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利用射频磁控溅射法制备了铝掺杂氧化锌（AZO）透明导电薄膜，在传统的磁控溅射系统中引入外加磁场，研究了外加磁场对AZO薄膜沉积速率、形貌结构及光电特性的影响. 研究结果表明，外加磁场后薄膜的沉积速率从不加磁场的13.04 nm/min提高到了19.93 nm/min；外加磁场后薄膜表面平整致密、颗粒大小均匀，结晶质量较高，而不加磁场薄膜表面形貌呈蠕虫状，薄膜质量较差. 溅射时间为90 min时，外加磁场前后AZO薄膜方阻分别为30.74 Ω /□ 和12.88 Ω /□. 外加磁场对薄膜可见光透过率影响不大，但使薄膜的吸收边蓝移现象更明显. 运用ansys软件对磁控溅射二维磁场分布模拟后发现，外加磁场提高了靶上方横向磁场强度，改善了磁场分布的均匀性，加强了磁场对电子的磁控作用，提高了靶电流，是AZO薄膜的溅射速率、光电性能和形貌结构得到提高和优化的原因.Al-doped ZnO (AZO) transparent conductive oxide films were prepared by RF magnetic sputtering. An external magnetic field was applied to the traditional magnetron sputtering system. The influence of the external magnetic field on the crystalline structure, surface topography and photoelectric properties of the AZO transparent conductive film have been studied. XRD diffraction patterns show that under the same processing condition, the intensity of (002) diffraction peak is significantly increased with the external magnetic field, suggesting a higher degree of c-axis preferred orientation. Scanning electron microscope shows that the external magnetic field can enlarge the grain size and density of films; the surface topography of the AZO films deposited without an external magnetic field is wormlike. Deposition rate and square resistance test results show that in an external magnetic field, the deposition rate will increase from 13.04 nm/min to 19.93 nm/min, and the sheet resistance reduce to 12.88 Ω /□ from 30.74 Ω /□ at a sputtering time of 90 min. Optical transmittance spectra shows that the average transmittance of all the films in visible light spectrum is over 85% when the sputtering time is not more than 60 min, while the external magnetic field has little effect on the transmittance of the films, but making a larger blue shift of the absorption edge. Ansys software is used to simulate the two-dimensional magnetic field distribution above the target. Results show that the intensity of the horizontal magnetic field and the uniformity of it are improved by the external magnetic field, the secondary electrons near the target are tightly bound, leading to a much larger target current intensity. So the deposition rate, surface topography and photoelectric properties of the AZO films are improved.
[1] Wang Y F, Huang Q, Song Q G, Liu Y, Wei C C, Zhao Y, Zhang X D 2012 Acta Phys. Sin. 61 137801 (in Chinese)[王彦峰, 黄茜, 宋庆功, 刘阳, 魏长春, 赵颖, 张晓丹 2012 61 137801]
[2] Han X, Xia H, Wu L J 1998 Elactronic Components and Materials 17 31 (in Chinese) [韩雪, 夏慧, 吴丽君 1998 电子元件与材料 17 31]
