AlN插入层对AlxGa1-xN/GaN界面电子散射的影响

杨鹏; 吕燕伍; 王鑫波

doi:10.7498/aps.64.197303

摘要

本文研究AlN作为AlxGa1-xN/GaN插入层引起的电子输运性质的变化, 考虑了AlxGa1-xN和AlN势垒层的自发极化、压电极化对AlxGa1-xN/AlN/GaN双异质结高电子迁移率晶体管(HEMT)中极化电荷面密度、二维电子气(2DEG) 浓度的影响, 分析了AlN厚度与界面粗糙度散射和合金无序散射的关系; 结果表明, 2DEG 浓度、界面粗糙度散射和合金无序散射依赖于AlN层厚度, 插入一层13 nm薄的AlN层, 可以明显提高电子迁移率.

关键词:

Abstract

This paper investigates the changes of electron transport properties in AlxGa1-xN/GaN with an inserted AlN layer. The polarization charge density and two-dimensional electron gas (2DEG) sheet density in AlxGa1-xN/AlN/GaN double heterojunction high electron mobility transistors (HEMT) affected by the spontaneous polarization and piezoelectric polarization in AlxGa1-xN and AlN barrier are studied. Relations of interface roughness scattering and alloy disorder scattering with the AlN thickness are systematically analyzed. It is found that the alloy disorder scattering is the main scattering mechanism in AlxGa1-xN/GaN heterojunction high-electron-mobility transistors, while the interface roughness scattering is the main scattering mechanism in AlxGa1-xN/AlN/GaN double-heterojunction structure. It is also known that the 2DEG sheet density, interface roughness scattering and alloy disorder scattering are depended on the thickness of the inserted AlN layer. The 2DEG sheet density increases slightly and the mobility increases obviously by inserting an AlN layer about 13 nm. Taking Al mole fraction of 0.3 as an example, if without AlN layer, the 2DEG sheet density is 1.47 1013 cm-2 with the mobility limited by the interface roughness scattering of 1.15 104 cm2V-1-1, and the mobility limited by alloy disorder scattering of 6.07 102cm2V-1-1. After inserting an AlN layer of 1 nm, the 2DEG sheet density increases to 1.66 1013cm-2, and the mobility limited by the interface roughness scattering reduces to 7.88 103cm2V-1-1 while the mobility limited by alloy disorder scattering increases greatly up to 1.42 108 cm2V-1-1.

Keywords:

作者及机构信息

1.
北京交通大学理学院, 北京 100044

通信作者: 吕燕伍, ywlu@bjtu.edu.cn

基金项目: 国家自然科学基金(批准号: 60976070) 资助的课题.

Authors and contacts

1.
School of Science, Beijing Jiaotong University, Beijing 100044, China

Corresponding author: Lü Yan-Wu, ywlu@bjtu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60976070).

参考文献

[1]	zgr A, Kim W, Fan Z, Botchkarev A, Salvador A, Mohammed S N, Sverdlov B, Morkoc H 1995 Electron. Lett. 31 1389
[2]	Khan M A, Chen Q, Shur M S, Dermott B T, Higgins J A, Burm J, Schaff W, Eastman L F 1996 IEEE Electron Device Lett. 17 584
[3]	Binari S C, Redwing J M, Kelner G, Kruppa W 1997 Electron. Lett. 33 242
[4]	Ando T, Fowler A B, Stern F 1982 Rev. Mod. Phys. 54 437
[5]	Cao Y, Xing H, Jena D 2010 Appl. Phys. Lett. 97 222116
[6]	Masselink T, W 1991 Phys. Rev. Lett. 66 1513
[7]	Hsu L, Walukiewicz W 1997 Phys. Rev. B 56 1520
[8]	Wu M, Zheng D Y, Wang Y, Chen W W, Zhang K, Ma X H, Zhang J C, Hao Y 2014 Chin. Phys. B 23 097307
[9]	Tang C, Xie G, Zhang L, Guo Q, Wang T, Sheng K 2013 Chin. Phys. B 22 0106107
[10]	Ji D, Liu B, L Y W, Zou M, Fan B L 2012 Chin. Phys. B 21 067201
[11]	Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302(in Chinese) [段宝兴, 杨银堂 2014 63 057302]
[12]	Zhu Y X, Cao W W, Xu C, Deng Y, Zou D S 2014 Acta Phys. Sin. 63 117302(in Chinese) [朱彦旭, 曹伟伟, 徐晨, 邓叶, 邹德恕 2014 63 117302]
[13]	Yan J D, Wang X L, Wang Q, Qu S, Xiao H L, Peng E C, Kang H, Wang C M, Feng C, Yin H B, Jiang L J, Li B Q, Wang Z G, Hou X 2014 J. Appl. Phys. 116 054502
[14]	Smorchkova I P, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars S P, Speck J S, Mishra U K 2001 J. Appl. Phys. 90 5196
[15]	Kim T W, Choo D C, Yoo K H, Jung M H, Cho Y H, Jae-Lee H, Jung-Lee H 2005 J. Appl. Phys. 97 103721
[16]	Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, L L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013(in Chinese) [周忠堂, 郭丽伟, 邢志刚, 丁国建, 谭长林, 吕力, 刘建, 刘新宇, 贾海强, 陈弘, 周均铭 2007 56 6013]
[17]	Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa, Kei-Ichiro Asai, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda 2005 J. Appl. Phys. 98 063713
[18]	Yu Y X, Lin Z J, Luan C B, L Y J, Feng Z H, Yang M, Wang Y, Chen H 2013 AIP Adv. 3 092115
[19]	Luan C B, Lin Z J, L Y J, Zhao J T, Wang Y, Chen H, Wang Z G 2014 J. Appl. Phys. 116 044507
[20]	Hu W D, Chen X S, Yin F, Zhang J B, Luc W 2009 J. Appl. Phys. 105 084502
[21]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[22]	Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE Trans. Electron Devices 59 1393
[23]	Zhang Y M, Feng S W, Zhu H, Zhang G C, Deng B, Ma L 2013 J. Appl. Phys. 114 094516
[24]	Zhang Y M, Feng S W, Zhu H, Zhang J, Deng B 2013 Microelectron. Reliab. 53 694
[25]	Nitin Goyal, Benjamin Iiguez, Tor A. Fjeldly 2012 Appl. Phys. Lett. 101 103505
[26]	Ferry D K, Goodnick S M, Bird J 2009 Transport in Nanostructures (2nd Ed.) (Cambridge: Cambridge University Press) p95
[27]	Liu B, Lu Y W, Jin G R, Zhao Y, Wang X L, Zhu Q S, Wang Z G 2010 Appl. Phys. Lett. 97 262111
[28]	Enrico Bellotti, Francesco Bertazzi, Michele Goano 2007 J. Appl. Phys. 101 123706

