Yue H Y, Yang W C 2014 Curr. Appl. Phys. 14 264
[93]	Late D J, HuangY K, Liu B, Acharya J, Shirodkar S N, Luo J J, Yan A M, Charles D, Waghmare U V, Dravid V P, Rao C N R 2013 ACS Nano 7 4879
[94]	Wang Y L, Cong C X, Qiu C Y, Yu T 2013 Small 9 2857
[95]	Horzum S, Sahin H, Cahangirov S, Cudazzo P, Rubio A, Serin T, Peeters F M 2013 Phys. Rev. B 87 125415
[96]	Tongay S, Zhou J, Ataca C, Liu J, Kang J S, Matthews T S, You L, Li J B, Grossman J C, Wu J Q 2013 Nano Lett. 13 2831
[97]	Varghese J O, Agbo P, Sutherland A M, Brar V W, Rossman G R, Gray H B, Heath J R 2015 Adv. Mater. 27 2734

施引文献

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[2]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
[3]	Cui X, Lee G H, Kim Y D, Arefe G, Huang P Y, Lee C H, Chenet D A, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen B S, Watanabe K, Taniguchi T, Muller D A, Low T, Kim P, Hone J 2015 Nat. Nanotechnol. 10 534
[4]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotechnol. 8 497
[5]	Pu J, Yomogida Y, Liu K K, Li L J, Iwasa Y, Takenobu T 2012 Nano Lett. 12 4013
[6]	Wang H, Yu L L, Lee Y H, Shi Y M, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[7]	Tan L K, Liu B, Teng J H, Guo S H, Low H Y, Loh K P 2014 Nanoscale 6 10584
[8]	Liu H J, Jiao L, Yang F, Cai Y, Wu X X, Ho W K, Gao C L, Jia J F, Wang N, Fan H, Yao W, Xie M H 2014 Phys. Rev. Lett. 113 066105
[9]	Serna M I, Yoo S H, Moreno S, Xi Y, Oviedo J P, Choi H, Alshareef H N, Kim M J, Minary-Jolandan M, Quevedo-Lopez M A 2016 ACS Nano 10 6054
[10]	Li H N, Li Y, Aljarb A, Shi Y M, Li L J 2017 Chem. Rev. 7b00212
[11]	Kang K, Xie S, Huang L, Han Y, Huang P Y, Mak K F, Kim C J, Muller D, Park J 2015 Nature 520 656
[12]	Lin Y C, Zhang W J, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W, Li L J 2012 Nanoscale 4 6637
[13]	Kang K, Lee K H, Han Y, Gao H, Xie S, Muller D A, Park J 2017 Nature 550 229
[14]	Das S, Chen H Y, Penumatcha A V, Appenzeller J 2013 Nano Lett. 13 100
[15]	Zheng J Y, Yan X X, Lu Z X, Qiu H L, Xu G C, Zhou X, Wang P, Pan X Q, Liu K H, Jiao L Y 2017 Adv. Mater. 29 1604540
[16]	Kappera R, Voiry D, Yalcin S E, Branch B, Gupta G, Mohite A D, Chhowalla M 2014 Nat. Mater. 13 1128
[17]	Zhang J, Yu H, Chen W, Tian X Z, Liu D H, Cheng M, Xie G B, Yang W, Yang R, Bai X D, Shi D X, Zhang G Y 2014 ACS Nano 8 6024
[18]	Chen W, Zhao J, Zhang J, Gu L, Yang Z Z, Li X M, Yu H, Zhu X T, Yang R, Shi D X, Lin X C, Guo J D, Bai X D, Zhang G Y 2015 J. Am. Chem. Soc. 137 15632
[19]	Yu H, Yang Z Z, Du L J, Zhang J, Shi J N, Chen W, Chen P, Liao M Z, Zhao J, Meng J L, Wang G L, Zhu J Q, Yang R, Shi D X, Gu L, Zhang G Y 2017 Small 13 1603005
[20]	Yu H, Liao M, Zhao W, Liu G, Zhou X J, Wei Z, Xu X, Liu K, Hu Z, Deng K, Zhou S, Shi J A, Gu L, Shen C, Zhang T, Du L, Xie L, Zhu J, Chen W, Yang R, Shi D, Zhang G 2017 ACS Nano 11 12001