[3] Fang Z B, Tan Y S, Liu X Q, Yang Y H, Wang Y Y 2004 Chin. Phys. 13 1330
[4] Liu X D, Liu J, Chen S, Li Z Q 2012 Appl. Surf. Sci. 263 486
[5] Wang F, Wu M Z, Wang Y Y, Yu Y M, Wu X M, Zhuge L J 2013 Vacuum 89 127
[6] Zhou B Z, Zhang H Y, Han L W, Han J C 2013 Superlattices Microst. 64 563
[7] Chen C, Ji Y, Gao X Y, Zhao M K, Ma J M, Zhang Z Y, Lu J X 2012 Acta Phys. Sin. 61 036104 (in Chinese)[陈超, 冀勇, 郜小勇, 赵孟珂, 马姣民, 张增院, 卢景霄 2012 61 036104]
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[10] Chen Z Q, Liu M H, Liu Y P, Chen W, Luo Z Q, Hu X W 2009 Acta Phys. Sin. 58 4260 (in Chinese)[陈兆权, 刘明海, 刘玉苹, 陈伟, 罗志清, 胡希伟 2009 58 4260]
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[17] Burstein E 1954 Phys. Rev. 93 632
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[19] Kim H, Piquéb A, Horwitz J S, Murata H, Kafafi Z H, Gilmore C M, Chrisey D B 2000 Thin Solid Films 377-378 798
[20] Wang Y F, Zhang X D, Huang Q, Yang F, Meng X D, Song Q G, Zhan Y 2013 Acta Phys. Sin. 62 247802 (in Chinese)[王延峰, 张晓丹, 黄茜, 杨富, 孟旭东, 宋庆功, 赵颖 2013 62 247802]
[21] Moss T S 1954 Proc. Phys. Soc. London. Sect. B 67 775
[22] Gao F Y, Li G, Xia Y 2010 Transactions of Materials and Heat Treatment 31 153 (in Chinese) [高方圆, 李光, 夏原 2010 材料热处理学报 31 153]
[23] Shen X Q, Xie Q, Xiao Q Q, Chen Q, Feng Y 2012 Acta Phys. Sin. 61 165101 (in Chinese) [沈向前, 谢泉, 肖清泉, 陈茜, 丰云 2012 61 165101]
[24] Zhao Z, Zhou Y W, Liu Y 2010 Chinese Journal of Vacuum Science and Technology 30 265 (in Chinese) [赵卓, 周艳文, 刘悦 2010 真空科学与技术学报 30 265]
[25] Zhao X M, Di G Q 2004 Acta Phys. Sin. 53 306 (in Chinese) [赵新民, 狄国庆 2004 53 306]
[26] Qiu Q Q, Li Q F, Su J J, Jiao Y, Finley Jim 2008 Vacuum 82 657
[27] Kiyoshi Kuwahara, Hiroshi Fujiyama 1994 IEEE T Plasma Sci 22 442
[28] Li S Y, Fu E G, Zhang D M, Zhang G 2005 Materials Science and Technology 13 643 (in Chinese) [李士元, 付恩刚, 庄大明, 张弓 2005 材料科学与工艺 13 643]
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[1] Wang Y F, Huang Q, Song Q G, Liu Y, Wei C C, Zhao Y, Zhang X D 2012 Acta Phys. Sin. 61 137801 (in Chinese)[王彦峰, 黄茜, 宋庆功, 刘阳, 魏长春, 赵颖, 张晓丹 2012 61 137801]
[2] Han X, Xia H, Wu L J 1998 Elactronic Components and Materials 17 31 (in Chinese) [韩雪, 夏慧, 吴丽君 1998 电子元件与材料 17 31]
[3] Fang Z B, Tan Y S, Liu X Q, Yang Y H, Wang Y Y 2004 Chin. Phys. 13 1330
[4] Liu X D, Liu J, Chen S, Li Z Q 2012 Appl. Surf. Sci. 263 486
[5] Wang F, Wu M Z, Wang Y Y, Yu Y M, Wu X M, Zhuge L J 2013 Vacuum 89 127
[6] Zhou B Z, Zhang H Y, Han L W, Han J C 2013 Superlattices Microst. 64 563
