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采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%（Bi1/2Na1/2）TiO3（BBNT8）高温无铅正温度系数电阻（positive temperature coefficient resistivity，PTCR）陶瓷. 利用透射电镜观察材料的显微结构，发现陶瓷的显微结构主要包括晶粒和晶界两部分，观察不到明显的壳层结构. 进一步利用交流阻抗谱研究了陶瓷的宏观电学性能，发现陶瓷的总电阻是晶粒和晶界两部分的贡献，而晶粒电阻很小，在居里温度以上变化不大，材料的PTCR效应主要是晶界部分的贡献. 当温度高于居里温度时，随着温度的升高，晶界介电常数逐渐减小，导致势垒增加，晶界电阻增大，从而产生正温度系数效应. 最后，通过测试材料的介电频谱特性，研究计算了陶瓷的室温电阻率.
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关键词:
- 无铅 /
- BaTiO3-(Bi1/2Na1/2)TiO3 /
- 正温度系数电阻 /
- 阻抗
92 mol%BaTiO3-8 mol% (Bi1/2Na1/2)TiO3 (BBNT8) lead-free positive temperature coefficient resistivity (PTCR) ceramics doped with Y2O3 are prepared by the solid state reaction method. The microstructure of the sample is observed by transmission electron microscope. Results show that the microstructure of the sample mainly consists of grain and grain boundary, and no obvious shell structure is found. The electrical properties of the sample are further analyzed using the impedance spectroscopy. It is found that the total resistance of BBNT8 is composed of the resistances of grain and grain boundary. The resistance of grain is low and slightly changes with temperature when the temperature is above the Curie temperature. The PTCR effect of the material is mainly dominated by the grain boundary resistance. As the temperature increases up to above the Curie temperature, the grain boundary permittivity decreases, leading to the increase of the potential barrier height and the resistivity of the grain boundary. As a result, the distinct PTCR effect takes place. Finally, the room-temperature resistivity of the BBNT8 is studied by measuring the permittivity-frequency characteristics.-
Keywords:
- lead-free /
- BaTiO3-(Bi1/2Na1/2)TiO3 /
- positive temperature coefficient resistivity /
- impedance
[1] Hayman P W, Dam R W 1955 German Patent 929350 [1955-06-23]
[2] Wang S H, Hwang F S, Tseng T Y 1990 J. Am. Ceram. Soc. 73 2767
[3] Kuwabara M, Suemura S, Kawahara M 1985 Am. Ceram. Soc. Bull. 64 1394
[4] Smolensky G A, Isupov V A, Agranovskaya A I, Krainik N N 1961 Sov. Phys. Solid State 2 2651
[5] Huo W R, Qu Y F 2006 Sens. Actuators A 128 265
[6] Takeda H, Shimada T, Katsuyama Y, Shiosaki T 2009 J. Electroceram. 22 263
[7] Takeda H, Aoto W, Shiosaki T 2005 Appl. Phys. Lett. 87 102104
[8] Leng S L, Li G R, Zheng L Y, Shi W, Zhu Y 2013 J. Mater. Sci.: Mater. Electron. 24 431
[9] Hirose N, West A R 1996 J. Am Ceram. Soc. 79 1633
[10] Sinclair D C, West A R 1989 J. Appl. Phys. 66 3850
[11] Yuan C L, Liu X Y, Huang J Y, Zhou C R, Xu J W 2011 Acta Phys. Sin. 60 025201 (in Chinese) [袁昌来, 刘心宇, 黄静月, 周昌荣, 许积文 2011 60 025201]
[12] Yuan C L, Liu X Y, Yang Yun, Xu J W, Gu Y 2010 Acta Phys. Sin. 59 7396 (in Chinese) [袁昌来, 刘心宇, 杨云, 许积文, 谷岩 2010 59 7396]
[13] Sinclair D C, West A R 1994 J. Mater. Sci. 29 6061
[14] Xiang P H, Takeda H, Shiosaki T 2008 J. Appl. Phys. 103 064102
[15] Irvine J T S, Sinclair D C, West A R 1990 Adv. Mater. 2 132
[16] West A R, Sinclair D C, Hirose N 1997 J. Electroceram. 11 65
[17] Hari N S, Padmini P, Kutty T R N 1997 J. Mater. Sci. Mater. Electron. 8 15
[18] Yuan C L, Liu X Y, Zhou C R, Xu J W, Yang Y 2011 Chin. Phys. B 20 048701
[19] Heywang W 1971 J. Mater. Sci. 6 1214
[20] Haywang W 1961 Solid State Electron. 3 51
[21] Zhang P L, Zhong W L, Liu S D 1987 J. Chin. Ceram. Soc. 15 136 (in Chinese) [张沛霖, 钟维烈, 刘斯栋 1987 硅酸盐学报 15 136]
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[1] Hayman P W, Dam R W 1955 German Patent 929350 [1955-06-23]
[2] Wang S H, Hwang F S, Tseng T Y 1990 J. Am. Ceram. Soc. 73 2767
[3] Kuwabara M, Suemura S, Kawahara M 1985 Am. Ceram. Soc. Bull. 64 1394
[4] Smolensky G A, Isupov V A, Agranovskaya A I, Krainik N N 1961 Sov. Phys. Solid State 2 2651
[5] Huo W R, Qu Y F 2006 Sens. Actuators A 128 265
[6] Takeda H, Shimada T, Katsuyama Y, Shiosaki T 2009 J. Electroceram. 22 263
[7] Takeda H, Aoto W, Shiosaki T 2005 Appl. Phys. Lett. 87 102104
[8] Leng S L, Li G R, Zheng L Y, Shi W, Zhu Y 2013 J. Mater. Sci.: Mater. Electron. 24 431
[9] Hirose N, West A R 1996 J. Am Ceram. Soc. 79 1633
[10] Sinclair D C, West A R 1989 J. Appl. Phys. 66 3850
[11] Yuan C L, Liu X Y, Huang J Y, Zhou C R, Xu J W 2011 Acta Phys. Sin. 60 025201 (in Chinese) [袁昌来, 刘心宇, 黄静月, 周昌荣, 许积文 2011 60 025201]
[12] Yuan C L, Liu X Y, Yang Yun, Xu J W, Gu Y 2010 Acta Phys. Sin. 59 7396 (in Chinese) [袁昌来, 刘心宇, 杨云, 许积文, 谷岩 2010 59 7396]
[13] Sinclair D C, West A R 1994 J. Mater. Sci. 29 6061
[14] Xiang P H, Takeda H, Shiosaki T 2008 J. Appl. Phys. 103 064102
[15] Irvine J T S, Sinclair D C, West A R 1990 Adv. Mater. 2 132
[16] West A R, Sinclair D C, Hirose N 1997 J. Electroceram. 11 65
[17] Hari N S, Padmini P, Kutty T R N 1997 J. Mater. Sci. Mater. Electron. 8 15
[18] Yuan C L, Liu X Y, Zhou C R, Xu J W, Yang Y 2011 Chin. Phys. B 20 048701
[19] Heywang W 1971 J. Mater. Sci. 6 1214
[20] Haywang W 1961 Solid State Electron. 3 51
[21] Zhang P L, Zhong W L, Liu S D 1987 J. Chin. Ceram. Soc. 15 136 (in Chinese) [张沛霖, 钟维烈, 刘斯栋 1987 硅酸盐学报 15 136]
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