施引文献

[1]	zgr A, Kim W, Fan Z, Botchkarev A, Salvador A, Mohammed S N, Sverdlov B, Morkoc H 1995 Electron. Lett. 31 1389
[2]	Khan M A, Chen Q, Shur M S, Dermott B T, Higgins J A, Burm J, Schaff W, Eastman L F 1996 IEEE Electron Device Lett. 17 584
[3]	Binari S C, Redwing J M, Kelner G, Kruppa W 1997 Electron. Lett. 33 242
[4]	Ando T, Fowler A B, Stern F 1982 Rev. Mod. Phys. 54 437
[5]	Cao Y, Xing H, Jena D 2010 Appl. Phys. Lett. 97 222116
[6]	Masselink T, W 1991 Phys. Rev. Lett. 66 1513
[7]	Hsu L, Walukiewicz W 1997 Phys. Rev. B 56 1520
[8]	Wu M, Zheng D Y, Wang Y, Chen W W, Zhang K, Ma X H, Zhang J C, Hao Y 2014 Chin. Phys. B 23 097307
[9]	Tang C, Xie G, Zhang L, Guo Q, Wang T, Sheng K 2013 Chin. Phys. B 22 0106107
[10]	Ji D, Liu B, L Y W, Zou M, Fan B L 2012 Chin. Phys. B 21 067201
[11]	Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302(in Chinese) [段宝兴, 杨银堂 2014 63 057302]
[12]	Zhu Y X, Cao W W, Xu C, Deng Y, Zou D S 2014 Acta Phys. Sin. 63 117302(in Chinese) [朱彦旭, 曹伟伟, 徐晨, 邓叶, 邹德恕 2014 63 117302]
[13]	Yan J D, Wang X L, Wang Q, Qu S, Xiao H L, Peng E C, Kang H, Wang C M, Feng C, Yin H B, Jiang L J, Li B Q, Wang Z G, Hou X 2014 J. Appl. Phys. 116 054502
[14]	Smorchkova I P, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars S P, Speck J S, Mishra U K 2001 J. Appl. Phys. 90 5196
[15]	Kim T W, Choo D C, Yoo K H, Jung M H, Cho Y H, Jae-Lee H, Jung-Lee H 2005 J. Appl. Phys. 97 103721
[16]	Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, L L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013(in Chinese) [周忠堂, 郭丽伟, 邢志刚, 丁国建, 谭长林, 吕力, 刘建, 刘新宇, 贾海强, 陈弘, 周均铭 2007 56 6013]
[17]	Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa, Kei-Ichiro Asai, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda 2005 J. Appl. Phys. 98 063713
[18]	Yu Y X, Lin Z J, Luan C B, L Y J, Feng Z H, Yang M, Wang Y, Chen H 2013 AIP Adv. 3 092115
[19]	Luan C B, Lin Z J, L Y J, Zhao J T, Wang Y, Chen H, Wang Z G 2014 J. Appl. Phys. 116 044507
[20]	Hu W D, Chen X S, Yin F, Zhang J B, Luc W 2009 J. Appl. Phys. 105 084502
[21]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[22]	Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE Trans. Electron Devices 59 1393
[23]	Zhang Y M, Feng S W, Zhu H, Zhang G C, Deng B, Ma L 2013 J. Appl. Phys. 114 094516
[24]	Zhang Y M, Feng S W, Zhu H, Zhang J, Deng B 2013 Microelectron. Reliab. 53 694
[25]	Nitin Goyal, Benjamin Iiguez, Tor A. Fjeldly 2012 Appl. Phys. Lett. 101 103505
[26]	Ferry D K, Goodnick S M, Bird J 2009 Transport in Nanostructures (2nd Ed.) (Cambridge: Cambridge University Press) p95
[27]	Liu B, Lu Y W, Jin G R, Zhao Y, Wang X L, Zhu Q S, Wang Z G 2010 Appl. Phys. Lett. 97 262111
[28]	Enrico Bellotti, Francesco Bertazzi, Michele Goano 2007 J. Appl. Phys. 101 123706

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