[21]	Zhao J, Yu H, Chen W, Yang R, Zhu J Q, Liao M Z, Shi D X, Zhang G Y 2016 ACS Appl. Mater. Interfaces 8 16546
[22]	Meng J L, Wang G L, Li X M, Lu X B, Zhang J, Yu H, Chen W, Du L J, Liao M Z, Zhao J, Chen P, Zhu J Q, Bai X D, Shi D X, Zhang G Y 2016 Small 12 3770
[23]	Zhu J Q, Wang Z C, Yu H, Li N, Zhang J, Meng J L, Liao M Z, Zhao J, Lu X B, Du L J, Yang R, Shi D X, Jiang Y, Zhang G Y 2017 J. Am. Chem. Soc. 139 10216
[24]	Xie L, Du L J, Lu X B, Yang R, Shi D X, Zhang G Y 2017 Chin. Phys. B 26 087306
[25]	Chen P, Xiang J Y, Yu H, Zhang J, Xie G B, Wu S, Lu X B, Wang G L, Zhao J, Wen F S, Liu Z Y, Yang R, Shi D X, Zhang G Y 2015 2D Materials 2 034009
[26]	Zhang J, Wang J H, Chen P, Sun Y, Wu S, Jia Z Y, Lu X B, Yu H, Chen W, Zhu J Q, Xie G B, Yang R, Shi D X, Xu X L, Xiang J Y, Liu K H, Zhang G Y 2016 Adv. Mater. 28 1950
[27]	Du L J, Yu H, Liao M Z, Wang S P, Xie L, Lu X B, Zhu J Q, Li N, Shen C, Chen P, Yang R, Shi D X, Zhang G Y 2017 Appl. Phys. Lett. 111 263106
[28]	Xie L, Liao M Z, Wang S P, Yu H, Du L J, Tang J, Zhao J, Zhang J, Chen P, Lu X B, Wang G L, Xie G B, Yang R, Shi D X, Zhang G Y 2017 Adv. Mater. 29 1702522
[29]	Zhao J, Chen W, Meng J L, Yu H, Liao M Z, Zhu J Q, Yang R, Shi D X, Zhang G Y 2016 Adv. Elec. Mater. 2 1500379
[30]	Zhao J, Li N, Yu H, Wei Z, Liao M Z, Chen P, Wang S P, Shi D X, Sun Q J, Zhang G Y 2017 Adv. Mater. 29 1702076
[31]	Desai S B, Madhvapathy S R, Sachid A B, Llinas J P, Wang Q X, Ahn G H, Pitner G, Kim M J, Bokor J, Hu C M, Wong H S P, Javey A 2016 Science 354 99
[32]	Feng J D, Graf M, Liu K, Ovchinnikov D, Dumcenco D, Heiranian M, Nandigana V, Aluru N R, Kis A, Radenovic A 2016 Nature 536 197
[33]	Sahoo P K, Memaran S, Xin Y, Balicas L, Gutirrez H R 2018 Nature 553 63
[34]	Baker M A, Gilmore R, Lenardi C, Gissler W 1999 Appl. Surf. Sci. 150 255
[35]	Yu Y F, Li C, Liu Y, Su L Q, Zhang Y, Cao L Y 2013 Sci. Rep. 3 1866
[36]	Islam N R, Kang N, Bhanu U, Paudel H P, Erementchouk M, Tetard L, Leuenberger M N, Khondaker S I 2014 Nanoscale 6 10033
[37]	Yang W, Chen G, Shi Z, Liu C C, Zhang L, Xie G, Cheng M, Wang D, Yang R, Shi D, Watanabe K, Taniguchi T, Yao Y, Zhang Y, Zhang G 2013 Nat. Mater. 12 792
[38]	Geim A K, Grigorieva I V 2013 Nature 499 419
[39]	Lee G H, Yu Y J, Cui X, Petrone N, Lee C H, Choi M S, Lee D Y, Lee C, Yoo W J, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J 2013 ACS Nano 7 7931
[40]	Conley H J, Wang B, Ziegler J I, Haglund R F, Pantelides S T, Bolotin K I 2013 Nano Lett. 13 3626
[41]	Lee Y H, Yu L L, Wang H, Fang W J, Ling X, Shi Y M, Lin C T, Huang J K, Chang M T, Chang C S, Dresselhaus M, Palacios T, Li L J, Kong J 2013 Nano Lett. 13 1852