[7] Chen C, Ji Y, Gao X Y, Zhao M K, Ma J M, Zhang Z Y, Lu J X 2012 Acta Phys. Sin. 61 036104 (in Chinese)[陈超, 冀勇, 郜小勇, 赵孟珂, 马姣民, 张增院, 卢景霄 2012 61 036104]
[8] Han J, Zhang P, Gong H B, Yang X M, Qiu Z W, Zi M, Cao B Q 2013 Acta Phys. Sin. 62 216102 [韩军, 张鹏, 巩海波, 杨晓朋, 邱智文, 自敏, 曹丙强 2013 62 216102]
[9] Schuler T, Aegerter M A 1998 Thin Solid Films 351 125
[10] Chen Z Q, Liu M H, Liu Y P, Chen W, Luo Z Q, Hu X W 2009 Acta Phys. Sin. 58 4260 (in Chinese)[陈兆权, 刘明海, 刘玉苹, 陈伟, 罗志清, 胡希伟 2009 58 4260]
[11] Liang S, Mei Z X, Du X L 2012 Chin. Phys. B 21 067306
[12] Li Y Q 1992 Vacuum Coating Technology and Equipment (Shenyang: Northeast Institute of Technology Press) p107 (in Chinese) [李云奇 1992 真空镀膜技术与设备(沈阳: 东北工学院出版社) 第107页]
[13] Hiroshi Ikuta, Kohei Yokouchi, Isao Ohta, Yousuke Yanagi, Yoshitaka Itoh 2009 Vacuum 83 475
[14] Wang F C 2005 Material Modern Analytical Test Methods (Beijing: Beijing Institute of Technology Press) p93 (in Chinese) [王富耻 2005 材料现代测试分析该方法(北京: 北京理工大学出版社) 第93页]
[15] Qiu Q Q, Li Q F, Su J J, Jiao Y, Finley Jim 2009 Chinese Journal of Vacuum Science and Technology 29 46 (in Chinese) [邱清泉, 励庆孚, 苏静静, Jiao Yu, Finley Jim 2009 真空科学与技术学报 29 46]
[16] Tian M B 2006 Thin Film Technology and Materials (Beijing: Tsinghua University Press) pp 219–220 (in Chinese) [田民波 2006 薄膜技术与薄膜材料(北京: 清华大学出版社) 第219–220页]
[17] Burstein E 1954 Phys. Rev. 93 632
[18] Tauc J, Grigorovici R, Vancu A 1966 Phys. Status Solidi B 15 627
[19] Kim H, Piquéb A, Horwitz J S, Murata H, Kafafi Z H, Gilmore C M, Chrisey D B 2000 Thin Solid Films 377-378 798
[20] Wang Y F, Zhang X D, Huang Q, Yang F, Meng X D, Song Q G, Zhan Y 2013 Acta Phys. Sin. 62 247802 (in Chinese)[王延峰, 张晓丹, 黄茜, 杨富, 孟旭东, 宋庆功, 赵颖 2013 62 247802]
[21] Moss T S 1954 Proc. Phys. Soc. London. Sect. B 67 775
[22] Gao F Y, Li G, Xia Y 2010 Transactions of Materials and Heat Treatment 31 153 (in Chinese) [高方圆, 李光, 夏原 2010 材料热处理学报 31 153]
[23] Shen X Q, Xie Q, Xiao Q Q, Chen Q, Feng Y 2012 Acta Phys. Sin. 61 165101 (in Chinese) [沈向前, 谢泉, 肖清泉, 陈茜, 丰云 2012 61 165101]
[24] Zhao Z, Zhou Y W, Liu Y 2010 Chinese Journal of Vacuum Science and Technology 30 265 (in Chinese) [赵卓, 周艳文, 刘悦 2010 真空科学与技术学报 30 265]
[25] Zhao X M, Di G Q 2004 Acta Phys. Sin. 53 306 (in Chinese) [赵新民, 狄国庆 2004 53 306]
[26] Qiu Q Q, Li Q F, Su J J, Jiao Y, Finley Jim 2008 Vacuum 82 657
[27] Kiyoshi Kuwahara, Hiroshi Fujiyama 1994 IEEE T Plasma Sci 22 442
[28] Li S Y, Fu E G, Zhang D M, Zhang G 2005 Materials Science and Technology 13 643 (in Chinese) [李士元, 付恩刚, 庄大明, 张弓 2005 材料科学与工艺 13 643]
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