[42]	Gurarslan A, Yu Y F, Su L Q, Yu Y L, Suarez F, Yao S, Zhu Y, Ozturk M, Zhang Y, Cao L Y 2014 ACS Nano 8 11522
[43]	Schneider G F, Calado V E, Zandbergen H, Vandersypen L M K, Dekker C 2010 Nano Lett. 10 1912
[44]	Braga S F, Coluci V R, Legoas S B, Giro R, Galvo D S, Baughman R H 2004 Nano Lett. 4 881
[45]	Chen Y, Lu J, Gao Z X 2007 J. Phys. Chem. C 111 1625
[46]	Pan H, Feng Y, Lin J 2005 Phys. Rev. B 72 085415
[47]	Lauret J S, Arenal R, Ducastelle F, Loiseau A, Cau M, Attal-Tretout B, Rosencher E, Goux-Capes L 2005 Phys. Rev. Lett. 94 037405
[48]	Guo G Y, Lin J C 2005 Phys. Rev. B 71 165402
[49]	Xiao J, Long M Q, Li X M, Xu H, Huang H, Gao Y L 2014 Sci. Rep. 4 4327
[50]	Ghorbani-Asl M, Zibouche N, Wahiduzzaman M, Oliveira A F, Kuc A, Heine T 2013 Sci. Rep. 3 2961
[51]	Chhowalla M, Shin H S, Eda G, Li L J, Loh K P, Zhang H 2013 Nat. Chem. 5 263
[52]	Duerloo K A N, Li Y, Reed E J 2014 Nat. Commun. 5 4214
[53]	Guo Y, Sun D, Ouyang B, Raja A, Song J, Heinz T F, Brus L E 2015 Nano Lett. 15 5081
[54]	Eda G, Fujita T, Yamaguchi H, Voiry D, Chen M, Chhowalla M 2012 ACS Nano 6 7311
[55]	Nayak A P, Pandey T, Voiry D, Liu J, Moran S T, Sharma A, Tan C, Chen C, Li L J, Chhowalla M U, Lin J F, Singh A K, Akinwande D 2015 Nano Lett. 15 346
[56]	Liu Q, Li X, He Q, Khalil A, Liu D, Xiang T, Wu X, Song L 2015 Small 11 5556
[57]	Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G, Wang F 2010 Nano Lett. 10 1271
[58]	Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M 2011 Nano Lett. 11 5111
[59]	Cai L, He J, Liu Q, Yao T, Chen L, Yan W, Hu F, Jiang Y, Zhao Y, Hu T, Sun Z, Wei S 2015 J. Am. Chem. Soc. 137 2622
[60]	Castellanos-Gomez A, Buscema M, Molenaar R, Singh V, Janssen L, Herre S J, van der Zant, Steele G A 2014 2D Materials 1 011002
[61]	Wang L, Meric I, Huang P, Gao Q, Gao Y, Tran H, Taniguchi T, Watanabe K, Campos L, Muller D 2013 Science 342 614
[62]	Kwak J Y, Hwang J, Calderon B, Alsalman H, Munoz N, Schutter B, Spencer M G 2014 Nano Lett. 14 4511
[63]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[64]	Xu K, Chen D X, Yang F Y, Wang Z X, Yin L, Wang F, Cheng R Q, Liu K H, Xiong J, Liu Q, He J 2017 Nano Lett. 17 1065
[65]	Lee S C, Pearson G L 1981 Solid State Electron. 24 563
[66]	Lee C, Yan H, Brus L E, Heinz T F, Hone J, Ryu S 2010 Acs Nano 4 2695
[67]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X F, Tomanek D, Ye P D D 2014 ACS Nano 8 4033
[68]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
[69]	Tran V, Soklaski R, Liang Y, Yang L 2014 Phys. Rev. B 89 235319
[70]	van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y M, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554
[71]	Jin W, Yeh P C, Zaki N, Chenet D, Arefe G, Hao Y, Sala A, Mentes T O, Dadap J I, Locatelli A, Home J, Osgood Jr R M 2015 Phys. Rev. B 92 201409
[72]	Zhu C R, Wang G, Liu B L, Marie X, Qiao X F, Zhang X, Wu X X, Fan H, Tan P H, Amand T, Urbaszek B 2013 Phys. Rev. B 88 121301
[73]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y 2014 Nat. Nanotechnol. 9 372
[74]	Buscema M, Groenendijk D J, Blanter S I, Steele G A, van der Zant H S, Castellanos-Gomez A 2014 Nano Lett. 14 3347
[75]	Na J, Lee Y T, Lim J A, Hwang D K, Kim G T, Choi W K, Song Y W 2014 ACS Nano 8 11753
[76]	Campbell P M, Tarasov A, Joiner C A, Tsai M Y, Pavlidis G, Graham S, Ready W J, Vogel E M 2016 Nanoscale 8 2268
[77]	Chuang H J, Tan X, Ghimire N J, Perera M M, Chamlagain B, Cheng M M C, Yan J, Mandrus D, Tomnek D, Zhou Z 2014 Nano Lett. 14 3594
[78]	Cao Y, Wei Z, Liu S, Gan L, Guo X, Xu W, Steigerwald M L, Liu Z, Zhu D 2010 Angew. Chem. 122 6463
[79]	Cao Y, Liu S, Shen Q, Yan K, Li P, Xu J, Yu D, Steigerwald M L, Nuckolls C, Liu Z 2009 Adv. Funct. Mater. 19 2743
[80]	Liu Y, Guo J, Wu Y C, Zhu E, Weiss N O, He Q, Wu H, Cheng H C, Xu Y, Shakir I 2016 Nano Lett. 16 6337
[81]	Liu Y, Wu H, Cheng H C, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss N O 2015 Nano Lett. 15 3030
[82]	Miao J, Zhang S, Cai L, Scherr M, Wang C 2015 ACS Nano 9 9236
[83]	Roy T, Tosun M, Kang J S, Sachid A B, Desai S B, Hettick M, Hu C M C, Javey A 2014 ACS Nano 8 6259
[84]	Salvatore G A, Munzenrieder N, Barraud C, Petti L, Zysset C, Buthe L, Ensslin K, Troster G 2013 ACS Nano 7 8809
[85]	Yoon J, Park W, Bae G Y, Kim Y, Jang H S, Hyun Y, Lim S K, Kahng Y H, Hong W K, Lee B H, Ko H C 2013 Small 9 3295
[86]	Zhao J, Wang G L, Yang R, Lu X B, Cheng M, He C L, Xie G B, Meng J L, Shi D X, Zhang G Y 2015 ACS Nano 9 1622
[87]	Powell M J 1989 IEEE Trans. Electron. Dev. 36 2753
[88]	Dimitrakopoulos C D, Malenfant P R L 2002 Adv. Mater. 14 99
[89]	Street R A 2009 Adv. Mater. 21 2007
[90]	Zhao J, He C L, Yang R, Shi Z W, Cheng M, Yang W, Xie G B, Wang D M, Shi D X, Zhang G Y 2012 Appl. Phys. Lett. 101 063112
[91]	Late D J, Liu B, Matte H S S R, Dravid V P, Rao C N R 2012 ACS Nano 6 5635
[92]	Zhang S L, Choi H H, Yue H Y, Yang W C 2014 Curr. Appl. Phys. 14 264
[93]	Late D J, HuangY K, Liu B, Acharya J, Shirodkar S N, Luo J J, Yan A M, Charles D, Waghmare U V, Dravid V P, Rao C N R 2013 ACS Nano 7 4879
[94]	Wang Y L, Cong C X, Qiu C Y, Yu T 2013 Small 9 2857
[95]	Horzum S, Sahin H, Cahangirov S, Cudazzo P, Rubio A, Serin T, Peeters F M 2013 Phys. Rev. B 87 125415
[96]	Tongay S, Zhou J, Ataca C, Liu J, Kang J S, Matthews T S, You L, Li J B, Grossman J C, Wu J Q 2013 Nano Lett. 13 2831
[97]	Varghese J O, Agbo P, Sutherland A M, Brar V W, Rossman G R, Gray H B, Heath J R 2015 Adv. Mater. 27 2734

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